Invention Grant
- Patent Title: Image sensor with heating effect and related methods
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Application No.: US15230134Application Date: 2016-08-05
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Publication No.: US09972654B2Publication Date: 2018-05-15
- Inventor: Victor Lenchenkov , Hamid Soleimani
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: IPTechLaw
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
An image sensor including a semiconductor layer. A light absorber layer couples with the semiconductor layer at a pixel of the image sensor and absorbs incident light to substantially prevent the incident light from entering the semiconductor layer. The light absorber layer heats a depletion region of the semiconductor layer in response to absorbing the incident light, creating electron/hole pairs. The light absorber layer may include one or more narrow bandgap materials.
Public/Granted literature
- US20160351616A1 IMAGE SENSOR WITH HEATING EFFECT AND RELATED METHODS Public/Granted day:2016-12-01
Information query
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