Invention Grant
- Patent Title: Resistive random access memory device and method for fabricating the same
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Application No.: US15634349Application Date: 2017-06-27
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Publication No.: US09966530B2Publication Date: 2018-05-08
- Inventor: Wen-Yueh Jang , Chia Hua Ho
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: WINBOND ELECTRONICS CORP.
- Current Assignee: WINBOND ELECTRONICS CORP.
- Current Assignee Address: TW Taichung
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW103132925A 20140924
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
A resistive random access memory device and a method for fabricating the same are presented. The resistive random access memory device includes a first electrode having a first dopant within. A second electrode is disposed on the first electrode. A resistive switching layer is disposed between the first electrode and the second electrode.
Public/Granted literature
- US20170294579A1 RESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2017-10-12
Information query
IPC分类:
