Invention Grant
- Patent Title: Scanning electron microscope and sample observation method
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Application No.: US13387183Application Date: 2010-07-30
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Publication No.: US09991092B2Publication Date: 2018-06-05
- Inventor: Zhaohui Cheng , Hikaru Koyama , Yoshinobu Kimura , Hiroyuki Shinada , Osamu Komuro
- Applicant: Zhaohui Cheng , Hikaru Koyama , Yoshinobu Kimura , Hiroyuki Shinada , Osamu Komuro
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2009-184001 20090807; JP2009-241966 20091021
- International Application: PCT/JP2010/004843 WO 20100730
- International Announcement: WO2011/016208 WO 20110210
- Main IPC: G01N23/00
- IPC: G01N23/00 ; H01J37/28

Abstract:
A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning conditioHn according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided.
Public/Granted literature
- US20120153145A1 SCANNING ELECTRON MICROSCOPE AND SAMPLE OBSERVATION METHOD Public/Granted day:2012-06-21
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