Invention Grant
- Patent Title: Device with channel having varying carrier concentration
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Application No.: US15263701Application Date: 2016-09-13
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Publication No.: US09991372B2Publication Date: 2018-06-05
- Inventor: Grigory Simin , Michael Shur , Alexander Dobrinsky
- Applicant: Sensor Electronic Technology, Inc.
- Applicant Address: US SC Columbia
- Assignee: Sensor Electronic Technology, Inc.
- Current Assignee: Sensor Electronic Technology, Inc.
- Current Assignee Address: US SC Columbia
- Agency: LaBatt, LLC
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/778 ; H01L29/06 ; H01L29/10 ; H01L29/201 ; H01L29/20 ; H01L29/417 ; H01L29/423
Abstract:
A semiconductor device including a device channel with a gate-drain region having a carrier concentration that varies laterally along a direction from the gate contact to the drain contact is provided. Lateral variation of the carrier concentration can be implemented by laterally varying one or more attributes of one or more layers located in the gate-drain region of the device.
Public/Granted literature
- US20170077278A1 Device with Channel Having Varying Carrier Concentration Public/Granted day:2017-03-16
Information query
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