公开(公告)号：US20170297904A1

公开(公告)日：2017-10-19

申请号：US15205619

申请日：2016-07-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shiang-Chi Lin ,  Jung-Huei Peng ,  Yu-Chia Liu ,  Yi-Chien Wu

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0038 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/04 ,  B81B2207/012 ,  B81B2207/07 ,  B81C1/00285 ,  B81C2201/013 ,  B81C2201/016 ,  B81C2203/0109 ,  B81C2203/035 ,  B81C2203/0714 ,  B81C2203/0792

Abstract: A microelectromechanical systems (MEMS) package with high gettering efficiency is provided. A MEMS device is arranged over a logic chip, within a cavity that is hermetically sealed. A sensing electrode is arranged within the cavity, between the MEMS device and the logic chip. The sensing electrode is electrically coupled to the logic chip and is a conductive getter material configured to remove gas molecules from the cavity. A method for manufacturing the MEMS package is also provided.

公开(公告)号：US09938134B2

公开(公告)日：2018-04-10

申请号：US15205619

申请日：2016-07-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shiang-Chi Lin ,  Jung-Huei Peng ,  Yu-Chia Liu ,  Yi-Chien Wu ,  Wei Siang Tan

IPC: B81B7/00 ,  B81C1/00 ,  B81B3/00 ,  H01L23/02 ,  H01L21/54 ,  H01L21/322 ,  H01L23/26 ,  H01L29/84 ,  H01L21/50

CPC classification number: B81B7/0038 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/04 ,  B81B2207/012 ,  B81B2207/07 ,  B81C1/00285 ,  B81C2201/013 ,  B81C2201/016 ,  B81C2203/0109 ,  B81C2203/035 ,  B81C2203/0714 ,  B81C2203/0792

Abstract: A microelectromechanical systems (MEMS) package with high gettering efficiency is provided. A MEMS device is arranged over a logic chip, within a cavity that is hermetically sealed. A sensing electrode is arranged within the cavity, between the MEMS device and the logic chip. The sensing electrode is electrically coupled to the logic chip and is a conductive getter material configured to remove gas molecules from the cavity. A method for manufacturing the MEMS package is also provided.

公开(公告)号：US09459224B1

公开(公告)日：2016-10-04

申请号：US14788352

申请日：2015-06-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Wen Cheng ,  Chia-Hua Chu ,  Fei-Lung Lai ,  Shiang-Chi Lin

IPC: H01L27/14 ,  G01N27/16 ,  H01L49/02 ,  H01L21/768 ,  H01L23/31

CPC classification number: H01L23/3121 ,  G01N27/128 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/481 ,  H01L28/60

Abstract: A gas sensor includes a substrate, a heater, a dielectric layer, a sensing electrode, and a gas sensitive film. The substrate has a sensing region and a peripheral region surrounding the sensing region, and the substrate further has an opening disposed in the sensing region. The heater is disposed at least above the opening, and the heater has an electrical resistivity larger than about 6×10−8 ohm-m. The dielectric layer is disposed on the heater. The sensing electrode is disposed on the dielectric layer. The gas sensitive film is disposed on the sensing electrode.

Abstract translation: 气体传感器包括基板，加热器，电介质层，感测电极和气体敏感膜。 衬底具有感测区域和围绕感测区域的周边区域，并且衬底还具有设置在感测区域中的开口。 加热器设置在开口的至少上方，并且加热器的电阻率大于约6×10-8欧姆 - 米。 电介质层设置在加热器上。 感测电极设置在电介质层上。 气体敏感膜设置在感测电极上。