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公开(公告)号:KR101389832B1
公开(公告)日:2014-04-30
申请号:KR1020120126525
申请日:2012-11-09
Applicant: 한국과학기술연구원
IPC: H01L31/0749 , H01L31/042 , H01L31/18
CPC classification number: H01L31/0322 , H01L31/0326 , H01L31/03923 , H01L31/072 , H01L31/0749 , Y02E10/541 , Y02P70/521
Abstract: The present invention relates to CIGS or CZTS based film solar cells and a method for preparing thereof. According to one embodiment of the present invention, the CIGS or CZTS based film solar cells and a method for preparing thereof include a substrate, a molybdenum backside electrode layer, a Cu thin film, and a light absorption powder layer. The composition of light absorption powder layer has CuxInyGa1-y(SzSe1-z)2 (0
Abstract translation: 本发明涉及基于CIGS或CZTS的薄膜太阳能电池及其制备方法。 根据本发明的一个实施例,基于CIGS或CZTS的薄膜太阳能电池及其制备方法包括基板,钼背面电极层,Cu薄膜和光吸收粉末层。 光吸收粉末层的组成具有CuxInyGa1-y(SzSe1-z)2(0
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公开(公告)号:KR101267254B1
公开(公告)日:2013-05-23
申请号:KR1020110083444
申请日:2011-08-22
Applicant: 한국과학기술연구원
IPC: H01L31/0445 , H01L31/0216 , H01L31/18
CPC classification number: H01L31/0322 , Y02E10/541 , Y02P70/521
Abstract: 본발명은구리인듐셀레늄(CIS)계또는구리인듐갈륨셀레늄(CIGS)계박막형광흡수층의제조방법및 이를이용한박막태양전지의제조방법에관한것으로, 더욱상세하게는 CIGS 분말입자도포층형성단계, 용매, 분산제및 결합제의제거에따른분말층형성단계, 분말층의가압에따른분말입자의충진밀도향상단계및 분말층의열처리를통한치밀한구조의박막형성단계를포함하는박막형광흡수층제조공정에관한것으로, 비진공공정인분말공정을이용하여저가의 CIS계또는 CIGS계박막을높은수율로제조할수 있는방법을제공한다.
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公开(公告)号:KR1020130021112A
公开(公告)日:2013-03-05
申请号:KR1020110083444
申请日:2011-08-22
Applicant: 한국과학기술연구원
IPC: H01L31/0445 , H01L31/0216 , H01L31/18
CPC classification number: H01L31/0322 , Y02E10/541 , Y02P70/521
Abstract: PURPOSE: A method for manufacturing a thin light absorption layer and a method for manufacturing a thin film solar cell using the same are provided to improve the density of a thin film in a low temperature sintering process by performing a powder process. CONSTITUTION: Coating solution is spread on a substrate to form a coating layer(S1). The coating solution includes copper indium selenium(CIS) or copper indium gallium selenium(CIGS) powder. A thermal process is performed on the coating layer under an inactive or a reductive gas atmosphere(S2). The powder layer is pressurized to improve the density of powder particles(S3). A thermal process is performed on the powder layer to form a thin film(S4). [Reference numerals] (S1) Forming a CIGS coating layer; (S2) Forming a powder layer according to volatilization of solvent; (S3) Pressurizing the powder layer; (S4) Forming a thin film by a thermal process
Abstract translation: 目的:提供一种薄型光吸收层的制造方法以及使用其制造薄膜太阳能电池的方法,以通过进行粉末处理来提高低温烧结工序中的薄膜的密度。 构成:将涂布液铺展在基材上形成涂层(S1)。 涂层溶液包括铜铟硒(CIS)或铜铟镓硒(CIGS)粉末。 在惰性或还原气体气氛下在涂层上进行热处理(S2)。 粉末层被加压以改善粉末颗粒的密度(S3)。 在粉末层上进行热处理以形成薄膜(S4)。 (附图标记)(S1)形成CIGS涂层; (S2)根据溶剂的挥发形成粉末层; (S3)加压粉末层; (S4)通过热处理形成薄膜
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