COMPOUND, THIN-FILM FORMING RAW MATERIAL, AND METHOD OF PRODUCING THIN-FILM

    公开(公告)号:US20220396590A1

    公开(公告)日:2022-12-15

    申请号:US17775716

    申请日:2020-11-16

    Abstract: Provided is a compound represented by the following general formula (1) or (2): where R1 to R4 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or the like, R5 and R6 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M1 represents a gallium atom or an indium atom; where R7 to R10 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or the like, R11 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and M2 represents a gallium atom or an indium atom.

    ETCHING METHOD
    3.
    发明公开
    ETCHING METHOD 审中-公开

    公开(公告)号:US20240030037A1

    公开(公告)日:2024-01-25

    申请号:US18023158

    申请日:2021-08-23

    CPC classification number: H01L21/31122

    Abstract: Provided is a method of etching a metal oxide film in a laminate including a substrate and the metal oxide film formed on a surface thereof by an atomic layer etching method, the method including: a first step of introducing, into a treatment atmosphere storing the laminate, at least one oxidizable compound selected from the group consisting of: an alcohol compound; an aldehyde compound; and an ester compound; and a second step of introducing an oxidizing gas into the treatment atmosphere after the first step.

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