Invention Grant
- Patent Title: Backside illuminated (BSI) CMOS image sensor (CIS) with a resonant cavity and a method for manufacturing the BSI CIS
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Application No.: US15011573Application Date: 2016-01-31
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Publication No.: US09865640B2Publication Date: 2018-01-09
- Inventor: Amos Fenigstein , Assaf Lahav
- Applicant: Tower Semiconductor Ltd.
- Applicant Address: IL Migdal Haemeq
- Assignee: TOWER SEMICONDUCTOR LTD.
- Current Assignee: TOWER SEMICONDUCTOR LTD.
- Current Assignee Address: IL Migdal Haemeq
- Agency: Reches Patents
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/146
Abstract:
A backside illuminated semiconductor image sensor that includes a Fabry-Perot resonator tuned to absorb near infrared (NIR) radiation; wherein the Fabry-Perot resonator comprises a front reflector, a back reflector and an active Silicon layer between the front reflector and the back reflector.
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