公开(公告)号：US10351950B2

公开(公告)日：2019-07-16

申请号：US15033071

申请日：2014-11-21

Applicant: Ultratech, Inc.

Inventor： Mark Sowa ,  Robert Kane ,  Michael Sershen

IPC: C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  C23C16/50 ,  C23C16/52

Abstract: An improved Plasma Enhanced Atomic Layer Deposition (PEALD) system and related operating methods are disclosed. A vacuum reaction chamber includes a vacuum system that separates a first outflow from the reaction chamber, comprising unreacted first precursor, from a second outflow from the reaction chamber, comprising second precursor and any reaction by products from the reaction of the second precursor with the coating surfaces. A trap, including trap material surfaces, is provided to remove first precursor from the first outflow when the first precursor reacts with the trap material surfaces. When the second precursor includes a plasma generated material, the second precursor is not passed through the trap. An alternate second precursor source injects a suitable second precursor into the trap to complete a material deposition layer onto the trap surfaces thereby preparing the trap material surfaces to react with the first precursor on the next material deposition cycle.

公开(公告)号：US10032883B2

公开(公告)日：2018-07-24

申请号：US15236430

申请日：2016-08-13

Applicant: Ultratech, Inc.

Inventor： Oleg Gluschenkov ,  Rajendran Krishnasamy ,  Kathryn T. Schonenberg

IPC: H01L21/336 ,  H01L29/66 ,  H01L29/08 ,  H01L29/737 ,  H01L21/225 ,  H01L21/265 ,  H01L21/324 ,  H01L29/10

CPC classification number: H01L29/66242 ,  H01L21/2253 ,  H01L21/26513 ,  H01L21/324 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/7378

Abstract: Disclosed is an improved semiconductor structure (e.g., a silicon germanium (SiGe) hetero-junction bipolar transistor) having a narrow essentially interstitial-free SIC pedestal with minimal overlap of the extrinsic base. Also, disclosed is a method of forming the transistor which uses laser annealing, as opposed to rapid thermal annealing, of the SIC pedestal to produce both a narrow SIC pedestal and an essentially interstitial-free collector. Thus, the resulting SiGe HBT transistor can be produced with narrower base and collector space-charge regions than can be achieved with conventional technology.

公开(公告)号：US10016843B2

公开(公告)日：2018-07-10

申请号：US15064634

申请日：2016-03-09

Applicant: Ultratech, Inc.

Inventor： Yun Wang

IPC: H01S3/00 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67 ,  B23K26/06 ,  B23K26/0622 ,  B23K26/00 ,  B23K26/073 ,  B23K26/082 ,  B23K26/352 ,  B23K26/066 ,  B23K101/40 ,  B23K103/00

CPC classification number: B23K26/0622 ,  B23K26/0006 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/066 ,  B23K26/0738 ,  B23K26/082 ,  B23K26/352 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/268 ,  H01L21/324 ,  H01S3/0071 ,  H01S3/0085

Abstract: Systems and methods for reducing pulsed laser beam profile non-uniformities for laser annealing are disclosed. The methods include directing an initial pulsed laser beam along an optical axis, and imparting to each light pulse a time-varying angular deflection relative to the optical axis. This forms a new laser beam wherein each light pulse is smeared out over an amount of spatial deflection δ sufficient to reduce the micro-scale intensity variations in the laser beam. The new laser beam is then used to form the line image, which has better intensity uniformity as compared using the initial laser beam to form the line image.

公开(公告)号：US20170159177A1

公开(公告)日：2017-06-08

申请号：US15385381

申请日：2016-12-20

Applicant: ULTRATECH, INC.

Inventor： Douwe J. Monsma ,  Jill S. Becker

IPC: C23C16/455 ,  C23C16/44

CPC classification number: C23C16/45525 ,  B01D53/0407 ,  B01D2258/0216 ,  C23C16/44 ,  C23C16/4412 ,  C23C16/45544

Abstract: Vapor deposition systems and methods associated with the same are provided. The systems may be designed to include features that can promote high quality deposition; simplify manufacture, modification and use; as well as, reduce the footprint of the system, amongst other advantages.

公开(公告)号：US20160306177A1

公开(公告)日：2016-10-20

申请号：US15191941

申请日：2016-06-24

Applicant: Ultratech, Inc.

Inventor： Serguei Anikitchev

IPC: G02B27/09 ,  G02B17/06 ,  H01L21/268 ,  B23K26/082 ,  H01L21/225 ,  B23K26/06 ,  B23K26/073 ,  B23K26/00 ,  G02B17/00 ,  H01L21/324

CPC classification number: G02B27/0927 ,  B23K26/0006 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/066 ,  B23K26/0738 ,  B23K26/082 ,  B23K26/0823 ,  B23K26/083 ,  B23K26/352 ,  B23K26/354 ,  B23K2101/40 ,  B23K2103/56 ,  G02B17/008 ,  G02B17/061 ,  G02B27/0983 ,  G02B27/0988 ,  H01L21/2253 ,  H01L21/268 ,  H01L21/322 ,  H01L21/324 ,  H01L21/428 ,  H01L21/477

Abstract: A line-forming optical system and method are disclosed that form a line image with high-efficiency. A method includes forming a laser beam having a first intensity profile with a Gaussian distribution in at least a first direction and passing at least 50% of the laser beam in the first direction to form a first transmitted light. The method also includes: focusing the first transmitted light at an intermediate image plane to define a second intensity profile having a central peak and first side peaks immediately adjacent the central peak; then truncating the second intensity profile within each of first side peaks to define a second transmitted light; and then forming the line image at an image plane from the second transmitted light.

公开(公告)号：US09411163B2

公开(公告)日：2016-08-09

申请号：US14744207

申请日：2015-06-19

Applicant: Ultratech, Inc.

Inventor： Serguei Anikitchev

IPC: G02B27/09 ,  B23K26/06 ,  H01L21/477 ,  B23K26/00 ,  H01L21/324 ,  H01L21/322 ,  G02B17/06 ,  H01L21/428 ,  B23K26/073 ,  B23K26/08

CPC classification number: G02B27/0927 ,  B23K26/0006 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/066 ,  B23K26/0738 ,  B23K26/082 ,  B23K26/0823 ,  B23K26/083 ,  B23K26/352 ,  B23K26/354 ,  B23K2101/40 ,  B23K2103/56 ,  G02B17/008 ,  G02B17/061 ,  G02B27/0983 ,  G02B27/0988 ,  H01L21/2253 ,  H01L21/268 ,  H01L21/322 ,  H01L21/324 ,  H01L21/428 ,  H01L21/477

Abstract: A line-forming optical system and method are disclosed that form a line image with high-efficiency. A method includes forming a laser beam having a first intensity profile with a Gaussian distribution in at least a first direction and passing at least 50% of the laser beam in the first direction to form a first transmitted light. The method also includes: focusing the first transmitted light at an intermediate image plane to define a second intensity profile having a central peak and first side peaks immediately adjacent the central peak; then truncating the second intensity profile within each of first side peaks to define a second transmitted light; and then forming the line image at an image plane from the second transmitted light.

Abstract translation: 公开了以高效率形成线图像的线形成光学系统和方法。 一种方法包括在至少第一方向上形成具有高斯分布的第一强度分布的激光束，并使激光束的至少50％沿第一方向通过以形成第一透射光。 该方法还包括：将第一透射光聚焦在中间像平面处，以限定具有中心峰的第二强度分布，并且紧邻中心峰的第一侧峰; 然后截断每个第一侧峰内的第二强度分布，以限定第二透射光; 然后从第二透射光在像平面处形成线图像。

公开(公告)号：US09343307B2

公开(公告)日：2016-05-17

申请号：US14497006

申请日：2014-09-25

Applicant: Ultratech, Inc.

Inventor： Serguei Anikitchev

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/268 ,  B23K26/06 ,  B23K26/073

CPC classification number: H01L21/02683 ,  B23K26/0608 ,  B23K26/0736 ,  H01L21/02532 ,  H01L21/268 ,  H01L21/324

Abstract: The disclosure is directed to laser spike annealing using fiber lasers. The method includes performing laser spike annealing of a surface of a wafer by: generating with a plurality of fiber laser systems respective CW output radiation beams that partially overlap at the wafer surface to form an elongate annealing image having a long axis and a length LA along the long axis; heating at least a region of the wafer to a pre-anneal temperature TPA; and scanning the elongate annealing image over the wafer surface and within the pre-heat region so that the annealing image has a dwell time tD in the range 30 ns≦tD≦10 ms and raises the wafer surface temperature to an annealing temperature TA.

公开(公告)号：US20160115596A1

公开(公告)日：2016-04-28

申请号：US14957273

申请日：2015-12-02

Applicant: Ultratech, Inc.

Inventor： Michael J. Sershen ,  Ganesh M. Sundaram ,  Roger R. Coutu ,  Jill Svenja Becker ,  Mark J. Dalberth

IPC: C23C16/455 ,  C23C16/44

CPC classification number: C23C16/45574 ,  C23C16/4412 ,  C23C16/453 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45557 ,  C23C16/4584 ,  C23C16/545

Abstract: An ALD coating method to provide a coating surface on a substrate is provided. The ALD coating method comprises: providing a deposition heading including a unit cell having a first precursor nozzle assembly and a second precursor nozzle assembly; emitting a first precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; emitting a second precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; removing moving the substrate under the deposition head such that the first precursor is directed onto a first area of the coating surface prior to the second precursor being directed onto the first area of the coating surface.

Abstract translation: 提供了一种在基板上提供涂层表面的ALD涂覆方法。 ALD涂覆方法包括：提供包括具有第一前体喷嘴组件和第二前体喷嘴组件的单元的沉积标题; 在大气条件下沿基本上垂直于涂层表面的方向将第一前体从第一前体喷嘴组件发射到室中; 在大气条件下沿基本上垂直于涂层表面的方向将第二前体从第一前体喷嘴组件发射到室中; 去除在沉积头下方移动衬底，使得第一前体在第二前体被引导到涂层表面的第一区域之前被引导到涂层表面的第一区域上。

公开(公告)号：US20150275363A1

公开(公告)日：2015-10-01

申请号：US14584034

申请日：2014-12-29

Applicant: Ultratech, Inc.

Inventor： Michael J. Sershen ,  Ganesh M. Sundaram ,  Roger R. Coutu ,  Jill Svenja Becker ,  Mark J. Dalberth

IPC: C23C16/455 ,  C23C16/453 ,  C23C16/458

CPC classification number: C23C16/45574 ,  C23C16/4412 ,  C23C16/453 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45557 ,  C23C16/4584 ,  C23C16/545

Abstract: An ALD coating method to provide a coating surface on a substrate is provided. The ALD coating method comprises: providing a deposition heading including a unit cell having a first precursor nozzle assembly and a second precursor nozzle assembly; emitting a first precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; emitting a second precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; removing moving the substrate under the deposition head such that the first precursor is directed onto a first area of the coating surface prior to the second precursor being directed onto the first area of the coating surface.

Abstract translation: 提供了一种在基板上提供涂层表面的ALD涂覆方法。 ALD涂覆方法包括：提供包括具有第一前体喷嘴组件和第二前体喷嘴组件的单元的沉积标题; 在大气条件下沿基本上垂直于涂层表面的方向将第一前体从第一前体喷嘴组件发射到室中; 在大气条件下沿基本上垂直于涂层表面的方向将第二前体从第一前体喷嘴组件发射到室中; 去除在沉积头下方移动衬底，使得第一前体在第二前体被引导到涂层表面的第一区域之前被引导到涂层表面的第一区域上。

公开(公告)号：US08830590B2

公开(公告)日：2014-09-09

申请号：US13897514

申请日：2013-05-20

Applicant: Ultratech, Inc.

Inventor： David G. Stites

IPC: G02B3/00 ,  G02B9/00 ,  G02B27/02 ,  G03B27/42 ,  G03B21/14

CPC classification number: G02B17/08 ,  G03F7/70225

Abstract: A unit magnification Wynn-Dyson lens for microlithography has an image field sized to accommodate between four and six die of dimensions 26 mm×36 mm. The lens has a positive lens group that consists of either three or four refractive lens elements, with one of the lens elements being most mirror-wise and having a prism-wise concave aspheric surface. Protective windows respectively reside between object and image planes and the corresponding prism faces. The lens is corrected for at least the i-line LED wavelength spectrum or similar LED-generated wavelengths.

Abstract translation: 用于微光刻的单位放大率Wynn-Dyson透镜具有尺寸适应尺寸为26mm×36mm的四至六个裸片的图像场。 透镜具有由三个或四个折射透镜元件组成的正透镜组，其中一个透镜元件是最镜像的并且具有棱镜形的凹非球面表面。 保护窗分别位于物体和图像平面之间以及相应的棱镜面。 至少对i线LED波长光谱或类似的LED产生的波长进行校正。