Invention Grant
- Patent Title: Light emitting heterostructure with partially relaxed semiconductor layer
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Application No.: US15096802Application Date: 2016-04-12
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Publication No.: US09966496B2Publication Date: 2018-05-08
- Inventor: Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
- Applicant: Sensor Electronic Technology, Inc.
- Applicant Address: US SC Columbia
- Assignee: Sensor Electronic Technology, Inc.
- Current Assignee: Sensor Electronic Technology, Inc.
- Current Assignee Address: US SC Columbia
- Agency: LaBatt, LLC
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/02 ; H01L33/12 ; H01L33/14 ; H01L33/30 ; H01S5/02 ; H01S5/323
Abstract:
A light emitting heterostructure including a partially relaxed semiconductor layer is provided. The partially relaxed semiconductor layer can be included as a sublayer of a contact semiconductor layer of the light emitting heterostructure. A dislocation blocking structure also can be included adjacent to the partially relaxed semiconductor layer.
Public/Granted literature
- US20160225941A1 Light Emitting Heterostructure with Partially Relaxed Semiconductor Layer Public/Granted day:2016-08-04
Information query
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