발광층 영역이 증가된 발광 다이오드 및 이의 제조방법
    1.
    发明公开
    발광층 영역이 증가된 발광 다이오드 및 이의 제조방법 无效
    发光二极管具有增加的发射面积及其制造方法

    公开(公告)号:KR1020120124702A

    公开(公告)日:2012-11-14

    申请号:KR1020110042515

    申请日:2011-05-04

    CPC classification number: H01L33/22 H01L33/0079 H01L33/12

    Abstract: PURPOSE: A light emitting diode with an increased light emitting layer area and a manufacturing method thereof are provided to prevent the increase in contact resistance by improving the uniformity of doping a p-type clad layer. CONSTITUTION: An n-type clad layer(300) is laminated on a substrate(100). An active layer(500) is laminated on the n-type clad layer. A p-type clad layer(600) is laminated on the active layer. The upper part of the n-type clad layer includes a micro scale pattern. A first buffer layer(200) is laminated between the substrate and the n-type clad layer.

    Abstract translation: 目的:提供具有增加的发光层面积的发光二极管及其制造方法,以通过改善p型覆盖层的掺杂均匀性来防止接触电阻的增加。 构成:在基板(100)上层叠n型覆盖层(300)。 在n型覆盖层上层叠有源层(500)。 在有源层上层叠p型覆盖层(600)。 n型覆盖层的上部包括微尺度图案。 第一缓冲层(200)层叠在基板和n型覆盖层之间。

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