Invention Grant
- Patent Title: Nanopillar field-effect and junction transistors with functionalized gate and base electrodes
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Application No.: US14720473Application Date: 2015-05-22
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Publication No.: US09966443B2Publication Date: 2018-05-08
- Inventor: Aditya Rajagopal , Chieh-feng Chang , Oliver Plettenburg , Stefan Petry , Axel Scherer , Charles L. Tschirhart
- Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY , SANOFI
- Applicant Address: US CA Pasadena FR Paris
- Assignee: California Institute of Technology,SANOFI
- Current Assignee: California Institute of Technology,SANOFI
- Current Assignee Address: US CA Pasadena FR Paris
- Agency: Steinfl + Bruno LLP
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/41 ; H01L29/73 ; H01L29/78 ; B82Y15/00 ; H01L29/732 ; H01L29/06 ; G01N27/414 ; H01L29/45 ; H01L29/49 ; H01L29/735
Abstract:
Systems and methods for molecular sensing are described. Molecular sensors are described which are based on field-effect or bipolar junction transistors. These transistors have a nanopillar with a functionalized layer contacted to either the base or the gate electrode. The functional layer can bind molecules, which causes an electrical signal in the sensor.
Public/Granted literature
- US20150279949A1 NANOPILLAR FIELD-EFFECT AND JUNCTION TRANSISTORS WITH FUNCTIONALIZED GATE AND BASE ELECTRODES Public/Granted day:2015-10-01
Information query
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