公开(公告)号：KR1020070064186A

公开(公告)日：2007-06-20

申请号：KR1020050124834

申请日：2005-12-16

Applicant: 전자부품연구원

Inventor： 박재현 ,  김훈 ,  박광수 ,  정민재 ,  김상진 ,  신장규 ,  서상호

IPC: H01L27/146

CPC classification number: H01L27/1461 ,  H01L27/14612 ,  H04N5/361 ,  H04N5/3741

Abstract: A CMOS image sensor is provided to obtain an amplified photo current and reduce the time of chare storage. A CMOS image sensor is formed on a first conductive type semiconductor substrate. The CMOS image sensor includes a PMOSFET(P channel MOS Field Effect Transistor) and an output portion. The PMOSFET(210) includes a second conductive type well. The PMOSFET is used for receiving light and transforming the light into an electrical signal. The output portion is used for outputting the electric signal transmitted from the PMOSFET. A gate of the PMOSFET is electrically connected with the second conductive type well.

Abstract translation: 提供CMOS图像传感器以获得放大的光电流并减少chare存储的时间。 CMOS图像传感器形成在第一导电型半导体衬底上。 CMOS图像传感器包括PMOSFET（P沟道MOS场效应晶体管）和输出部分。 PMOSFET（210）包括第二导电型阱。 PMOSFET用于接收光并将光转换成电信号。 输出部分用于输出从PMOSFET传输的电信号。 PMOSFET的栅极与第二导电型阱电连接。