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公开(公告)号：KR1020150083479A
公开(公告)日：2015-07-20
申请号：KR1020140002915
申请日：2014-01-09
Applicant: 한국전자통신연구원
IPC: C01G9/02
CPC classification number: C01G9/02 , C01G1/02 , C01P2004/16 , C01P2004/22 , C01P2006/40 , H01G9/204 , H01G9/2059 , Y02E10/542
Abstract: 금속산화물제조방법이제공된다. 본발명의개념에따른금속산화물제조방법은금속전구체물질, 염기물질, 및증류수를혼합하여, 준비용액을제조하는것; 상기준비용액에계면활성제를첨가하여, 전구체용액을형성하는것; 상기전구체내에금속산화물나노입자들을형성하는것; 및상기금속산화물나노입자들에의해, 다결정금속산화물을제조하는것을포함할수 있다. 상기다결정금속산화물은시트또는나노와이어의형태를가질수 있다.
Abstract translation: 提供了一种生产金属氧化物的方法。 根据本发明的金属氧化物的制造方法可以包括以下步骤：将金属前体材料，基材和蒸馏水彼此混合以制备制备溶液; 向制备溶液中加入表面活性剂以形成前体溶液; 在前体中形成金属氧化物纳米颗粒; 并通过金属氧化物纳米颗粒生产多晶金属氧化物。 多晶金属氧化物可以具有片状或纳米线形状。
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公开(公告)号：KR1020150018243A
公开(公告)日：2015-02-23
申请号：KR1020130094908
申请日：2013-08-09
Applicant: 한국전자통신연구원
IPC: C01G9/02 , H01B1/16 , H01L31/042
CPC classification number: H01L31/1884 , C01G1/02 , C01P2006/40 , C30B7/14 , C30B29/16 , H01G9/2031 , Y02E10/542 , Y02P70/521
Abstract: 금속 산화물의 제조방법 및 태양전지용 기판의 제조방법이 제공된다. 본 발명의 개념에 따른 금속 산화물 제조방법은 금속 전구체 물질, 염기 물질, 양쪽성 분자들, 및 증류수를 혼합하여, 금속 전구체 용액을 제조하는 것; 및 상기 금속 전구체 용액을 제1 열처리하여, 금속 산화물을 형성하는 것; 및 상기 금속 산화물을 제2 열처리하여, 단결정 구조를 갖는 금속 산화물 디스크 쌍을 형성하는 것을 포함하되, 상기 단결정 아연 산화물 디스크 쌍은 제1 디스크 및 상기 제1 디스크와 수직적으로 이격 배치된 제2 디스크를 포함할 수 있다.
Abstract translation: 本发明涉及金属氧化物的制造方法和太阳能电池用基板的制造方法。 根据本发明的金属氧化物的制造方法包括：通过混合金属前体材料，基材，两性离子分子和蒸馏水来制造金属前体溶液的步骤; 通过对金属前体溶液进行一次热处理而形成金属氧化物的工序; 以及通过对金属氧化物进行二次热处理来形成具有单晶结构的金属氧化物盘对的步骤，其中，单晶氧化锌盘对能够包括第一盘和布置成垂直分离的第二盘 第一个磁盘。
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公开(公告)号：KR1020120059269A
公开(公告)日：2012-06-08
申请号：KR1020100120940
申请日：2010-11-30
Applicant: 한국전자통신연구원
IPC: H01L21/027
CPC classification number: C01G9/02 , B82Y30/00 , C01G23/053 , C01P2004/03 , C01P2004/13 , C01P2004/16 , H01L21/0274 , G03F7/2022
Abstract: PURPOSE: A method for forming a TiO2 array is provided to reduce process costs by using a nano-imprint mode and an electronic beam lithography method and to reduce the size of a nano pattern. CONSTITUTION: Polymer nano patterns are formed on a substrate(2). Monomer mono-layers are formed between the polymer nano patterns at the substrate. A seed layer is formed between the monomer mono-layers at the substrate. A ZnO(Zinc Oxide)(7) is grown up on the seed layer and a ZnO template is formed. The polymer nano patterns are formed by using a nano-imprint mode. A titanium dioxide is formed on the ZnO surface of the ZnO template and the ZnO is eliminated.
Abstract translation: 目的：提供一种形成TiO 2阵列的方法，以通过使用纳米压印模式和电子束光刻方法来降低工艺成本并减小纳米图案的尺寸。 构成：在基材（2）上形成聚合物纳米图案。 在基材的聚合物纳米图案之间形成单体单层。 在基材的单体单层之间形成种子层。 在种子层上生长ZnO（氧化锌）（7），形成ZnO模板。 通过使用纳米压印模式形成聚合物纳米图案。 在ZnO模板的ZnO表面上形成二氧化钛，并且除去ZnO。
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公开(公告)号：KR1020100092229A
公开(公告)日：2010-08-20
申请号：KR1020090011512
申请日：2009-02-12
Applicant: 한국전자통신연구원
IPC: G03F7/00 , H01L21/027
CPC classification number: G03F7/0002 , B29C59/022 , H01L21/302 , H01L21/30604
Abstract: PURPOSE: A patterning method of a semiconductor material is provided to economically operate the method by forming a zinc oxide crystal film without using an expensive catalyst. CONSTITUTION: A patterning method of a semiconductor material comprises the following steps: forming a molding pattern on a substrate(100) to expose the substrate in between the substrate and a protrusion unit using an imprint process; forming a first film(110) coving the exposed substrate; removing the molding pattern to expose the substrate under the first film; forming a seed film covering the exposed substrate; and forming a metal oxide crystal film from the seed film.
Abstract translation: 目的：提供半导体材料的图案化方法，以便在不使用昂贵的催化剂的情况下形成氧化锌晶体膜来经济地操作该方法。 构成：半导体材料的图案化方法包括以下步骤：在基板（100）上形成模制图案，以使用压印工艺在基板和突出单元之间露出基板; 形成第一薄膜（110），该第一薄膜（110）将暴露的基底 去除所述模制图案以将所述基底暴露在所述第一膜下方; 形成覆盖所述暴露的基板的种子膜; 从种子膜形成金属氧化物晶体膜。
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公开(公告)号：KR100889482B1
公开(公告)日：2009-03-19
申请号：KR1020070127791
申请日：2007-12-10
Applicant: 한국전자통신연구원
IPC: H01L21/027 , G03F7/20 , B82Y40/00
CPC classification number: G03F7/0002 , B01J23/007 , B01J23/80 , B01J37/0215 , B01J37/03 , B82Y10/00 , B82Y40/00 , B81C1/0046
Abstract: A pattern formation method of the catalyst using the nano imprint process is provided to increase the surface area of the obtained catalyst by performing the patterning process and the sintering process by the imprinting manner. The catalyst turns out slurry and forms the catalyst slurry(S11). A stamp is manufactured in order to form the catalyst pattern(S12). The catalyst slurry is coated on the top of the substrate and is contacted with the stamp. The catalyst pattern is formed by performing the pattern and sintering processes through the nano imprint method, at the same time(S13). The catalyst pattern is dried(S14). The catalyst is the Cu:Zn system methanol synthesis catalyst manufactured by the hydrotalcite.
Abstract translation: 提供使用纳米压印方法的催化剂的图案形成方法，以通过以压印方式进行图案化工艺和烧结工艺来增加所获得的催化剂的表面积。 催化剂产生浆料并形成催化剂浆料（S11）。 制造印模以形成催化剂图案（S12）。 将催化剂浆料涂覆在基材的顶部上并与印模接触。 通过纳米压印法同时进行图案和烧结工艺，形成催化剂图案（S13）。 将催化剂图案干燥（S14）。 催化剂是由水滑石制造的Cu：Zn系甲醇合成催化剂。
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Patent Agency Ranking
公开(公告)号：KR100843552B1
公开(公告)日：2008-07-04
申请号：KR1020070071993
申请日：2007-07-19
Applicant: 한국전자통신연구원
IPC: H01L21/027 , B82Y40/00
CPC classification number: H01L21/31144 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/0331 , H01L51/0022 , Y10S977/889 , H01L21/0272
Abstract: A nano-electrode line manufacturing method using nano-imprint lithography is provided to prevent crosstalk effect by forming a metal layer of a line type independently. A nano-electrode line manufacturing method includes the steps of: forming an insulating layer(2), a first photoresist layer(3), and a second photoresist of drop type on a substrate(1); forming an imprint mold having a plurality of molding patterns on the upper surface of the second photoresist; applying the second photoresist to the mold pattern by pressing the mold; hardening the second photoresist by irradiating the UV light to the mold; removing the mold from the second photoresist; patterning the second photoresist; patterning the first photoresist layer by using the second photoresist as a mask; patterning the insulating layer; and forming a metal layer between the patterned insulating layers.
Abstract translation: 提供使用纳米压印光刻的纳米电极线制造方法，以通过独立地形成线型金属层来防止串扰效应。 纳米电极线的制造方法包括以下步骤：在基板（1）上形成绝缘层（2），第一光致抗蚀剂层（3）和第二液晶型光致抗蚀剂; 在所述第二光致抗蚀剂的上表面上形成具有多个成型图案的压印模具; 通过按压模具将第二光致抗蚀剂施加到模具图案上; 通过将UV光照射到模具来硬化第二光致抗蚀剂; 从第二光致抗蚀剂去除模具; 图案化第二光致抗蚀剂; 通过使用第二光致抗蚀剂作为掩模来图案化第一光致抗蚀剂层; 图案化绝缘层; 以及在图案化的绝缘层之间形成金属层。
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公开(公告)号：KR1020140068311A
公开(公告)日：2014-06-09
申请号：KR1020120134663
申请日：2012-11-26
Applicant: 한국전자통신연구원
IPC: H01L31/042 , H01L31/18
CPC classification number: Y02E10/542 , Y02P70/521 , H01L31/18 , H01L31/042
Abstract: A method of forming a graphene-quantum dot complex according to one embodiment of the present invention includes forming quantum dots, forming graphene, forming a compound including the quantum dots and diazonium salt, and forming a complex formed by covalently bonding the graphene and the quantum dots by depositing the compound including the quantum dots and the diazonium salt on the graphene. The diazonium salt is reduced to form aryl radicals. The aryl radicals and the graphene form covalent bonds.
Abstract translation: 根据本发明的一个实施方案的形成石墨烯 - 量子点复合物的方法包括形成量子点，形成石墨烯，形成包括量子点和重氮盐的化合物，并形成通过共价键合石墨烯和量子 通过将包含量子点和重氮盐的化合物沉积在石墨烯上形成点。 重氮盐被还原形成芳基。 芳基和石墨烯形成共价键。
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公开(公告)号：KR1020130020184A
公开(公告)日：2013-02-27
申请号：KR1020110082643
申请日：2011-08-19
Applicant: 한국전자통신연구원
CPC classification number: H01G9/2013 , B82Y30/00 , H01G9/2031 , H01G9/2059 , Y02E10/542 , Y02P70/521
Abstract: PURPOSE: A dye-sensitized solar cell and a method for manufacturing an electrolyte are provided to improve the electric conductivity of the electrolyte by reducing graphene oxide using alkyl imidazole iodine. CONSTITUTION: Graphene is reduced from graphene oxide(S1000). The reduced graphene is obtained by centrifuging solutions with the graphene oxide(S1200). The graphene is dissolved in carbonate solvents(S2000). An oxide reducing agent including alkyl imidazole iodine is added to the carbonate solvent with the graphene(S3000). [Reference numerals] (AA) Start; (BB) End; (S1000) Reducing graphene from graphene oxide; (S1100) Dissolving the graphene oxide in an alky imidazole iodine and water mixed solvent; (S1200) Obtaining the reduced graphene by centrifuging solutions with the graphene oxide; (S2000) Producing solvent by dissolving the graphene in carbonate; (S3000) Producing electrolyte by adding alky imidazole iodine and iodine to the solvent
Abstract translation: 目的：提供染料敏化太阳能电池和电解质的制造方法，以通过使用烷基咪唑碘还原石墨烯氧化物来改善电解质的导电性。 构成：石墨烯氧化还原石墨烯（S1000）。 通过用石墨烯氧化物离心溶液获得还原的石墨烯（S1200）。 将石墨烯溶解在碳酸盐溶剂中（S2000）。 使用石墨烯将含有烷基咪唑碘的氧化还原剂加入到碳酸酯溶剂中（S3000）。 （附图标记）（AA）开始; （BB）结束; （S1000）从石墨烯氧化物还原石墨烯; （S1100）将氧化石墨烯溶解在惰性咪唑碘和水混合溶剂中; （S1200）通过用石墨烯氧化物离心溶液获得还原的石墨烯; （S2000）通过将石墨烯溶解在碳酸盐中产生溶剂; （S3000）通过向溶剂中加入碘咪唑碘和碘来生产电解液
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公开(公告)号：KR1020110044363A
公开(公告)日：2011-04-29
申请号：KR1020090100987
申请日：2009-10-23
Applicant: 한국전자통신연구원
IPC: C03C27/12
Abstract: PURPOSE: A method for binding a glass substrate using glass frit is provided to bind a pair of glass substrates and a sealing material using a material preventing the penetration of laser. CONSTITUTION: A first glass substrate(210) and a second glass substrate(220) are prepared. A sealing material(230) is formed on the first glass substrate. The first glass substrate and the second glass substrate are arranged. Glass frit(240) is applied or arranged on the lateral sides of the first glass substrate and the second glass substrate. A material for preventing the penetration of laser is applied on the lateral sides of the first glass substrate and the second glass substrate. Laser is radiated in order to bind the first glass substrate and the second glass substrate. The glass frit is melted.
Abstract translation: 目的：提供一种使用玻璃料粘合玻璃基板的方法，以使用防止激光穿透的材料来结合一对玻璃基板和密封材料。 构成：制备第一玻璃基板（210）和第二玻璃基板（220）。 密封材料（230）形成在第一玻璃基板上。 布置第一玻璃基板和第二玻璃基板。 玻璃料（240）被施加或布置在第一玻璃基板和第二玻璃基板的侧面上。 用于防止激光穿透的材料被施加在第一玻璃基板和第二玻璃基板的侧面上。 辐射激光以便结合第一玻璃基板和第二玻璃基板。 玻璃料熔化。
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公开(公告)号：KR100958659B1
公开(公告)日：2010-05-20
申请号：KR1020080072940
申请日：2008-07-25
Applicant: 한국전자통신연구원
IPC: H01L27/10
CPC classification number: H01L51/0591 , G11C13/0014 , G11C2213/15 , H01L27/28 , H01L51/0037
Abstract: 상호 반대 전하를 가지는 제1 분자 활성층 및 제2 분자 활성층의 적층 구조를 포함하는 기능성 분자 활성층을 구비하는 분자 전자 소자 및 그 제조 방법을 개시한다. 본 발명에 따른 분자 전자 소자는 제1 전극의 표면에 자기조립되어 있는 제1 말단과 양이온성 또는 음이온성 기를 가지는 제2 말단을 가지는 분자들로 이루어지는 유기 유전박막과, 유기 유전박막 위에 양이온과 음이온과의 선택적 자기조립 방식에 의해 적층되어 있고 고리화합물을 포함하는 전기활성 작용기를 가지는 기능성 분자 활성층과, 기능성 분자 활성층 위에 형성된 제2 전극을 포함한다.
분자 활성층, 유기 유전박막, 자기조립, 양이온, 음이온, 전자 소자
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