A method of repairing a semiconductor processing component is provided, in which the method includes preparing a semiconductor processing component including a tantalum carbide (TaC) coating layer on which a silicon carbide (SiC)-deposited layer is formed, and performing a thermal process on the semiconductor processing component at a temperature of 1,700° C. to 2,700° C. under a gaseous condition using at least one gas selected from the group consisting of a gas including hydrogen, a gas including chlorine, and an inert gas, or under a vacuum condition.