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公开(公告)号：JP2017519134A
公开(公告)日：2017-07-13
申请号：JP2017507049
申请日：2014-08-12
Applicant: 華南理工大学建築設計研究院Architectural Design & Research Institute Of South China University Of Technology , 華南理工大学建築設計研究院Architectural Design & Research Institute Of South China University Of Technology
Abstract: 構造免震防風適応の剛性可変免震層の剛性制御機構であって、上部構造に連結される上フランジプレート(1)と、底部のベース構造に連結される下フランジプレート(2)と、上フランジプレート(1)と下フランジプレート(2)との中空部の間に設置され、上フランジプレート(1)と下フランジプレート(2)との中空部の間を上下に移動可能であり、且つ高さが上フランジプレート(1)と下フランジプレート(2)との離間距離より大きいピンキー(3)と、を含む。当該免震層の剛性制御機構は、更に、ピンキー(3)が動かず、又は下へ移動するように制御する制御装置を含む。当該免震層の剛性制御機構は、免震層の剛性を自動的に変更可能であり、効果的に防風できるだけではなく、効果的に耐震できる。【選択図】図10
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公开(公告)号：JP2017514048A
公开(公告)日：2017-06-01
申请号：JP2017507050
申请日：2014-08-12
Applicant: 華南理工大学建築設計研究院Architectural Design & Research Institute Of South China University Of Technology , 華南理工大学建築設計研究院Architectural Design & Research Institute Of South China University Of Technology
Abstract: 重力負剛性を利用した剛性制御可能な免震サポートにおいて、上部構造に連結される上板(1)と、底部のベース構造に連結される下板(2)と、上板(1)と下板(2)の間に縦方向に設置されるK(K≧3)本の支柱(3)とを含む。支柱(3)は、上板(1)、下板(2)にそれぞれ球状ヒンジで連結される。支柱(3)の間にL(L≧N×K、N≧1)個の弾性連結板(5)が横方向に設置されている。当該サポートは、小さい水平剛性と良好な免震性能を有する。【選択図】図7
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公开(公告)号：JP6301550B2
公开(公告)日：2018-03-28
申请号：JP2017507049
申请日：2014-08-12
Applicant: 華南理工大学建築設計研究院 , ARCHITECTURAL DESIGN & RESEARCH INSTITUTE OF SOUTH CHINA UNIVERSITY OF TECHNOLOGY
Inventor： 舒 宣武
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公开(公告)号：JP2019504463A
公开(公告)日：2019-02-14
申请号：JP2017532605
申请日：2016-12-29
Applicant: 京東方科技集團股▲ふん▼有限公司 , BOE TECHNOLOGY GROUP CO.,LTD. , ▲華▼南理工大学 , SOUTH CHINA UNIVERSITY OF TECHNOLOGY
IPC: H01L29/786 , G02F1/1368 , G02F1/1343 , H01L21/336
Abstract: 本開示は、活性層、薄膜トランジスタ、アレイ基板及び表示装置、並びにそれらの製造方法を提供する。薄膜トランジスタ内の活性層を製造する方法は、直流(DC)スパッタリング処理により薄膜を形成する工程と、薄膜をエッチングして活性層を形成する工程とにより提供される。薄膜は、少なくとも約1×10 17 cm −3 のキャリア濃度と少なくとも約20cm 2 /Vsのキャリア移動度とを活性層に与えるように選択される材料からなる。
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公开(公告)号：JP6806682B2
公开(公告)日：2021-01-06
申请号：JP2017532605
申请日：2016-12-29
Applicant: 京東方科技集團股▲ふん▼有限公司 , BOE TECHNOLOGY GROUP CO.,LTD. , ▲華▼南理工大学 , SOUTH CHINA UNIVERSITY OF TECHNOLOGY
IPC: H01L29/786 , G02F1/1368 , G02F1/1343 , H01L21/336
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Patent Agency Ranking
公开(公告)号：US11637197B2
公开(公告)日：2023-04-25
申请号：US17253626
申请日：2019-09-16
Applicant: ZHONGSHAN INSTITUTE OF MODERN INDUSTRIAL TECHNOLOGY, SOUTH CHINA UNIVERSITY OF TECHNOLOGY , SOUTH CHINA UNIVERSITY OF TECHNOLOGY
Inventor： Hong Wang , Quanbin Zhou
IPC: H01L29/778 , H01L21/02 , H01L29/20 , H01L29/205 , H01L29/207
Abstract: An epitaxial structure of a GaN-based radio frequency device based on a Si substrate and a manufacturing method thereof are provided. The epitaxial structure is composed of a Si substrate (1), an AlN nucleation layer (2), AlGaN buffer layers (3, 4, 5), a GaN:Fe/GaN high-resistance layer (6), a GaN superlattice layer (7), a GaN channel layer (8), an AlGaN barrier layer (9) and a GaN cap layer (10) which are stacked in turn from bottom to top, wherein the GaN:Fe/GaN high-resistance layer (6) is composed of an intentional Fe-doped GaN layer and an unintentional doped GaN layer which are alternately connected; the GaN superlattice layer (7) is composed of a low-pressure/low V/III ratio GaN layer and a high-pressure/high V/III ratio GaN layer which are periodically and alternately connected.
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公开(公告)号：US20230079081A1
公开(公告)日：2023-03-16
申请号：US17986178
申请日：2022-11-14
Applicant: South China University of Technology , SOUTH CHINA UNIVERSITY OF TECHNOLOGY-ZHUHAI INSTITUTE OF MODERN INDUSTRIAL INNOVATION
Inventor： QIANG HUANG , Qing Gao , Bin Zhang , Xiong Fu
Abstract: Disclosed in the present invention are a starch-embedded aroma substance microcapsule and a preparation method therefor. The method comprises: performing degreasing treatment on starch, gelatinizing the starch at high temperature, sequentially adding aroma substances having different molecular sizes into the starch paste, and compounding at high temperature; and finally, cooling, centrifuging, washing, and drying to obtain an aroma substance microcapsule. The total embedding rate of the aroma substances in the obtained microcapsule can reach 46.64%. The present invention is simple and convenient in process, and easy in condition control, does not need large special equipment, and has low cost and high efficiency.
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公开(公告)号：US20220209065A1
公开(公告)日：2022-06-30
申请号：US17695873
申请日：2022-03-16
Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY , ZHONGSHAN INSTITUTE OF MODERN INDUSTRIAL TECHNOLOGY, SOUTH CHINA UNIVERSITY OF TECHNOLOGY
Inventor： Hong WANG , Lijun TAN , Ruohe YAO , Kai WANG , Zijing XIE
Abstract: The present invention discloses a micro-sized face-up LED device with a micro-hole array and preparation method thereof. The LED device is prepared based on a GaN-based epitaxial layer and includes a GaN-based epitaxial layer, a current spreading layer, a P electrode, an N electrode and a passivation layer; the GaN-based epitaxial layer including a substrate, an N-type CaN layer, i.e., an N-GaN layer, a multiple quantum well layer (MQW), and a P-type GaN layer, i.e., a P-GaN layer; and the N-GaN layer including an etched exposed N-GaN layer and an etched formed N-GaN layer. The present invention improves luminescence efficiency while ensuring the device modulation bandwidth; and after the micro-hole array is etched by ICP, a sample continues to be etched by using the current spreading layer etching liquid to prevent the leakage caused by the expansion of the current spreading layer in the etching process.
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公开(公告)号：US20210305460A1
公开(公告)日：2021-09-30
申请号：US17260564
申请日：2019-09-17
Applicant: ZHONGSHAN INSTITUTE OF MODERN INDUSTRIAL TECHNOLOGY, SOUTH CHINA UNIVERSITY OF TECHNOLOGY , SOUTH CHINA UNIVERSITY OF TECHNOLOGY
Inventor： Hong WANG , Rulian WEN , Xiaolong HU , Quanbin ZHOU
Abstract: A preparation method for a metal-doped gallium oxide transparent conductive thin film for ultraviolet waveband includes: growing a contact layer thin film (2) on a substrate (1) first, and annealing the grown contact layer thin film (2) in a nitrogen-oxygen atmosphere at 400° C. to 600° C. through a rapid thermal annealing furnace; growing a first Ga2O3 thin film (31) by sputtering through magnetron sputtering under argon conditions; growing a doped thin film (4) by sputtering through magnetron sputtering under argon conditions; growing a second Ga2O3 thin film (32) by sputtering through magnetron sputtering under argon conditions; and annealing the grown thin films in a nitrogen-oxygen atmosphere at 500° C. to 600° C. through a rapid thermal annealing furnace, so that permeation, diffusion and fusion occur between thin film materials to form a metal-doped Ga2O3 thin film (5). A metal-doped gallium oxide transparent conductive thin film for ultraviolet waveband is provided.
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公开(公告)号：US12224377B2
公开(公告)日：2025-02-11
申请号：US17695873
申请日：2022-03-16
Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY , ZHONGSHAN INSTITUTE OF MODERN INDUSTRIAL TECHNOLOGY, SOUTH CHINA UNIVERSITY OF TECHNOLOGY
Inventor： Hong Wang , Lijun Tan , Ruohe Yao , Kai Wang , Zijing Xie
Abstract: The present invention discloses a micro-sized face-up LED device with a micro-hole array and preparation method thereof. The LED device is prepared based on a GaN-based epitaxial layer and includes a GaN-based epitaxial layer, a current spreading layer, a P electrode, an N electrode and a passivation layer; the GaN-based epitaxial layer including a substrate, an N-type CaN layer, i.e., an N-GaN layer, a multiple quantum well layer (MQW), and a P-type GaN layer, i.e., a P-GaN layer; and the N-GaN layer including an etched exposed N-GaN layer and an etched formed N-GaN layer. The present invention improves luminescence efficiency while ensuring the device modulation bandwidth; and after the micro-hole array is etched by ICP, a sample continues to be etched by using the current spreading layer etching liquid to prevent the leakage caused by the expansion of the current spreading layer in the etching process.
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