公开(公告)号：KR1020120124702A

公开(公告)日：2012-11-14

申请号：KR1020110042515

申请日：2011-05-04

Applicant: 성균관대학교산학협력단

Inventor： 염근영 ,  배정운 ,  김태형

IPC: H01L33/20 ,  H01L33/22

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/12

Abstract: PURPOSE: A light emitting diode with an increased light emitting layer area and a manufacturing method thereof are provided to prevent the increase in contact resistance by improving the uniformity of doping a p-type clad layer. CONSTITUTION: An n-type clad layer(300) is laminated on a substrate(100). An active layer(500) is laminated on the n-type clad layer. A p-type clad layer(600) is laminated on the active layer. The upper part of the n-type clad layer includes a micro scale pattern. A first buffer layer(200) is laminated between the substrate and the n-type clad layer.

Abstract translation: 目的：提供具有增加的发光层面积的发光二极管及其制造方法，以通过改善p型覆盖层的掺杂均匀性来防止接触电阻的增加。 构成：在基板（100）上层叠n型覆盖层（300）。 在n型覆盖层上层叠有源层（500）。 在有源层上层叠p型覆盖层（600）。 n型覆盖层的上部包括微尺度图案。 第一缓冲层（200）层叠在基板和n型覆盖层之间。