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公开(公告)号：KR101411019B1
公开(公告)日：2014-06-24
申请号：KR1020110146562
申请日：2011-12-29
Applicant: 제일모직주식회사
IPC: C09K3/14 , H01L21/304
CPC classification number: C09K3/1409 , C09G1/02 , H01L21/31053
Abstract: 본 발명은 CMP 슬러리 조성물 및 이를 이용한 연마 방법에 관한 것으로서, 본 발명의 CMP 슬러리 조성물은 양의 제타 전위를 갖는 금속산화물 입자; 양쪽 이온성 화합물; 양이온성 계면활성제; 및 초순수를 포함한다.
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公开(公告)号：KR1020120078104A
公开(公告)日：2012-07-10
申请号：KR1020100140290
申请日：2010-12-31
Applicant: 제일모직주식회사
IPC: C09K3/14 , H01L21/304
Abstract: PURPOSE: A CMP(chemical mechanical polishing) slurry composition is provided to remove defects like protrusion, stepped height, edge over erosion, scratch, dishing, SEAM stack, erosion, etc in two polishing steps and to improve planarity. CONSTITUTION: A CMP(chemical mechanical polishing) slurry composition comprises abrasive, a Fe(3+) compound or complex compound, a water-soluble polymer, and an amino acid. The abrasive composition has the polishing rate of a tungsten metal layer of 200-600 Å/min, and the polishing rate of an insulating layer is 600-1500 Å/min. The comprised amount of the Fe3+ compound or the complex compound is 0.1-1.5 weight% based on the composition.
Abstract translation: 目的：提供CMP（化学机械抛光）浆料组合物，以在两个抛光步骤中去除突起，阶梯高度，边缘过度侵蚀，划痕，凹陷，SEAM叠层，侵蚀等缺陷，并提高平面度。 构成：CMP（化学机械抛光）浆料组合物包含研磨剂，Fe（3+）化合物或络合物，水溶性聚合物和氨基酸。 磨料组合物的钨金属层的抛光速率为200-600 / min，绝缘层的抛光速率为600-1500 / min。 Fe3 +化合物或络合物的含量相对于组合物为0.1〜1.5重量％。
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公开(公告)号：KR1020100067952A
公开(公告)日：2010-06-22
申请号：KR1020080126563
申请日：2008-12-12
Applicant: 제일모직주식회사
IPC: C09K3/14
Abstract: PURPOSE: CMP slurry is provided to improve polishing speed of a silicone oxide film, to enhance polishing selectivity between the silicon oxide film and a silicon nitride film, and to prevent a filter from being blocked in a filtering process for removing impurities. CONSTITUTION: CMP slurry includes a substance which is selected from a group comprising a pyridine-based compound and a benzoic acid-based compound and a nonionic compound which is selected from a group comprising polyoxypropylene ether and polyoxyethylene oxypropylene copolymer. The nonionic compound is selected from a group comprising a chemical formula 1 or a chemical formula 2. The chemical formula 1 is R(OCHCH_3CH_2)_n-OR and the chemical formula 2 is RO(CH_2CH_2O)_x(CH(CH_3)CH_2O)_y(CH_2CH_2O)_z-OR. In the chemical formula 1, R and R' are a hydrogen or an alkyl group with a carbon number of 1~18.
Abstract translation: 目的：提供CMP浆料以改善氧化硅膜的抛光速度，以增强氧化硅膜和氮化硅膜之间的抛光选择性，并防止过滤器在用于除去杂质的过滤过程中被阻挡。 构成：CMP浆料包括选自吡啶类化合物和苯甲酸类化合物和选自包含聚氧丙烯醚和聚氧乙烯氧化丙烯共聚物的非离子化合物的基团的物质。 非离子化合物选自化学式1或化学式2的化合物。化学式1是R（OCHCH 3 CH 2）n -OR，化学式2是RO（CH 2 CH 2 O）_x（CH（CH 3）CH 2 O） （CH_2CH_2O）_z-OR。 在化学式1中，R和R'是氢或碳数为1〜18的烷基。
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公开(公告)号：KR1020090036985A
公开(公告)日：2009-04-15
申请号：KR1020070102314
申请日：2007-10-10
Applicant: 제일모직주식회사
IPC: C09K3/14 , H01L21/304
Abstract: A metal CMP slurry composition is provided to prevent the surface corrosion of polished wafer and the generation of organic residue. A chemical mechanical polishing slurry precursor composition comprises abrasive, complexing agent, anticorrosive agent and liquid carrier. The anticorrosive agent increases open circuit potential of open circuit potential at the state that does not add an anticorrosive agent, to 5-30%. The anticorrosive agent N,N-disubstituted aminomethyl benzotriazole derivative having a structure of the chemical formula (I): T-CH2-NR1R2.
Abstract translation: 提供金属CMP浆料组合物以防止抛光晶片的表面腐蚀和产生有机残余物。 化学机械抛光浆料前体组合物包含研磨剂，络合剂，防腐剂和液体载体。 防腐剂在不添加防锈剂的状态下将开路电位的开路电位提高到5-30％。 具有化学式（I）结构的防腐剂N，N-二取代氨基甲基苯并三唑衍生物：T-CH2-NR1R2。
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公开(公告)号：KR1020130077699A
公开(公告)日：2013-07-09
申请号：KR1020110146562
申请日：2011-12-29
Applicant: 제일모직주식회사
IPC: C09K3/14 , H01L21/304
CPC classification number: C09K3/1409 , C09G1/02 , H01L21/31053
Abstract: PURPOSE: A CMP slurry composition is provided to be able to minimize the dishing on the oxide film over a trench layer while maintaining the polishing speed ratio of the oxide film on the trench layer to the nitride film layer over 10. CONSTITUTION: A CMP slurry composition comprises metal oxide particles having a positive Zeta electric potential, zwitterionic compound, cationic surfactant, and ultra-pure water. The metal oxide particles are manufactured by calcination, flame oxidation or hydrothermal synthesis. The metal oxide particles having a positive Zeta electric potential have 70-150 nm of an average particle diameter and 10-50 m^2/g of a specific surface area. The metal oxide particles having a positive Zeta electric potential are ceria particles. A polishing method comprises a step of polishing a semiconductor wafer by using the CMP slurry composition. [Reference numerals] (AA) First grinding; (BB) Convex part; (CC) Concave part; (DD) Second grinding; (EE) Third grinding
Abstract translation: 目的：提供CMP浆料组合物，以便能够最小化在沟槽层上的氧化膜上的凹陷，同时保持沟槽层上的氧化物膜与超过10°的氮化物膜层的抛光速度比。构成：CMP浆料 组合物包含具有正ζ电位的金属氧化物颗粒，两性离子化合物，阳离子表面活性剂和超纯水。 金属氧化物颗粒通过煅烧，火焰氧化或水热合成来制造。 具有正ζ电位的金属氧化物颗粒具有70-150nm的平均粒径和10-50m 2 / g的比表面积。 具有正Zeta电位的金属氧化物颗粒是二氧化铈颗粒。 抛光方法包括通过使用CMP浆料组合物来研磨半导体晶片的步骤。 （附图标记）（AA）第一次研磨; （BB）凸部; （CC）凹面; （DD）二次研磨; （EE）三次研磨
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Patent Agency Ranking
公开(公告)号：KR100949248B1
公开(公告)日：2010-03-26
申请号：KR1020070102314
申请日：2007-10-10
Applicant: 제일모직주식회사
IPC: C09K3/14 , H01L21/304
Abstract: 본 발명은 금속 연마용 CMP 슬러리 조성물에 관한 것으로, 더 상세하게는 부식 방지제를 첨가하지 않은 연마 조성물의 연마 표면의 E
O (개방 회로 전위)에 비교하여 연마 표면의 E
O 를 5% 이상 30% 이하로 증가시키는 부식 방지제를 포함하는 슬러리 조성물에 관한 것이다.
본 발명에 의하면 연마되는 웨이퍼의 표면 부식이 없으면서도 유기 찌꺼기 발생이 없는 연마 조성물을 제공할 수 있다.
금속, 연마, CMP 슬러리, 부식 방지제, Eo, 부식, 찌꺼기-
公开(公告)号：KR1020090036982A
公开(公告)日：2009-04-15
申请号：KR1020070102311
申请日：2007-10-10
Applicant: 제일모직주식회사
IPC: C09K3/14
Abstract: A slurry composition for polishing a copper line is provided to minimize erosion and dishing by controlling the polishing speed of copper line, barrier film and insulating film and to improve the storage stability of a slurry composition. A slurry composition for polishing a copper line comprises ultrapure, abrasive, organic acid, oxidizer and corrosion inhibitor. A slurry composition for polishing bulk copper comprises abrasive of which the mean value of a first particle diameter is 1~30 nm, and the particle association degree is 3 or less. A slurry composition for polishing a barrier comprises abrasive of which the mean value of a first particle diameter is 30~100nm, and the particle association degree is 3 or less.
Abstract translation: 提供了用于抛光铜线的浆料组合物，以通过控制铜线，阻挡膜和绝缘膜的抛光速度来最小化侵蚀和凹陷，并提高浆料组合物的储存稳定性。 用于抛光铜线的浆料组合物包括超纯，磨料，有机酸，氧化剂和腐蚀抑制剂。 用于抛光体铜的浆料组合物包括第一粒径的平均值为1〜30nm，粒子缔合度为3以下的研磨剂。 用于研磨阻挡层的浆料组合物包括第一粒径的平均值为30〜100nm，粒子缔合度为3以下的研磨剂。
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公开(公告)号：KR101480179B1
公开(公告)日：2015-01-09
申请号：KR1020110147630
申请日：2011-12-30
Applicant: 제일모직주식회사
IPC: C09K3/14 , H01L21/304
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/30625 , H01L21/31053
Abstract: 본 발명의 CMP 슬러리 조성물은 금속산화물 입자; 디이소시아네이트 화합물; 및 초순수를 포함한다. 상기 CMP 슬러리 조성물은 볼록부와 오목부로 이루어진 웨이퍼 표면의 연마속도를 선택적으로 조절할수 있고, 1차와 2차 연마는 빠르게 진행하고 2차 연마의 질화막 스톱핑을 크게할 수 있다.
Abstract translation: 本发明的CMP浆料组合物包含金属氧化物颗粒; 二异氰酸酯化合物; 和超纯水。 CMP浆料组合物可以选择性地控制由凸部和凹部构成的晶片表面的抛光速率，并且一次和二次抛光可以快速进行并且可以增加二次抛光的氮化停止。
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公开(公告)号：KR1020140143058A
公开(公告)日：2014-12-15
申请号：KR1020130065012
申请日：2013-06-05
Applicant: 제일모직주식회사
IPC: C09K3/14 , H01L21/304
Abstract: The present invention relates to a CMP slurry composition for polishing a silicon wafer, comprising deionized water, an abrasive, a water-soluble polymer, an acetic acid-based chelating agent, a phosphoric acid-based chelating agent, and a pH adjuster. The CMP slurry composition shows excellent polishing effect on a silicon wafer in the second polishing to polish mirror surfaces after the first polishing and has little defect after polishing the mirror surfaces.
Abstract translation: 本发明涉及一种用于抛光硅晶片的CMP浆料组合物，其包括去离子水，研磨剂，水溶性聚合物，乙酸类螯合剂，磷酸类螯合剂和pH调节剂。 CMP浆料组合物在第二次抛光中对硅晶片的抛光效果优异，在第一次抛光后抛光镜面，在抛光镜面后几乎没有缺陷。
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公开(公告)号：KR101178714B1
公开(公告)日：2012-08-31
申请号：KR1020080126563
申请日：2008-12-12
Applicant: 제일모직주식회사
IPC: C09K3/14
Abstract: 본 발명은 물; 연마입자; 피리딘계 화합물 및 벤조산계 화합물로 구성된 군에서 선택된 1종 이상의 물질; 및 폴리옥시프로필렌에테르 및 폴리옥시에틸렌옥시프로필렌공중합체로 구성된 군에서 선택된 1종 이상의 비이온성 화합물을 포함하는 CMP 슬러리를 제공한다.
본 발명에 따라, CMP 슬러리에 피리딘계 화합물 및/또는 벤조산계 화합물과 함께, 폴리옥시프로필렌에테르 및/또는 폴리옥시에틸렌옥시프로필렌 공중합체의 비이온성 화합물을 첨가하는 경우, 실리콘 산화막의 연마속도를 향상시키고, 실리콘 산화막과 실리콘 질화막 간의 연마 선택비를 높일 수 있으며, 불순물 제거를 위한 필터링 공정에서 필터 막힘 및 연마입자 고형분 손실 문제를 해결할 수 있다.
CMP 슬러리, 필터 막힘, 피리딘, 벤조산, 비이온성
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