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公开(公告)号：KR100834114B1
公开(公告)日：2008-06-02
申请号：KR1020070025553
申请日：2007-03-15
Applicant: 재단법인서울대학교산학협력재단
CPC classification number: Y02E40/64
Abstract: An IBAD(Ion Beam Assisted Deposition) system for fabricating a metal wire having a biaxial-alignment property is provided to control a deposition region of a metal substrate moving at high speed in continuous deposition on the long metal substrate. An IBAD system(10) for fabricating a superconducting wire includes a transfer unit(400), a heating member(500), a deposition member(100), an ion injection member(200), and a control member(700). The transfer unit includes a first reel member(422a) and a second reel member(422b) for multi-turn of a metal wire on a deposition region(42) to continuously deposit a biaxial-alignment thin film on the metal wire. The heating member heats the multi-turned metal wire. The deposition member deposits material on the metal wire passing through the deposition region. The ion injection member irradiates ion-beams to the thin film deposited on the metal wire. The control member controls the deposition region.
Abstract translation: 提供了用于制造具有双轴取向性的金属线的IBAD（离子束辅助沉积）系统，以控制在长金属基板上的连续沉积中高速移动的金属基板的沉积区域。 用于制造超导线材的IBAD系统（10）包括转印单元（400），加热构件（500），沉积构件（100），离子注入构件（200）和控制构件（700）。 转印单元包括用于在沉积区域（42）上多次旋转金属丝的第一卷轴构件（422a）和第二卷轴构件（422b），以在金属丝上连续沉积双轴取向薄膜。 加热构件加热多转金属线。 沉积构件将材料沉积在穿过沉积区域的金属线上。 离子注入构件将离子束照射到沉积在金属线上的薄膜。 控制构件控制沉积区域。
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公开(公告)号：KR100998310B1
公开(公告)日：2010-12-06
申请号：KR1020080019250
申请日：2008-02-29
Applicant: 재단법인서울대학교산학협력재단 , 주식회사 서남
Abstract: 본 발명은 유기금속증착용 전구용액 및 상기 전구용액을 사용하는 초전도 후막 형성방법에 관한 것이다. 희토류 원소를 포함하는 제 1 전구체, 구리를 포함하는 제 2 전구체 및 바륨을 포함하는 제 3 전구체를 산에 녹여 화합물 용액을 형성하고, 상기 화합물 용액을 용매에 녹여 예비 전구용액을 형성하고, 그리고 상기 예비 전구용액의 상기 용매를 증발시켜 점도가 증가된 전구용액을 형성한다. 이에 따라, 1회의 도포로도 충분히 두꺼운 후막을 균열 없이 형성할 수 있다.
유기금속증착, 전구용액, 초전도, 후막, 점도, 균열-
公开(公告)号：KR100834115B1
公开(公告)日：2008-06-02
申请号：KR1020070024156
申请日：2007-03-12
Applicant: 재단법인서울대학교산학협력재단
CPC classification number: Y02E40/64
Abstract: An IBAD(Ion Beam Assisted Deposition) system for fabricating a metal wire having a biaxial-alignment property is provided to implement continuous deposition on a long metal substrate while stably transferring the metal substrate with a length of more than 100m without deformation. A system for fabricating a superconducting wire includes a reel to reel device(420), a heating member(500), a deposition member, and an ion injection member. The reel to reel device includes a first reel member(422a) and a second reel member(422b) for multi-turn of a metal wire(1) on a deposition region to deposit a biaxial-alignment thin film on the metal wire continuously. The heating member heats the metal wire multi-turned by the reel to reel device. The deposition member deposits material on the metal wire passing through the deposition region. The ion injection member irradiates ion beams to the thin film deposited on the metal wire. Each of the first and second reel member includes a shaft, a plurality of reels(424), and a second bearing.
Abstract translation: 提供用于制造具有双轴取向性的金属线的IBAD（离子束辅助沉积）系统，以在长的金属基板上实现连续沉积，同时稳定地转移长度大于100μm的金属基板而不变形。 一种用于制造超导线材的系统包括卷轴对卷装置（420），加热构件（500），沉积构件和离子注入构件。 卷盘到卷装置包括用于在沉积区域上多次旋转金属丝（1）的第一卷轴部件（422a）和第二卷轴部件（422b），以将金属丝上的双轴取向薄膜连续地沉积在金属丝上。 加热构件通过卷轴装置加热金属丝多转。 沉积构件将材料沉积在穿过沉积区域的金属线上。 离子注入构件将离子束照射到沉积在金属线上的薄膜。 第一和第二卷轴构件中的每一个包括轴，多个卷轴（424）和第二轴承。
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公开(公告)号：KR1020090093618A
公开(公告)日：2009-09-02
申请号：KR1020080019250
申请日：2008-02-29
Applicant: 재단법인서울대학교산학협력재단 , 주식회사 서남
Abstract: A formation method of the precursor solution for the metal organic deposition and a super-conduction thick film forming method using the same are provided to manufacture a super-conduction thick film without the cracking by increasing the viscosity of the precursor solution. A super-conduction thick film forming method using the precursor solution for the metal organic deposition comprises followings. The compound solution is formed by melting the first precursor including one rare earth element without additive, the second precursor including barium and the third precursor including copper in acid(S1). The compound solution is melted in the solvent to form extra precursor solution(S3). The precursor solution with increased viscosity is formed by evaporating the solvent of the extra precursor solution(S4). The precursor solution with an increased viscosity is poured on a base material having texture in order to make the super-conduction thick film. At least one of the first, second or third precursor is molten with the acid not including fluorine. The super-conduction thick film forming process includes to coat the precursor solution with increased viscosity on the base material and to treat with the heat.
Abstract translation: 提供了用于金属有机沉积的前体溶液的形成方法和使用其的超导厚膜形成方法，以通过增加前体溶液的粘度来制造没有裂纹的超导厚膜。 使用前体溶液进行金属有机沉积的超导厚膜形成方法包括以下。 复合溶液是通过熔化含有一种稀土元素的第一前体而没有添加剂形成的，第二前体包括钡，第三前体在酸中包括铜（S1）。 将化合物溶液在溶剂中熔融以形成额外的前体溶液（S3）。 通过蒸发额外的前体溶液的溶剂（S4）形成粘度增加的前体溶液。 将具有增加的粘度的前体溶液倒入具有纹理的基材上以制备超导厚膜。 第一，第二或第三前体中的至少一种与不含氟的酸熔融。 超导厚膜形成方法包括在基材上涂覆增加粘度的前体溶液并用热处理。
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