Invention Grant
- Patent Title: Getter electrode to improve vacuum level in a microelectromechanical systems (MEMS) device
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Application No.: US15205619Application Date: 2016-07-08
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Publication No.: US09938134B2Publication Date: 2018-04-10
- Inventor: Shiang-Chi Lin , Jung-Huei Peng , Yu-Chia Liu , Yi-Chien Wu , Wei Siang Tan
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81C1/00 ; B81B3/00 ; H01L23/02 ; H01L21/54 ; H01L21/322 ; H01L23/26 ; H01L29/84 ; H01L21/50
Abstract:
A microelectromechanical systems (MEMS) package with high gettering efficiency is provided. A MEMS device is arranged over a logic chip, within a cavity that is hermetically sealed. A sensing electrode is arranged within the cavity, between the MEMS device and the logic chip. The sensing electrode is electrically coupled to the logic chip and is a conductive getter material configured to remove gas molecules from the cavity. A method for manufacturing the MEMS package is also provided.
Public/Granted literature
- US20170297904A1 GETTER ELECTRODE TO IMPROVE VACUUM LEVEL IN A MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICE Public/Granted day:2017-10-19
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