公开(公告)号：WO2011115197A9

公开(公告)日：2012-01-12

申请号：PCT/JP2011056352

申请日：2011-03-17

Applicant: NAT INST OF ADVANCED IND SCIEN ,  KIM JAEHO ,  ISHIHARA MASATOU ,  KOGA YOSHINORI ,  TSUGAWA KAZUO ,  HASEGAWA MASATAKA ,  IIJIMA SUMIO ,  YAMADA TAKATOSHI

Inventor： KIM JAEHO ,  ISHIHARA MASATOU ,  KOGA YOSHINORI ,  TSUGAWA KAZUO ,  HASEGAWA MASATAKA ,  IIJIMA SUMIO ,  YAMADA TAKATOSHI

IPC: C23C16/26 ,  C23C16/511 ,  C23C16/54 ,  H01B13/00

CPC classification number: C23C16/511 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/188 ,  C23C16/26 ,  C23C16/545 ,  H01B1/04

Abstract: The disclosed method for the formation of a transparent conductive carbon film solves the problems of high temperature processing and long processing times, which are issues in graphene film deposition by thermal CVD, and uses a crystalline carbon film formed at lower temperatures and in less time using a graphene film. The disclosed method is characterised in that: the substrate temperature is set to 500°C or less; the pressure is set to 50 Pa or less; and a transparent conductive carbon film is deposited on the substrate surface of a copper or aluminium thin film by a microwave surface-wave plasma CVD process under a gas atmosphere in which an oxidation inhibitor for inhibiting the oxidation of the substrate surface is added to a mixed gas comprising a carbon-containing gas and an inert gas as an additive gas.

Abstract translation: 所公开的形成透明导电碳膜的方法解决了通过热CVD在石墨烯膜沉积中存在的高温处理和长处理时间的问题，并且使用在较低温度和更短时间内形成的结晶碳膜，使用 石墨烯膜。 所公开的方法的特征在于：将基板温度设定为500℃以下; 压力设定为50Pa以下; 并且通过微波表面波等离子体CVD工艺在氧化气氛中在铜或铝薄膜的基板表面上沉积透明导电性碳膜，其中将用于抑制基板表面的氧化的氧化抑制剂加入到混合 包含含碳气体和作为添加气体的惰性气体的气体。

公开(公告)号：WO2007034931A1

公开(公告)日：2007-03-29

申请号：PCT/JP2006/318894

申请日：2006-09-19

Applicant: FUJIFILM Corporation ,  OHNO, Seiichi ,  HASEGAWA, Masataka

Inventor： OHNO, Seiichi ,  HASEGAWA, Masataka

IPC: B29C41/40 ,  B29C41/28 ,  B29L7/00

CPC classification number: B29C41/28

Abstract: A casting belt 86 is produced of stainless steel. On a casting surface 86a on which a dope 61 is cast, two points Pl and P2 arranged in the widthwise direction X of the casting belt 86 are determined, such that the length L between two points Pl and P2 may be 10 mm. When a depth between the top and the bottom of the surface is continuously measured along the line P1P2, a depth maximum DE is at most 40 micrometers. Thus even if the film production is made for a long time, it is prevented that austenite partially transforms to martensite. Therefore, the scratches and deformations extending in the length wise direction hardly occur.

Abstract translation: 铸造带86由不锈钢制成。 在浇铸涂料61的铸造表面86a上，确定在铸造带86的宽度方向X上排列的两个点P1和P2，使得两点P1和P2之间的长度L可以为10mm。 当沿P1P2线连续​​测量表面顶部和底部之间的深度时，深度最大值DE最大为40微米。 因此，即使长时间制造薄膜，也可以防止奥氏体部分转变成马氏体。 因此，在长度方向延伸的划痕和变形几乎不发生。

公开(公告)号：JP2001035804A

公开(公告)日：2001-02-09

申请号：JP20685899

申请日：1999-07-21

Applicant: AGENCY IND SCIENCE TECHN ,  JAPAN SCIENCE & TECH CORP ,  HASEGAWA MASATAKA ,  OGURA MASAHIKO ,  TAKEUCHI DAISUKE ,  OGUSHI HIDEYO ,  KOBAYASHI NAOTO

Inventor： HASEGAWA MASATAKA ,  OGURA MASAHIKO ,  TAKEUCHI DAISUKE ,  YAMANAKA SADANORI ,  OGUSHI HIDEYO ,  KOBAYASHI NAOTO

IPC: C23C16/27 ,  C30B29/04 ,  H01L21/04 ,  H01L21/265 ,  H01L29/16 ,  H01L33/34

Abstract: PROBLEM TO BE SOLVED: To make controllable the electric conduction of a p-type and n-type, etc., of a thin-film diamond layer, by implanting the ions of impurity elements into the thin-film diamond layer having such a high quality that it emits ultraviolet rays at a room temperature by exciting it through the projection of an electron beam on it when specifying its thickness. SOLUTION: This diamond thin-film manufacturing apparatus 100 is an end-launch type microwave-CVD diamond synthesizing apparatus wherein a microwave is projected on a substrate 11 from the normal direction thereof. Further, the ions of impurity elements are implanted into a thin-film diamond layer formed on the substrate 11 which has such a high quality that it emits ultraviolet rays at a room temperature by exciting it through the projection of an electron beam on it when its thickness is made at least not larger than 200 nm, and its electric conduction is made controllable correspondingly to the impurity elements. Therefore, as its raw-material gas, the mixture gas comprising a methane gas of a carbon source and a hydrogen gas is used, and by exhausting the air of a reaction container 13 through a process pump during its synthetic process, the vacuous environment of the inside of the reaction container 13 is kept very clean to perform its plasma CVD on the substrate 11.