Invention Grant
- Patent Title: Quantum dot light emitting device and manufacturing method thereof, liquid crystal display device
-
Application No.: US15039427Application Date: 2016-05-11
-
Publication No.: US09960378B2Publication Date: 2018-05-01
- Inventor: Chao Xu
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
- Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
- Current Assignee Address: CN Shenzhen, Guangdong
- Agent Andrew C. Cheng
- Priority: CN201610050077 20160125
- International Application: PCT/CN2016/081679 WO 20160511
- International Announcement: WO2017/128551 WO 20170803
- Main IPC: H01L51/50
- IPC: H01L51/50 ; H01L51/52 ; H01L51/00 ; H01L51/56 ; H01L27/32 ; G02F1/1335

Abstract:
The invention provides a quantum dot light emitting device and a manufacturing method thereof and further a liquid crystal display device. The quantum dot light emitting device includes an anode and a cathode disposed opposite to and spaced from each other, and further a hole injection layer, a first hole transport layer, a first quantum dot light emitting layer, a charge generation layer, a second quantum dot light emitting layer, a first electron transport layer and an electron injection layer sequentially stacked between the anode and the cathode in that order. The charge generation layer includes sequentially-disposed a second electron transport layer, a carrier generation layer and a second hole transport layer in that order. The first quantum dot light emitting layer emits a first light, the second quantum dot light emitting layer emits a second light, and the second electron transport layer includes a water/alcohol-soluble polymer.
Public/Granted literature
- US20180062100A1 QUANTUM DOT LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF, LIQUID CRYSTAL DISPLAY DEVICE Public/Granted day:2018-03-01
Information query
IPC分类: