Abstract:
PURPOSE: An electron resist, a manufacturing method thereof are provided to simplify a manufacturing process by using an electron beam resist with conductivity and transparency. CONSTITUTION: An electron beam resist includes an HSQ(hydrogen silsesquioxane) and a carbon nanotube. An electron beam resist layer(720) is formed on the patterned target. An electron beam resist pattern(725) is formed on the electron beam resist layer. The target is patterned by using the electron beam resist pattern.