Invention Grant
- Patent Title: Selective nitride outgassing process for MEMS cavity pressure control
-
Application No.: US15182754Application Date: 2016-06-15
-
Publication No.: US09884758B2Publication Date: 2018-02-06
- Inventor: Shyh-Wei Cheng , Hsi-Cheng Hsu , Hsin-Yu Chen , Ji-Hong Chiang , Jui-Chun Weng , Wei-Ding Wu , Yu-Jui Wu , Ching-Hsiang Hu , Ming-Tsung Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; B81C1/00 ; B81B7/00

Abstract:
The present disclosure relates to a MEMS package having an outgassing element configured to adjust a pressure within a hermetically sealed cavity by inducing outgassing of into the cavity, and an associated method. In some embodiments, the method is performed by forming an outgassing element within a passivation layer over a CMOS substrate and forming an outgassing resistive layer to cover the outgassing element. The outgassing resistive layer is removed from over the outgassing element, and the MEMS substrate is bonded to a front side of the CMOS substrate to enclose a first MEMS device within a first cavity and a second MEMS device within a second cavity. After removing the outgassing resistive layer, the outgassing element releases a gas into the second cavity to increase a second pressure of the second cavity to be greater than a first pressure of the first cavity.
Public/Granted literature
- US20170203962A1 SELECTIVE NITRIDE OUTGASSING PROCESS FOR MEMS CAVITY PRESSURE CONTROL Public/Granted day:2017-07-20
Information query
IPC分类: