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Patent Agency Ranking
公开(公告)号：KR1020160003454A
公开(公告)日：2016-01-11
申请号：KR1020140081862
申请日：2014-07-01
Applicant: 삼성전자주식회사
IPC: G01R31/327 , G01R31/26
CPC classification number: G11C17/18 , G11C17/16 , G11C29/027 , G11C2029/1206 , G11C2029/5006
Abstract: 이-퓨즈의프로그래밍전류측정이가능한이-퓨즈테스트장치를제공하는것이다. 상기이-퓨즈테스트장치는제1 트랜지스터, 및상기제1 트랜지스터의소오스/드레인단자와연결되는퓨즈어레이를포함하고, 상기퓨즈어레이는 N개의퓨즈그룹들을포함하고, 각각의상기퓨즈그룹들은일단과, 타단과, 상기일단및 타단사이에직렬로연결된 M개의제1 퓨즈요소들을포함하고, 각각의상기퓨즈그룹들의일단은서로연결되고, 각각의상기퓨즈그룹들의타단은상기제1 트랜지스터의소오스/드레인단자와연결되고, 상기 N과상기 M은각각 2 이상의자연수이다.
Abstract translation: 提供了一种能够测量电子熔丝的编程电流的电子熔丝测试装置。 电熔丝测试装置包括：第一晶体管和连接到第一晶体管的源极/漏极端子的熔丝阵列。 熔丝阵列包括N个保险丝组，每个保险丝组包括一端，另一端和M个第一熔丝元件在一端和另一端之间彼此串联连接，每个熔丝组的一端 彼此连接，并且每个熔丝组的另一端连接到第一晶体管的源极/漏极端子，其中N和M是等于或大于2的自然数。
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公开(公告)号：KR102201081B1
公开(公告)日：2021-01-11
申请号：KR1020140081862
申请日：2014-07-01
Applicant: 삼성전자주식회사
IPC: G01R31/327 , G01R31/26
Abstract: 이-퓨즈의프로그래밍전류측정이가능한이-퓨즈테스트장치를제공하는것이다. 상기이-퓨즈테스트장치는제1 트랜지스터, 및상기제1 트랜지스터의소오스/드레인단자와연결되는퓨즈어레이를포함하고, 상기퓨즈어레이는 N개의퓨즈그룹들을포함하고, 각각의상기퓨즈그룹들은일단과, 타단과, 상기일단및 타단사이에직렬로연결된 M개의제1 퓨즈요소들을포함하고, 각각의상기퓨즈그룹들의일단은서로연결되고, 각각의상기퓨즈그룹들의타단은상기제1 트랜지스터의소오스/드레인단자와연결되고, 상기 N과상기 M은각각 2 이상의자연수이다.
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公开(公告)号：KR101562985B1
公开(公告)日：2015-10-23
申请号：KR1020090015931
申请日：2009-02-25
Applicant: 삼성전자주식회사
CPC classification number: G11C7/1036 , G11C17/18
Abstract: 본발명에따른복수의퓨즈들을포함하는반도체장치는, 복수의퓨즈들; 상기복수의퓨즈들을프로그램하기위한복수의프로그램요소들; 그리고상기복수의프로그램요소들중에서적어도 2개를활성화할수 있는시프트레지스터를포함한다.
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公开(公告)号：KR1020100096861A
公开(公告)日：2010-09-02
申请号：KR1020090015931
申请日：2009-02-25
Applicant: 삼성전자주식회사
CPC classification number: G11C7/1036 , G11C17/18 , G11C16/34 , G11C29/04
Abstract: PURPOSE: A semiconductor device and a fuse program method thereof are provided to control the size and method of data which is simultaneously programmed by changing only a program vector. CONSTITUTION: A fuse read only memory(100) comprises a plurality of fuses(F0-F7) and a plurality of program elements(110) for programming the fusses. The fuse ROM includes a first shit resistor(120) and a second shift resistor(130). The fuses are programmed simultaneously by the first and second shit resistor. Only one fuse is programmed through one program operation.
Abstract translation: 目的：提供一种半导体器件及其熔丝编程方法来控制通过仅改变程序向量而同时编程的数据的大小和方法。 构成：保险丝只读存储器（100）包括多个保险丝（F0-F7）和多个编程元件（110），用于对故障进行编程。 熔丝ROM包括第一阻抗电阻器（120）和第二移位电阻器（130）。 保险丝由第一和第二狗屎电阻同时编程。 只有一个保险丝通过一个程序操作进行编程。
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公开(公告)号：KR100840685B1
公开(公告)日：2008-06-24
申请号：KR1020070008451
申请日：2007-01-26
Applicant: 삼성전자주식회사
CPC classification number: G11C8/08 , G06F13/4086 , G11C7/1078 , G11C7/1096 , G11C7/22 , G11C11/4076 , G11C11/4085 , H03K3/037 , H03K19/01714 , H03K2005/00058 , H04L25/0286 , Y02D10/14 , Y02D10/151
Abstract: A driver, a semiconductor memory device having the same, and a method of driving at least one load are provided to reduce distortion of a driving signal by boosting the driving signal on the basis of transition time of the driving signal. A driving unit(410) provides a driving signal to at least more than one load. A boosting unit(420) reduces distortion of the provided driving signal by boosting the provided driving signal on the basis of transition time of the provided driving signal. The boosting unit generates an inverted driving signal on the basis of the provided driving signal when transition of the provided driving signal is performed, and boosts the provided driving signal on the basis of delay time between the provided driving signal and the inverted driving signal.
Abstract translation: 提供驱动器，具有该驱动器的半导体存储器件和驱动至少一个负载的方法，以通过基于驱动信号的转换时间升高驱动信号来减少驱动信号的失真。 驱动单元（410）向至少一个负载提供驱动信号。 升压单元（420）通过基于所提供的驱动信号的转换时间来提升所提供的驱动信号来减小所提供的驱动信号的失真。 升压单元在所提供的驱动信号的转换被执行时，基于所提供的驱动信号产生反转的驱动信号，并且基于所提供的驱动信号和反相驱动信号之间的延迟时间来提升所提供的驱动信号。
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