Invention Grant
- Patent Title: Semiconductor chip device
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Application No.: US15292219Application Date: 2016-10-13
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Publication No.: US09875978B2Publication Date: 2018-01-23
- Inventor: Johann Gatterbauer , Bernhard Weidgans , Dietrich Bonart , Thomas Gross , Martina Debie
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Viering, Jentschura & Partner mbB
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L23/00

Abstract:
According to various embodiments, a method may include: forming a first layer on a surface using a first lift-off process; forming a second layer over the first layer using a second lift-off process; wherein the second lift-off process is configured such that the second layer covers at least one sidewall of the first layer at least partially.
Public/Granted literature
- US20170110423A1 SEMICONDUCTOR CHIP DEVICE Public/Granted day:2017-04-20
Information query
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