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公开(公告)号：KR101225949B1
公开(公告)日：2013-01-24
申请号：KR1020080109848
申请日：2008-11-06
Applicant: 제일모직주식회사
CPC classification number: C08L69/005 , C08L33/06 , C08L51/04 , C08L69/00 , C08L83/04 , C08L2666/02
Abstract: 본 발명은 열가소성 수지 조성물에 관한 것으로, 보다 상세하게는 (A) 폴리카보네이트계 수지 20 내지 93 중량%, (B) 변성 아크릴계 공중합 수지 3 내지 50 중량%, (C) 폴리디알킬-디아릴실록산 1 내지 10 중량%, 및 (D) 코어-쉘 그라프트 공중합체 3 내지 20 중량%를 포함하는 열가소성 수지 조성물에 관한 것이다.
본 발명에 따르면, 내스크래치 특성, 내충격성 및 투명성이 우수한 열가소성 수지 조성물을 제공하며, 이는 고착색성이 요구되는 전기전자 제품의 외장 부품, 자동차 정밀 부품 등의 다양한 성형품에 적용될 수 있다.
폴리카보네이트, 변성 아크릴계 공중합 수지, 폴리디알킬-디아릴실록산, 코어-쉘 그라프트 공중합체, 내스크래치, 내충격성, 착색성-
公开(公告)号：KR101178716B1
公开(公告)日：2012-08-31
申请号：KR1020080131167
申请日：2008-12-22
Applicant: 제일모직주식회사
IPC: C09K3/14
Abstract: 본 발명은 다결정 실리콘 연마용 CMP 슬러리 조성물 및 이의 제조 방법에 관한 것으로 보다 상세하게는 초순수, 연마제, 계면활성제, 및 pH 조절제를 포함하는 CMP 슬러리 조성물에 있어서, 상기 계면활성제로 음이온성 계면활성제 및 제미니형 계면활성제를 사용하는 것을 특징으로 하는 다결정 실리콘 연마용 CMP 슬러리 조성물에 관한 것이다.
본 발명의 CMP 슬러리 조성물은 다결정 실리콘에 대한 연마 속도가 우수하고, 연마 정지막인 산화막에 대비하여 다결정 실리콘에 대한 연마 선택비가 우수할 뿐만 아니라 연마 균일도가 우수하므로 다결정 실리콘 연마 공정에 유용하다.
다결정 실리콘, CMP, 슬러리, 음이온성 계면활성제, 제미니형 계면활성제, 연마 속도, 연마 선택비, 연마 균일도-
公开(公告)号：KR101178714B1
公开(公告)日：2012-08-31
申请号：KR1020080126563
申请日：2008-12-12
Applicant: 제일모직주식회사
IPC: C09K3/14
Abstract: 본 발명은 물; 연마입자; 피리딘계 화합물 및 벤조산계 화합물로 구성된 군에서 선택된 1종 이상의 물질; 및 폴리옥시프로필렌에테르 및 폴리옥시에틸렌옥시프로필렌공중합체로 구성된 군에서 선택된 1종 이상의 비이온성 화합물을 포함하는 CMP 슬러리를 제공한다.
본 발명에 따라, CMP 슬러리에 피리딘계 화합물 및/또는 벤조산계 화합물과 함께, 폴리옥시프로필렌에테르 및/또는 폴리옥시에틸렌옥시프로필렌 공중합체의 비이온성 화합물을 첨가하는 경우, 실리콘 산화막의 연마속도를 향상시키고, 실리콘 산화막과 실리콘 질화막 간의 연마 선택비를 높일 수 있으며, 불순물 제거를 위한 필터링 공정에서 필터 막힘 및 연마입자 고형분 손실 문제를 해결할 수 있다.
CMP 슬러리, 필터 막힘, 피리딘, 벤조산, 비이온성-
公开(公告)号：KR1020100072761A
公开(公告)日：2010-07-01
申请号：KR1020080131261
申请日：2008-12-22
Applicant: 제일모직주식회사
IPC: C09K3/14
Abstract: PURPOSE: A CMP slurry composition and a polishing method using thereof are provided to improve the polishing speed of poly-crystal silicon and to secure polishing selectivity for a polish-controlling oxide film. CONSTITUTION: A CMP slurry composition for polishing a poly-crystal silicon layer contains ultrapure water, an abrasive, a surfactant, and a pH modifier. The surfactant is either a non-ionic surfactant or a gemini type surfactant. The non-ionic surfactant is an ethylene oxide/propylene oxide copolymer marked with chemical formula 1: HO[(CH2CH2O)x(CH(CH3)CH2O)y]H. In chemical formula 1, x and y are natural numbers of 1~40.
Abstract translation: 目的：提供CMP浆料组合物及其使用的研磨方法，以提高多晶硅的抛光速度并确保抛光控制氧化膜的抛光选择性。 构成：用于抛光多晶硅层的CMP浆料组合物含有超纯水，研磨剂，表面活性剂和pH调节剂。 表面活性剂是非离子表面活性剂或双子型表面活性剂。 非离子表面活性剂是标记有化学式1：HO [（CH 2 CH 2 O）x（CH（CH 3）CH 2 O）y] H的环氧乙烷/环氧丙烷共聚物。 在化学式1中，x和y是1〜40的自然数。
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公开(公告)号：KR1020100050833A
公开(公告)日：2010-05-14
申请号：KR1020080109924
申请日：2008-11-06
Applicant: 제일모직주식회사
IPC: C09K3/14
Abstract: PURPOSE: A chemical mechanical polishing slurry composition for polishing an oxide film is provided to remove an initial stage during a pattern polishing, and to improve the surface property of the composition. CONSTITUTION: A chemical mechanical polishing slurry composition for polishing an oxide film contains ultra pure water, and a metal oxide. The composition uses more than two pyridine-based compounds as additives at the same time. The pH of the total composition is 5~6. The metal oxide is a cerium oxide with a primary particles size of 10~300 nano meters and a specific surface area of 10~300 square meters per gram. 0.5~10wt% of metal oxide is contained in the chemical mechanical polishing slurry composition. More than one pH modifier selected from the group consisting of hydrochloric acid, NaOH, potassium hydroxide, ammonia, nitric acid, sulfuric acid and phosphoric acid controls the pH of the composition.
Abstract translation: 目的：提供一种用于抛光氧化膜的化学机械抛光浆料组合物以去除图案研磨期间的初始阶段，并提高组合物的表面性能。 构成：用于抛光氧化膜的化学机械抛光浆料组合物含有超纯水和金属氧化物。 该组合物同时使用两种以上吡啶类化合物作为添加剂。 总组合物的pH为5〜6。 金属氧化物是一次粒径为10〜300纳米的氧化铈，比表面积为10〜300平方米/克。 在化学机械抛光浆料组合物中含有0.5〜10wt％的金属氧化物。 选自盐酸，NaOH，氢氧化钾，氨，硝酸，硫酸和磷酸的多种pH调节剂可控制组合物的pH值。
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Patent Agency Ranking
公开(公告)号：KR1020090073389A
公开(公告)日：2009-07-03
申请号：KR1020070141313
申请日：2007-12-31
Applicant: 제일모직주식회사
IPC: C09D133/08 , C09D133/00 , C09D5/16
CPC classification number: C09D5/1668 , C08F2/18 , C09D133/16
Abstract: A non-coating anti-fouling copolymer is provided to have no need for additional UV coating process, to prevent the degradation of mechanical property, and to ensure excellent water repellency, oil repellency and antifouling property. A non-coating anti-fouling copolymer with water resistance and oil resistance is formed by polymerizing a monomer mixture including perfluoroalkyl acrylate 30~60 parts by weight and (meth)acrylate 70~40 parts by weight. The perfluoroalkyl acrylate is a single compound represented by chemical formula 1: CH2=CX-COO-Y-(Rf)n-C(Z)3 or a mixture thereof. In chemical formula 1, X is hydrogen atom methyl group; Y is C2-10 aliphatic group or aromatic group; Rf is linear or branched fluoroalkyl group or alkenyl group; n is 4, 6, 7, 8, 9, 10, 11, 12 or 14; and Z is hydrogen or fluorine group.
Abstract translation: 提供非涂层防污共聚物，不需要额外的UV涂覆工艺，防止机械性能的降低，并且确保优异的防水性，拒油性和防污性。 通过使包含30〜60重量份的全氟烷基丙烯酸酯和（甲基）丙烯酸酯70〜40重量份的单体混合物聚合，形成具有耐水性和耐油性的非涂层防污共聚物。 全氟烷基丙烯酸酯是由化学式1表示的单一化合物：CH2 = CX-COO-Y-（Rf）n-C（Z）3或其混合物。 在化学式1中，X为氢原子甲基; Y为C2-10脂族基或芳基; Rf是直链或支链氟代烷基或烯基; n为4,6,7,8,9,10,11,12或14; Z为氢或氟基。
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公开(公告)号：KR1020080060140A
公开(公告)日：2008-07-01
申请号：KR1020070106076
申请日：2007-10-22
Applicant: 제일모직주식회사
IPC: C08F220/06 , C08F265/06 , C08F2/18
CPC classification number: C08F120/18 , C08F2/10 , C08F2/20 , C08F20/06 , C08F20/12 , C08F20/14 , C08F20/18 , C08F120/14 , C08F220/06
Abstract: A methacrylic resin composition obtained via suspension polymerization is provided to realize excellent discoloring resistance, light transmission and flowability while maintaining mechanical properties. A methacrylic resin composition obtained via suspension polymerization using polyacrylate-acrylic acid as a suspension stabilizer. The suspension stabilizer is used in an amount of about 0.05-0.25 parts by weight based on 100 parts by weight of a monomer mixture. The monomer mixture comprises 50-100 wt% of an alkyl methacrylate and about 0-50 wt% of a monomer copolymerizable therewith.
Abstract translation: 提供通过悬浮聚合获得的甲基丙烯酸树脂组合物，以在保持机械性能的同时实现优异的耐褪色性，透光性和流动性。 通过使用聚丙烯酸酯 - 丙烯酸作为悬浮稳定剂的悬浮聚合获得的甲基丙烯酸树脂组合物。 基于100重量份的单体混合物，悬浮稳定剂的用量为约0.05-0.25重量份。 单体混合物包含50-100重量％的甲基丙烯酸烷基酯和约0-50重量％的可与其共聚的单体。
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公开(公告)号：KR1020070011771A
公开(公告)日：2007-01-25
申请号：KR1020050066317
申请日：2005-07-21
Applicant: 제일모직주식회사
IPC: H01L21/304
Abstract: A CMP slurry composition is provided to increase the polishing rate of an insulation layer of a semiconductor wafer is provided to adjust hydrogen ion concentration by using hydroxide as an agent for adjusting hydrogen ion concentration, and to increase a polishing rate with respect to an oxide layer by adding salt. A CMP slurry composition includes deionized water, metal oxide powder, pH adjusting agent and ammonium salt. The metal oxide is at least one selected from a group of SiO2, Al2O3, CeO2, ZrO2 and TiO2. The pH adjusting agent is a hydroxide compound or organic amine, and the ammonium salt is selected from ammonium sulfate, ammonium nitrate, ammonium phosphate and ammonium carbonate.
Abstract translation: 提供CMP浆料组合物以提高半导体晶片的绝缘层的抛光速率，以通过使用氢氧化物作为调节氢离子浓度的试剂来调节氢离子浓度，并且提高相对于氧化物层的抛光速率 加盐。 CMP浆料组合物包括去离子水，金属氧化物粉末，pH调节剂和铵盐。 金属氧化物是选自SiO 2，Al 2 O 3，CeO 2，ZrO 2和TiO 2中的至少一种。 pH调节剂是氢氧化物或有机胺，铵盐选自硫酸铵，硝酸铵，磷酸铵，碳酸铵等。
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公开(公告)号：KR1020060120906A
公开(公告)日：2006-11-28
申请号：KR1020050043151
申请日：2005-05-23
Applicant: 제일모직주식회사
IPC: H01L21/304
CPC classification number: C09G1/02
Abstract: CMP slurry for polishing a poly-silicon film and a method for producing the same are provided to prevent a dishing effect, enhance polishing uniformity, and obtain proper selectivity. CMP slurry for polishing a poly-silicon film includes (a) a metal oxide of 0.1 to 30 weight percent, (b) a quaternary ammonium base compound of 0.05 to 5 weight percent, (c) a tertiary amine of 0.01 to 1 weight percent, and (d) a cationic polymer of 0.01 to 1 weight percent. The metal oxide includes one of SiO2, Al2O3, CeO2, and ZrO2. A size of a primary particle of the metal oxide corresponds to 10 to 70 nm. A non-surface area of the metal oxide corresponds to 50 to 300 m^2/g.
Abstract translation: 提供了用于抛光多晶硅膜的CMP浆料及其制造方法，以防止凹陷效应，增强抛光均匀性并获得适当的选择性。 用于研磨多晶硅膜的CMP浆料包括（a）0.1-30重量％的金属氧化物，（b）0.05-5重量％的季铵基化合物，（c）0.01-1重量％的叔胺 ，（d）0.01〜1重量％的阳离子聚合物。 金属氧化物包括SiO 2，Al 2 O 3，CeO 2和ZrO 2中的一种。 金属氧化物的一次粒子的尺寸相当于10〜70nm。 金属氧化物的非表面积相当于50〜300m 2 / g。
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公开(公告)号：KR1020050019626A
公开(公告)日：2005-03-03
申请号：KR1020030057521
申请日：2003-08-20
Applicant: 제일모직주식회사
IPC: C09K3/14
CPC classification number: C09G1/02 , C01P2004/60 , C01P2004/64 , C09K3/1463 , H01L21/3212 , Y10S977/888
Abstract: PURPOSE: A slurry for chemical mechanical polishing(CMP) of a copper wiring material is provided to improve the selectivity ratio between an oxide layer and a metal layer, thus to reduce defects of a CMP process including dishing, erosion, corrosion, line recess, pitting, dishing and scratch, and to improve the polishing rate. CONSTITUTION: The slurry for CMP of a copper wiring material comprises: 0.1-50wt% of a metal oxide; 0.1-5wt% of a peroxide compound; 0.1-5wt% of carboxylic acids having 1 or more of carboxylic group; 0.01-0.1wt% of polyethylene glycol; 0.01-0.5wt% of an organic amine compound; and deionized water, wherein the metal oxide is selected from silica, alumina, ceria, zirconia, titania and mixtures thereof and has 10-70nm of a primary particle size, 10-300m2/g of the specific surface area, 100-200nm of a secondary particle size, and 0.5-4ea/nm2 of hydroxyl groups on the surface.
Abstract translation: 目的：提供铜布线材料的化学机械抛光（CMP）浆料，以提高氧化物层与金属层之间的选择比，从而减少CMP工艺中的缺陷，包括凹陷，腐蚀，腐蚀，管道凹陷， 点蚀，凹陷和划痕，并提高抛光速率。 构成：铜布线材料的CMP用浆料包含：0.1-50wt％的金属氧化物; 0.1-5重量％的过氧化物; 0.1-5重量％的具有1个以上羧基的羧酸; 0.01-0.1wt％的聚乙二醇; 0.01-0.5重量％的有机胺化合物; 和去离子水，其中金属氧化物选自二氧化硅，氧化铝，二氧化铈，氧化锆，二氧化钛及其混合物，并具有10-70nm的一次粒径，10-300m 2 / g的比表面积，100-200nm的 二次粒径和0.5-4ea / nm2的羟基表面。
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