公开(公告)号：KR100456091B1

公开(公告)日：2004-11-08

申请号：KR1020020024523

申请日：2002-05-03

Applicant: 한국과학기술연구원

Inventor： 이종호 ,  김주선 ,  이해원 ,  임건자 ,  김태은

IPC: H01L21/304

Abstract: PURPOSE: A system for in-situ electrochemical monitoring of chemical mechanical planarization is provided to be capable of observing polishing speed and the electrical chemical change of slurry and a semiconductor wafer in real time. CONSTITUTION: A system for in-situ electrochemical monitoring of chemical mechanical planarization is provided with an operation electrode(1) attached to a wafer chuck(2), a reference electrode(3) contacting the polishing slurry supplied to the center portion of a polishing pad(8), and a reverse electrode(4) contacting the slurry at the peripheral portion of the polishing pad. Preferably, the operation electrode is attached to the lateral portion of the wafer chuck. Preferably, the operation electrode has a curved contact part corresponding to the contact portion of the wafer chuck.

Abstract translation: 目的：提供一种用于化学机械平面化的原位电化学监测的系统，能够实时观察抛光速度以及浆料和半导体晶片的电化学变化。 本发明提供了一种用于化学机械平坦化的原位电化学监测的系统，该系统具有附着于晶片卡盘（2）的操作电极（1），接触供应至抛光中心部分的抛光浆料的参考电极（3） 垫（8）和反向电极（4），其在抛光垫的周边部分与浆液接触。 优选地，操作电极附接到晶片卡盘的侧部。 优选地，操作电极具有对应于晶片吸盘的接触部分的弯曲接触部分。

公开(公告)号：KR100596688B1

公开(公告)日：2006-07-07

申请号：KR1020030031269

申请日：2003-05-16

Applicant: 한국과학기술연구원

Inventor： 이해원 ,  이종호 ,  김주선 ,  김태은 ,  임건자

IPC: H01L21/302

Abstract: 본 발명은 반도체의 절연기술 중 하나인 STI(Sallow Trench Isolation) 공정에서 사용되는 절연층을 기계 화학적인 방법으로 제거하기 위한 CMP 공정에 사용되는 나노 크기의 세라믹 분말을 연마제로 사용한 슬러리에 관한 것이다. 본 발명의 CMP용 슬러리는 나노 크기의 세리아 분말이 중성에서 안정하게 분산되도록 분산 안정성을 조절하는 첨가물들, 그리고 반도체 절연층중 산화물과 질화물의 연마율의 상대적인 비 (선택비)를 향상 시키는 첨가물들이 함유되어 있다. 본 발명의 자세한 슬러리 조성은 연마제로 1 - 5 중량%의 세리아, 분산 안정화제로 연마제에 대하여 2 - 3 중량%의 구연산, 선택비 제어제로 연마제에 대하여 1 - 5 중량%의 글리신, pH 조절제로 수산화칼륨과 질산이 증류수에 첨가되어 있으며, pH 4 - 12에서 안정한 조성을 가진다.
기계화학적연마, CMP, 세리아, 구연산, 글리신

公开(公告)号：KR1020040098938A

公开(公告)日：2004-11-26

申请号：KR1020030031269

申请日：2003-05-16

Applicant: 한국과학기술연구원

Inventor： 이해원 ,  이종호 ,  김주선 ,  김태은 ,  임건자

IPC: H01L21/302

Abstract: PURPOSE: High performance slurry for STI(shallow trench isolation)-CMP(chemical mechanical polishing) is provided to prevent a semiconductor pattern and equipment from being damaged by corrosion by controlling each polishing rate of a silica thin film and a silicon nitride thin film, by forming ceria slurry capable of achieving variable selectivity and by using the slurry in a neutral condition. CONSTITUTION: Distilled water is prepared. CeO2 particles having a nano size and 1-5 weight percent as compared with the distilled water are used as polishing agent. Slurry includes the distilled water and the CeO2 particles. Citric acid is used as a distribution stabilizer that transfers the isoelectric point of the slurry to an acid region to stabilize a distribution state in a neutral condition, having 2-3 weight percent as compared with the polishing agent.

Abstract translation: 目的：提供用于STI（浅沟槽隔离）-CMP（化学机械抛光）的高性能浆料，以通过控制二氧化硅薄膜和氮化硅薄膜的每种抛光速率来防止半导体图案和设备被腐蚀损坏， 通过形成能够实现可变选择性的二氧化铈浆料和通过在中性条件下使用该浆料。 构成：准备蒸馏水。 与蒸馏水相比，具有纳米尺寸和1-5重量％的CeO 2颗粒被用作抛光剂。 浆料包括蒸馏水和CeO2颗粒。 使用柠檬酸作为分散稳定剂，其将浆料的等电点转移到酸性区域以稳定在中性条件下的分布状态，其与抛光剂相比具有2-3重量％。

公开(公告)号：KR1020030086143A

公开(公告)日：2003-11-07

申请号：KR1020020024523

申请日：2002-05-03

Applicant: 한국과학기술연구원

Inventor： 이종호 ,  김주선 ,  이해원 ,  임건자 ,  김태은

IPC: H01L21/304

Abstract: PURPOSE: A system for in-situ electrochemical monitoring of chemical mechanical planarization is provided to be capable of observing polishing speed and the electrical chemical change of slurry and a semiconductor wafer in real time. CONSTITUTION: A system for in-situ electrochemical monitoring of chemical mechanical planarization is provided with an operation electrode(1) attached to a wafer chuck(2), a reference electrode(3) contacting the polishing slurry supplied to the center portion of a polishing pad(8), and a reverse electrode(4) contacting the slurry at the peripheral portion of the polishing pad. Preferably, the operation electrode is attached to the lateral portion of the wafer chuck. Preferably, the operation electrode has a curved contact part corresponding to the contact portion of the wafer chuck.

Abstract translation: 目的：提供化学机械平面化的原位电化学监测系统，能够实时观察抛光速度和浆料和半导体晶片的电化学变化。 构成：用于化学机械平面化的原位电化学监测的系统设置有附接到晶片卡盘（2）的操作电极（1），与提供给抛光中心部分的研磨浆料接触的参比电极（3） 衬垫（8）和与抛光垫周边部分处的浆料接触的反向电极（4）。 优选地，操作电极附接到晶片卡盘的侧部。 优选地，操作电极具有对应于晶片卡盘的接触部分的弯曲接触部分。

公开(公告)号：KR1020030063763A

公开(公告)日：2003-07-31

申请号：KR1020020004042

申请日：2002-01-24

Applicant: 한국과학기술연구원

Inventor： 이해원 ,  김상우 ,  이종호 ,  김주선 ,  임건자 ,  유장용 ,  김태은

IPC: C09K3/14 ,  B82B3/00 ,  B82Y40/00

CPC classification number: C09G1/02 ,  C01P2004/64 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/3212 ,  Y10S977/888

Abstract: PURPOSE: A slurry for a tungsten CMP (chemical mechanical polishing) is provided, which shows an excellent dispersion stability of nano-sized ceramic particles in an aqueous solution and a high polishing efficiency. CONSTITUTION: The slurry comprises 5-25 wt% of a polishing agent; 1-5 wt% of an oxidizing agent; 0.4-4 wt% of an oxidation accelerator; and 1-10 wt% of an oxidation acceleration stabilizer, and is stable at pH 3-5. Preferably the polishing agent is 5-10 wt% of nano-sized alumina or 5-25 wt% of nano-sized silica, and has an average particle size of 200 nm or less; the oxidizing agent is hydrogen peroxide; the oxidation accelerator is 0.05-0.5 M Fe(NO3)3; and the oxidation acceleration stabilizer is 1-10 wt% of citric acid, 0.5-5 wt% of malonic acid or 0.6-6 wt% of oxalic acid.

Abstract translation: 目的：提供用于钨CMP（化学机械抛光）的浆料，其显示了纳米级陶瓷颗粒在水溶液中的优异分散稳定性和高抛光效率。 构成：浆料包含5-25重量％的抛光剂; 1-5重量％的氧化剂; 0.4-4重量％的氧化促进剂; 和1-10重量％的氧化加速稳定剂，在pH 3-5时稳定。 抛光剂优选为5-10重量％的纳米尺寸氧化铝或5-25重量％的纳米尺寸二氧化硅，平均粒度为200nm以下; 氧化剂是过氧化氢; 氧化促进剂为0.05〜0.5M Fe（NO 3）3; 氧化加速稳定剂为柠檬酸1-10重量％，丙二酸0.5-5重量％，草酸0.6-6重量％。