Invention Grant
- Patent Title: Systems and methods of characterizing process-induced wafer shape for process control using CGS interferometry
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Application No.: US15362923Application Date: 2016-11-29
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Publication No.: US09935022B2Publication Date: 2018-04-03
- Inventor: David M. Owen
- Applicant: Ultratech, Inc.
- Applicant Address: US CA San Jose
- Assignee: Ultratech, Inc.
- Current Assignee: Ultratech, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Downs Rachlin Martin PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/66 ; H01L23/544 ; G01B9/02 ; G01B11/16 ; G01B11/24

Abstract:
Systems and methods of characterizing wafer shape using coherent gradient sensing (CGS) interferometry are disclosed. The method includes measuring at least 3×106 data points on a wafer surface using a CGS system to obtain a topography map of the wafer surface. The data are collected on a wafer for pre-processing and post-processing of the wafer, and the difference calculated to obtain a measurement of the effect of the process on wafer surface shape. The process steps for processing the same wafer or subsequent wafers are controlled based on measured process-induced change in the wafer surface shape in order to improve the quality of the wafer processing.
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