Invention Grant
- Patent Title: III-V fin on insulator
-
Application No.: US15292983Application Date: 2016-10-13
-
Publication No.: US09954106B2Publication Date: 2018-04-24
- Inventor: Kangguo Cheng , Hemanth Jagannathan , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Daniel P. Morris, Esq.
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/78 ; H01L29/66 ; H01L29/201 ; H01L29/06 ; H01L27/088 ; H01L29/205 ; H01L21/306 ; H01L21/308
Abstract:
A method of forming a semiconductor structure in which a III-V compound semiconductor channel fin portion is formed on a dielectric material is provided. The method includes forming a III-V material stack on a surface of a bulk semiconductor substrate. Patterning of the III-V material stack is then employed to provide a pre-fin structure that is located between, and in contact with, pre-pad structures. The pre-pad structures are used as an anchoring agent when a III-V compound semiconductor channel layer portion of the III-V material stack and of the pre-fin structure is suspended by removing a topmost III-V compound semiconductor buffer layer portion of the material stack from the pre-fin structure. A dielectric material is then formed within the gap provided by the suspending step and thereafter a fin cut process is employed.
Public/Granted literature
- US20170084732A1 III-V FIN ON INSULATOR Public/Granted day:2017-03-23
Information query
IPC分类:
