Invention Grant
- Patent Title: Single-photon avalanche diode and an array thereof
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Application No.: US14781333Application Date: 2014-06-20
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Publication No.: US09960295B2Publication Date: 2018-05-01
- Inventor: Stuart McLeod , Pascal Mellot , Lindsay Grant
- Applicant: STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED , STMICROELECTRONICS (GRENOBLE 2) SAS
- Applicant Address: FR Grenoble GB Buckinghamshire
- Assignee: STMICROELECTRONICS (GRENOBLE 2) SAS,STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED
- Current Assignee: STMICROELECTRONICS (GRENOBLE 2) SAS,STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED
- Current Assignee Address: FR Grenoble GB Buckinghamshire
- Agency: Slater Matsil, LLP
- Priority: GB1311055.6 20130621
- International Application: PCT/GB2014/051895 WO 20140620
- International Announcement: WO2014/202995 WO 20141224
- Main IPC: H01J40/14
- IPC: H01J40/14 ; H01L31/0232 ; H01L27/146 ; G01T1/24 ; H01L31/02 ; H01L31/0216 ; H01L31/107 ; G01J1/42 ; G01J1/44 ; H01L27/144 ; H01L31/18 ; H01L27/148
Abstract:
A Single-Photon Avalanche Diode (SPAD) is disclosed. The SPAD may include an active region for detection of incident radiation, and a cover configured to shield part of the active region from the incident radiation. An array is also disclosed and includes SPADs arranged in rows and columns. A method for making the SPAD is also disclosed.
Public/Granted literature
- US20160056185A1 SINGLE-PHOTON AVALANCHE DIODE AND AN ARRAY THEREOF Public/Granted day:2016-02-25
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