Apparatus and method for detecting single flip-error in a complementary resistive memory
Abstract:
Described is an apparatus which comprises: a complementary resistive memory bit-cell; a first sense amplifier coupled to the complementary resistive memory bit-cell via access devices; a second sense amplifier coupled to the first sense amplifier and to the complementary resistive memory bit-cell via the access devices, wherein the second sense amplifier is operable to detect an error in the complementary resistive memory bit-cell.
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