Invention Grant
- Patent Title: Timing/power risk optimized selective voltage binning using non-linear voltage slope
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Application No.: US15083692Application Date: 2016-03-29
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Publication No.: US09865486B2Publication Date: 2018-01-09
- Inventor: Igor Arsovski , Jeanne P. Bickford , Mark W. Kuemerle , Susan K. Lichtensteiger , Jeanne H. Raymond
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Gibb & Riley, LLC
- Agent David A. Cain, Esq.
- Main IPC: G01R31/26
- IPC: G01R31/26 ; H01L21/66 ; H01L21/67 ; G06F17/50 ; G01R31/28

Abstract:
Systems and methods for optimizing timing/power risk SVB using a customer-supplied, non-linear voltage slope. Chips are manufactured according to an integrated circuit design. The minimum operating voltage and hardware variations for each device in the design is determined and a process distribution for the chips is divided into process windows. Vmax and Vmin to support system frequency are determined for each process window. Vmin vs. process-bin mean and sigma sensitivity is calculated using information about specific devices. The voltage for each process window that generates Vmin for specific devices is identified. Power at the slow end and fast end of each process window is evaluated using the voltage to support system frequency. Pmax is determined. Vmax for each process window that generates Pmax is determined. A voltage is identified between Vmin and Vmax that maximizes the timing margin for system frequency while minimizing risk for Pmax. The chips are sorted into different process windows, based on the voltage identified.
Public/Granted literature
- US20170287756A1 TIMING/POWER RISK OPTIMIZED SELECTIVE VOLTAGE BINNING USING NON-LINEAR VOLTAGE SLOPE Public/Granted day:2017-10-05
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