A method for pulling silicon single crystal includes a process of placing a molded body between a susceptor's inner surface and a crucible's outer surface. The molded body is formed based on three-dimensional data of the inner surface shape of the susceptor which can hold the vitreous silica crucible and three-dimensional data of the crucible so as to make the susceptor's central axis and the crucible's central axis substantially aligned when it is placed between the susceptor's inner surface and the crucible's outer surface.