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    Global shutter image sensors with light guide and light shield structures
    1.
    发明授权
    Global shutter image sensors with light guide and light shield structures 有权

    公开(公告)号：US10325947B2

    公开(公告)日：2019-06-18

    申请号：US14157492

    申请日：2014-01-16

    Applicant: Semiconductor Components Industries, LLC

    Inventor： Sergey Velichko ,  Gennadiy Agranov ,  Victor Lenchenkov

    IPC: H01L27/00 ,  H01L27/146 ,  H04N5/3745 ,  H04N5/232

    Abstract: An image sensor operable in global shutter mode may include an array of image pixels. Each image pixel may include a photodiode for detecting incoming light and a separate storage diode for temporarily storing charge. To maximize the efficiency of the image pixel array, image pixels may include light guide structures and light shield structures. The light guide structures may be used to funnel light away from the storage node and into the photodiode, while the light shield structures may be formed over storage nodes to block light from entering the storage nodes. The light guide structures may fill cone-shaped cavities in a dielectric layer, or the light guide structures may form sidewalls having a ring-shaped horizontal cross section. Metal interconnect structures in the dielectric layer may be arranged in concentric annular structures to form a near-field diffractive element that funnels light towards the appropriate photodiode.

    Image sensor pixels with overflow capabilities
    2.
    发明授权
    Image sensor pixels with overflow capabilities 有权

    公开(公告)号：US10110840B2

    公开(公告)日：2018-10-23

    申请号：US15333407

    申请日：2016-10-25

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Sergey Velichko

    IPC: H04N5/225 ,  H04N5/232 ,  H04N5/378 ,  H04N5/353 ,  H01L27/146 ,  H04N5/355 ,  H04N5/3745 ,  H04N5/359

    Abstract: An image sensor pixel may include multiple split photodiodes that are covered by a single microlens. The image sensor may include a charge overflow capacitor coupled to a pixel charge storage within the image sensor via a gain control transistor. The image sensor pixel may have phase detection capabilities in a first mode of operation enabled by comparing phase signals generated from the split photodiodes. The image sensor pixel also may generate and readout image signals simultaneously in both rolling shutter operations and global shutter operations in a second mode of operation. The image sensor pixel may also generate an image using a linear combination of at least two signals read out using the charge overflow capacitor and light flickering mitigation operations. The image may be a high dynamic range image that is generated from at least a low exposure signal and a high exposure signal.

    Imaging systems and methods for performing column-based image sensor pixel gain adjustments
    4.
    发明授权
    Imaging systems and methods for performing column-based image sensor pixel gain adjustments 有权

    公开(公告)号：US09628732B2

    公开(公告)日：2017-04-18

    申请号：US14460966

    申请日：2014-08-15

    Applicant: Semiconductor Components Industries, LLC

    Inventor： Sergey Velichko

    IPC: H04N5/369 ,  H04N5/355 ,  H04N5/3745 ,  H04N5/232

    CPC classification number: H04N5/369 ,  H04N5/232 ,  H04N5/3559 ,  H04N5/37452 ,  H04N5/37457

    Abstract: An imaging system may include an array of image pixels arranged in rows and columns that includes first and second pixels in two different columns and a common row. A first column readout circuit may control the first pixel to exhibit a first gain and a second column readout circuit may control the second pixel to exhibit a second gain. The first and second readout circuits may determine whether to adjust the gain of the first and second pixels based on image signals that are captured by the first and second pixels. For example, the first readout circuit may selectively activate a dual conversion gain transistor in the first pixel based on an image signal received from the first pixel and the second readout circuit may independently and selectively activate a dual conversion gain transistor in the second pixel based on an image signal received from the second pixel.

    Image sensors with reflective optical cavity pixels
    7.
    发明授权
    Image sensors with reflective optical cavity pixels 有权
    具有反射光腔像素的图像传感器

    公开(公告)号：US09373732B2

    公开(公告)日：2016-06-21

    申请号：US13746211

    申请日：2013-01-21

    Applicant: Semiconductor Components Industries, LLC

    Inventor： Sergey Velichko

    IPC: H01L27/00 ,  H01J3/14 ,  H01L31/0232 ,  H01L27/146 ,  H01L31/18

    CPC classification number: H01L31/02327 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/18

    Abstract: An image sensor may be provided having a pixel array that includes optical cavity image pixels. An optical cavity image pixel may include a photosensitive element in a substrate and a reflective cavity formed from a frontside reflector that is embedded in an intermetal dielectric stack, a backside reflector formed in a dielectric layer above the photosensor that partially covers the photosensor, and sidewall reflectors formed in the substrate between adjacent photosensors using deep trench isolation techniques. Each optical cavity image pixel may also include a light-guide trench above the photosensor that guides light into the reflective cavity for that pixel. Each optical cavity pixel may also include color filter material in the trench. Light that is guided into the reflective cavity by the light-guide trench may experience multiple reflections from the reflectors of the reflective cavity before being absorbed and detected by the photosensor.

    Abstract translation: 可以提供具有包括光腔图像像素的像素阵列的图像传感器。 光腔图像像素可以包括衬底中的感光元件和由嵌入在金属间电介质堆叠中的前侧反射器形成的反射腔，形成在部分地覆盖光传感器的光电传感器上方的电介质层中的背面反射器，以及侧壁 使用深沟槽隔离技术在相邻光电传感器之间形成在衬底中的反射器。 每个光腔图像像素还可以包括光传感器上方的光导沟槽，其将光引导到该像素的反射腔中。 每个光腔像素还可以包括沟槽中的滤色器材料。 由光导槽引导到反射腔中的光可以在被光电传感器吸收和检测之前经历来自反射腔的反射器的多次反射。

    Imaging systems with backside illuminated near infrared imaging pixels
    8.
    发明授权
    Imaging systems with backside illuminated near infrared imaging pixels 有权
    具有背面照明的近红外成像像素的成像系统

    公开(公告)号：US09105546B2

    公开(公告)日：2015-08-11

    申请号：US13954844

    申请日：2013-07-30

    Applicant: Semiconductor Components Industries, LLC

    Inventor： Sergey Velichko ,  Gennadiy Agranov

    IPC: H01L31/0232 ,  H01L27/146

    CPC classification number: H01L27/1464 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14683 ,  H01L27/14689

    Abstract: An imaging system may include an image sensor having backside illuminated near infrared image sensor pixels. Each pixel may be formed in a graded epitaxial substrate layer such as a graded n-type epitaxial layer. Each pixel may be separated from an adjacent pixel by an isolation trench formed in the graded epitaxial layer. The isolation trench may be a continuous isolation trench or may be formed from a combined front side isolation trench and backside isolation trench that are separated by a wall structure. A buried front side reflector may be provided that reflects light such as infrared light that has passed through a pixel back into the pixel, thereby effectively doubling the silicon absorption depth of the pixels.

    Abstract translation: 成像系统可以包括具有背面照射的近红外图像传感器像素的图像传感器。 每个像素可以形成在渐变的外延衬底层中，例如渐变的n型外延层。 每个像素可以通过形成在渐变外延层中的隔离沟槽与相邻像素分离。 隔离沟槽可以是连续的隔离沟槽，或者可以由由壁结构隔开的组合的前侧隔离沟槽和背侧隔离沟槽形成。 可以提供将已经通过像素的红外光等的光反射回像素的掩埋的前侧反射器，从而有效地使像素的硅吸收深度加倍。

    Image sensors having multi-storage image sensor pixels
    10.
    发明授权
    Image sensors having multi-storage image sensor pixels 有权

    公开(公告)号：US10567689B2

    公开(公告)日：2020-02-18

    申请号：US15974452

    申请日：2018-05-08

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Sergey Velichko

    IPC: H04N5/225 ,  H04N5/3745 ,  H01L27/146 ,  H01L25/16 ,  H04N5/374

    Abstract: An image sensor pixel may include a photodiode, one or more storage diodes, one or more potential barrier structures, one or more capacitors, and a floating diffusion region. The photodiode may be coupled to a storage diode and a first capacitor, and a first potential barrier structure may be interposed between the storage diode and the first capacitor. The photodiode may also be coupled to additional storage diodes and additional capacitors in a similar manner. Additionally, the photodiode may be directly separated from a given capacitor via a corresponding potential barrier structure. Each capacitor may store overflow charge from one or more storage diodes and/or the photodiode and may be connected to the floating diffusion via respective transistors.

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