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公开(公告)号:KR100834115B1
公开(公告)日:2008-06-02
申请号:KR1020070024156
申请日:2007-03-12
Applicant: 재단법인서울대학교산학협력재단
CPC classification number: Y02E40/64
Abstract: An IBAD(Ion Beam Assisted Deposition) system for fabricating a metal wire having a biaxial-alignment property is provided to implement continuous deposition on a long metal substrate while stably transferring the metal substrate with a length of more than 100m without deformation. A system for fabricating a superconducting wire includes a reel to reel device(420), a heating member(500), a deposition member, and an ion injection member. The reel to reel device includes a first reel member(422a) and a second reel member(422b) for multi-turn of a metal wire(1) on a deposition region to deposit a biaxial-alignment thin film on the metal wire continuously. The heating member heats the metal wire multi-turned by the reel to reel device. The deposition member deposits material on the metal wire passing through the deposition region. The ion injection member irradiates ion beams to the thin film deposited on the metal wire. Each of the first and second reel member includes a shaft, a plurality of reels(424), and a second bearing.
Abstract translation: 提供用于制造具有双轴取向性的金属线的IBAD(离子束辅助沉积)系统,以在长的金属基板上实现连续沉积,同时稳定地转移长度大于100μm的金属基板而不变形。 一种用于制造超导线材的系统包括卷轴对卷装置(420),加热构件(500),沉积构件和离子注入构件。 卷盘到卷装置包括用于在沉积区域上多次旋转金属丝(1)的第一卷轴部件(422a)和第二卷轴部件(422b),以将金属丝上的双轴取向薄膜连续地沉积在金属丝上。 加热构件通过卷轴装置加热金属丝多转。 沉积构件将材料沉积在穿过沉积区域的金属线上。 离子注入构件将离子束照射到沉积在金属线上的薄膜。 第一和第二卷轴构件中的每一个包括轴,多个卷轴(424)和第二轴承。