公开(公告)号：KR101510217B1

公开(公告)日：2015-04-08

申请号：KR1020130029674

申请日：2013-03-20

Applicant: 한국기계연구원

Inventor： 정유진 ,  이지혜 ,  정준호 ,  최대근 ,  최준혁 ,  정주연 ,  이응숙

IPC: H01L29/786 ,  H01L21/336

Abstract: 본발명은비진공저온상태에서나노구조를제조할수 있는나노임프린트를이용한고결정성나노구조제조방법및 이를이용한트랜지스터의제조방법및 센서의제조방법에관한것으로, 기판을준비하는준비단계; 상기기판상에용액상태의박막을형성하는박막형성단계; 패턴이형성된스탬프를상기박막에임프린팅하여상기스탬프의패턴에대응되는형상을가지는나노구조를형성하는임프린팅단계; 상기나노구조의결정성장을향상시키도록상기임프린팅단계를통해형성된상기나노구조에잔류하는잔류물을제거하는잔류물제거단계; 상기잔류물제거단계를통해잔류물이제거된상기나노구조를수열공정을통해성장시키는성장단계;를포함하며, 상기임프린팅단계는패턴이형성된스탬프를상기용액상태의박막에접촉시키되모세관현상을통해상기스탬프의패턴내부로상기용액상태의박막을충진시키는스탬프접촉단계; 상기스탬프의상측으로자외선을조사하여상기용액상태의박막을경화시키는경화단계; 상기경화단계를통해경화된박막으로부터상기스탬프를제거하는스탬프제거단계;를포함하는것을특징으로한다.

公开(公告)号：KR1020140115070A

公开(公告)日：2014-09-30

申请号：KR1020130029674

申请日：2013-03-20

Applicant: 한국기계연구원

Inventor： 정유진 ,  이지혜 ,  정준호 ,  최대근 ,  최준혁 ,  정주연 ,  이응숙

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/0665 ,  H01L29/04 ,  H01L29/78696

Abstract: Provided are a method for fabricating a high crystalline nanostructure using nanoimprint lithography and a transistor and a sensor using the nanostructure fabricated thereby. The method for fabricating a high crystalline nanostructure using nanoimprint lithography comprises a preparation step of preparing a substrate; a thin film formation step of forming a thin film on the substrate; an imprinting step of forming a nanostructure by imprinting a patterned stamp on the thin film; a residues removal step of removing residues remaining on the nanostructure to improve growth of crystals in the nanostructure; and a growth step of growing the nanostructure from which the residues have been removed through a hydrothermal process. According to the present invention, since the nanostructure is grown in a non-vacuum low-temperature state, the costs can be saved. Also, the growth of the crystals in the nanostructure can be improved by removing the residues in the nanostructure.

Abstract translation: 提供了使用纳米压印光刻制造高结晶纳米结构的方法，以及使用由其制造的纳米结构的晶体管和传感器。 使用纳米压印光刻制造高结晶纳米结构的方法包括制备基底的制备步骤; 在所述基板上形成薄膜的薄膜形成步骤; 通过在薄膜上压印图案化的印模来形成纳米结构的压印步骤; 去除残留在纳米结构上的残留物以改善纳米结构晶体生长的残余物去除步骤; 以及生长步骤，其中通过水热法除去残余物的纳米结构。 根据本发明，由于纳米结构在非真空低温状态下生长，因此可以节省成本。 此外，通过去除纳米结构中的残余物，可以改善纳米结构中晶体的生长。