Invention Grant
- Patent Title: Semiconductor device having reverse U-shaped epitaxial layer and method for fabricating the same
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Application No.: US15214429Application Date: 2016-07-19
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Publication No.: US09966468B2Publication Date: 2018-05-08
- Inventor: Tien-Chen Chan , Yi-Fan Li , Li-Wei Feng , Ming-Hua Chang , Yu-Shu Lin , Shu-Yen Chan
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201610490392 20160628
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/02 ; H01L29/06
Abstract:
A method for fabricating semiconductor device is disclosed. First, a fin-shaped structure is formed on a substrate, a first liner is formed on the substrate and the fin-shaped structure, a second liner is formed on the first liner, part of the second liner and part of the first liner are removed to expose a top surface of the fin-shaped structure, part of the first liner between the fin-shaped structure and the second liner is removed to form a recess, and an epitaxial layer is formed in the recess.
Public/Granted literature
- US20170373191A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2017-12-28
Information query
IPC分类:
