Invention Grant
- Patent Title: Oxide semiconductor thin film, thin film transistor, manufacturing method and device
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Application No.: US15123177Application Date: 2015-09-02
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Publication No.: US09917205B2Publication Date: 2018-03-13
- Inventor: Guangcai Yuan , Liangchen Yan , Xiaoguang Xu , Lei Wang , Junbiao Peng , Linfeng Lan
- Applicant: BOE TECHNOLOGY GROUP CO., LTD. , SOUTH CHINA UNIVERSITY OF TECHNOLOGY
- Applicant Address: CN Beijing CN Guangzhou, Guangdong
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.,SOUTH CHINA UNIVERSITY OF TECHNOLOGY
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.,SOUTH CHINA UNIVERSITY OF TECHNOLOGY
- Current Assignee Address: CN Beijing CN Guangzhou, Guangdong
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: CN201510220082 20150430
- International Application: PCT/CN2015/088853 WO 20150902
- International Announcement: WO2016/173170 WO 20161103
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/786 ; H01L21/34 ; H01L29/24 ; H01L27/12 ; H01L29/66
Abstract:
This disclosure discloses an oxide semiconductor thin film, a thin film transistor, a manufacturing method and a device, belonging to the field of flat panel display. The oxide semiconductor thin film is made of an oxide containing zirconium and indium. A method of manufacturing the oxide semiconductor thin film comprises preparing a target using the oxide containing zirconium and indium, and sputtering the target to obtain the oxide semiconductor thin film.
Public/Granted literature
- US20170077307A1 OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, MANUFACTURING METHOD AND DEVICE Public/Granted day:2017-03-16
Information query
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