Invention Grant
- Patent Title: Wafer structure, fabrication method, and spray apparatus
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Application No.: US15242559Application Date: 2016-08-21
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Publication No.: US09935059B2Publication Date: 2018-04-03
- Inventor: Jingfeng Gai
- Applicant: Semiconductor Manufacturing International (Beijing) Corporation , Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Beijing CN Shanghai
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN Beijing CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201510547844 20150831
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L23/00 ; H01L21/687 ; B05B12/08

Abstract:
A wafer structure and a method for fabricating the wafer structure, and a spray apparatus are provided. An exemplary method for forming the wafer structure includes providing a wafer having a central region and a peripheral region surrounding the central region; forming an interlayer dielectric layer on a surface of the wafer in the central region not in the peripheral region; forming a buffer layer on the surface of the wafer in the peripheral region not in the central region; and forming a glue layer on the interlayer dielectric layer and the buffer layer. The buffer layer is used to reduce the lattice mismatch between the wafer and the glue layer; and reduce the stress between the wafer and the glue layer.
Public/Granted literature
- US20170062359A1 WAFER STRUCTURE, FABRICATION METHOD, AND SPRAY APPARATUS Public/Granted day:2017-03-02
Information query
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