Abstract:
A method or manufacturing an integrated circuit structure with a magnetoresistance component is provided. A substrate is provided. A circuit structure layer including a metal pad is formed on the substrate. A dielectric layer is formed on the circuit structure. A metal damascene structure is formed in the dielectric layer. An opening is formed in the dielectric layer so as to form a step-drop. A magnetoresistance material layer is formed on the dielectric layer after forming the metal damascene structure and the opening A photolithography process is applied to pattern the magnetoresistance material layer to form a magnetoresistance component electrically connected to the metal damascene structure.
Abstract:
A fabricating method of a magnetoresistance sensor is provided with cost effective and process flexibility features. Firstly, a substrate is provided. Then, at least one magnetoresistance structure and at least one bonding pad are formed over the substrate, wherein the bonding pad is electrically connected with the magnetoresistance structure. Then, a passivation layer is formed over the magnetoresistance structure and the bonding pad. Then, a magnetic shielding and concentrator structure is formed over the passivation layer at a location corresponding to the magnetoresistance structure. Finally, bonding pad openings is formed on the passivation layer by patterned polyimide, thereby exposing the bonding pad. After bonding pad was opened, the patterned polyimide can be removed or retained as an additional protection layer.
Abstract:
A method for reporting uplink control information and a wireless communication device using the same are disclosed. The wireless communication device supports multiple component carriers (CC), and the proposed method includes following steps. When a base station requests the wireless communication device to transmit aperiodic channel state information (CSI) report of one or more downlink CC to the base station, but the CSI of the downlink CCs may be invalid, following steps are executed on the downlink CC. Full payloads of channel quality indicator (CQI)/precoding matrix indicator (PMI) corresponding to a plurality of selectable RI values of the downlink CC are respectively calculated. Additionally, an RI value of the downlink CC is selected according to the full payloads of the CQI/PMI corresponding to the selectable RI values.
Abstract:
A pulse width modulating (PWM) circuit includes an activating module and a pulse generating module connected to the activating module. The activating module includes a current resource and a compensation unit. The current source generates an activating current, and the compensating unit detects the activating current and compensates the activating current if the activating current changes. The activating current is input to the pulse generating module to generate pulse voltages output by the pulse generating module.
Abstract:
A method and a device for detecting a synchronization signal with a high identification rate are provided, which are suitable for a wide-area Orthogonal Frequency Division Multiplexing (OFDM) system. The method and device can precisely detect information of a synchronization signal, without being interfered by transmission channels and noises in an external environment. Three sliding windows are used to obtaining a balance value as an offset value for the output signal of the method and the device. A peak position of the output signal is identified and then compensated for a delay caused by the length of one of the sliding windows. Such a position is an edge of the synchronization signal.
Abstract:
A method for a base station to transmit data, the data to be relayed by a relay station to user equipment, the method including: encoding, based on an identification of the relay station or an identification of the user equipment, control information that indicates resource allocation for the relay station; and transmitting the control information to the relay station.
Abstract:
A method for forming a phase change memory device is disclosed. A substrate with a bottom electrode thereon is provided. A heating electrode and a dielectric layer are formed on the bottom electrode, wherein the heating electrode is surrounded by the dielectric layer. The heating electrode is etched to form recess in the dielectric layer. A phase change material is deposited on the dielectric layer, filling into the recess. The phase change material is polished to remove a portion of the phase change material exceeding the surface of the dielectric layer and a phase change layer is formed confined in the recess of the dielectric layer. A top electrode is formed on the phase change layer and the dielectric layer.
Abstract:
Various methods for data transmission based on signal priority and channel reliability are provided. One example method includes encoding a number of bits into coded bits including systematic bits and respective associated parity bits, the bits being encoded for transmission via channels of a multi-channel communications system including a more reliable channel and a less reliable channel. The example method also includes allocating the systematic bits to bit locations within a first stream corresponding to the more reliable channel, allocating the systematic bits to bit locations having a higher signal priority within a second stream corresponding to the less reliable channel, and allocating the parity bits to bit locations within the second stream. Similar and related example methods and apparatuses for allocating the systematic and parity bits to the respective bit locations in both the more and less reliable channels are also provided.
Abstract:
Phase change memory devices and fabrication methods thereof. A phase change memory device comprises a stacked heating element with a conductive portion and a relatively high resistive portion, wherein the relatively high resistive portion includes a nitrogen-containing metal silicide part. The heating stacked element such as a highly resistive nitrogen-containing metal silicide (MSixNy) is formed by a self-aligned silicidizing and nitrifying process. Self-aligned silicidization can be achieved by nitrogen ion implantation or nitrogen-containing plasma treatment. The resistance of the heating element can be regulated by adjusting the content of nitrogen or degree of nitrification.
Abstract translation:相变存储器件及其制造方法。 相变存储器件包括具有导电部分和相对较高电阻部分的堆叠加热元件,其中相对较高的电阻部分包括含氮金属硅化物部分。 通过自对准的硅化和硝化工艺形成诸如高阻值含氮金属硅化物(MSi x N N y)的加热层叠元件。 自对准硅化可以通过氮离子注入或含氮等离子体处理来实现。 可以通过调节氮的含量或硝化程度来调节加热元件的电阻。
Abstract:
A method for reporting Hybrid Automatic Repeat Request Acknowledgement (HARQ-ACK) is provided. The method is applicable to a time-division duplex (TDD) wireless communication system and includes the following steps: receiving downlink information from a base station with multiple serving cells, calculating a report number of each serving cell, which is a number of subframes of the corresponding serving cell whose acknowledgements have to be reported, and providing report information to the base station in an uplink subframe of a serving cell specified by the base station. The multiple serving cells use multiple uplink-downlink configurations. The report number of at least one of the serving cells is determined according to a downlink association set of the uplink subframe of the serving cell specified by the base station. The report information includes the acknowledgements that have to be reported by each of the serving cells.