Invention Grant
- Patent Title: Semiconductor element drive apparatus
-
Application No.: US15333516Application Date: 2016-10-25
-
Publication No.: US09991797B2Publication Date: 2018-06-05
- Inventor: Masashi Akahane
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: Rabin & Berdo, P.C.
- Priority: JP2014-225902 20141106
- Main IPC: H02M3/158
- IPC: H02M3/158 ; H03K17/18 ; H03K7/06 ; H02M1/32 ; H02M1/08

Abstract:
A semiconductor element drive apparatus for driving first and second semiconductor elements connected to a half-bridge circuit at respectively an upper-level side and a lower-level side of the half-bridge circuit. The semiconductor element drive apparatus includes a high-side circuit and a low-side circuit for respectively driving the first and second semiconductor elements. The high-side circuit includes a voltage drop detection unit that detects an abnormal voltage drop of a voltage of a main power supply, a pulse generation circuit that generates a pulse signal, a frequency of which is decreased in response to the abnormal voltage drop detected by the voltage drop detection unit, and a level-down circuit that receives the pulse signal from the pulse generation circuit, generates an abnormality signal, and transmits the abnormality signal to the low-side circuit, to thereby notify the low-side circuit of the abnormal voltage drop in the high-side circuit.
Public/Granted literature
- US20170040896A1 SEMICONDUCTOR ELEMENT DRIVE APPARATUS Public/Granted day:2017-02-09
Information query
IPC分类: