公开(公告)号：WO2005004199A3

公开(公告)日：2006-08-10

申请号：PCT/US2004019088

申请日：2004-06-15

Applicant: ADVANCED TECH MATERIALS ,  KORZENSKI MICHAEL B ,  XU CHONGYING ,  BAUM THOMAS H ,  MINSEK DAVID ,  GHENCIU ELIODOR G

Inventor： KORZENSKI MICHAEL B ,  XU CHONGYING ,  BAUM THOMAS H ,  MINSEK DAVID ,  GHENCIU ELIODOR G

IPC: C11D1/00 ,  B08B3/04 ,  B08B3/08 ,  C11D3/30 ,  C11D7/26 ,  C11D7/28 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  G03F7/42 ,  H01L21/306 ,  H01L21/311

CPC classification number: G03F7/425 ,  C11D7/261 ,  C11D7/28 ,  C11D7/3209 ,  C11D7/5013 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/31133 ,  Y10S134/902 ,  Y10S438/906

Abstract: A composition including supercritical fluid and at least one additive selected from fluoro species, and primary and/or secondary amines, optionally with co-solvent, low k material attack-inhibitor(s) and/or surfactant(s). The composition has particular utility for cleaning of semiconductor wafers to remove post-ashing residues therefrom.

Abstract translation: 包含超临界流体和至少一种选自氟物质的添加剂，以及伯胺和/或仲胺，任选与共溶剂，低k物质侵袭抑制剂和/或表面活性剂组合的组合物。 该组合物具有用于清洁半导体晶片以从其中除去灰化后残留物的特殊用途。

公开(公告)号：WO2004042472A3

公开(公告)日：2004-07-15

申请号：PCT/US0333837

申请日：2003-10-27

Applicant: ADVANCED TECH MATERIALS

Inventor： KORZENSKI MICHAEL B ,  GHENCIU ELIODOR G ,  XU CHONGYING ,  BAUM THOMAS H

IPC: C11D7/02 ,  C11D7/10 ,  C11D7/32 ,  C11D7/50 ,  G03F7/42 ,  B05D1/00 ,  H01L21/00

CPC classification number: G03F7/423 ,  C11D7/02 ,  C11D7/10 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/5022

Abstract: A photoresist cleaning composition for removing photoresist and ion implanted photoresist from semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2) and alcohol for use in removing photoresist that is not ion-implanted. When the photoresist has been subjected to ion implantation, the cleaning composition additionally contains a fluorine ion source. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the photoresist and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having photoresist or ion implanted photoresist thereon.

Abstract translation: 一种用于从半导体衬底去除光致抗蚀剂和离子注入的光致抗蚀剂的光致抗蚀剂清洁组合物。 清洁组合物含有超临界CO 2（SCCO 2）和醇，用于除去未离子注入的光致抗蚀剂。 当光致抗蚀剂已经进行离子注入时，清洁组合物另外含有氟离子源。 这种清洁组合物克服了SCCO2作为清洁剂的固有缺陷，即SCCO2的非极性特征及其与溶解光致抗蚀剂中存在并且必须除去的物质如无机盐和极性有机化合物无关 从半导体基板进行高效清洗。 清洁组合物能够对其上具有光致抗蚀剂或离子注入的光致抗蚀剂的基材进行无损伤，无残留的清洁。

公开(公告)号：WO2004042472B1

公开(公告)日：2004-09-10

申请号：PCT/US0333837

申请日：2003-10-27

Applicant: ADVANCED TECH MATERIALS

Inventor： KORZENSKI MICHAEL B ,  GHENCIU ELIODOR G ,  XU CHONGYING ,  BAUM THOMAS H

IPC: C11D7/02 ,  C11D7/10 ,  C11D7/32 ,  C11D7/50 ,  G03F7/42 ,  B05D1/00 ,  H01L21/00

CPC classification number: G03F7/423 ,  C11D7/02 ,  C11D7/10 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/5022

Abstract: A photoresist cleaning composition for removing photoresist and ion implanted photoresist from semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2) and alcohol for use in removing photoresist that is not ion-implanted. When the photoresist has been subjected to ion implantation, the cleaning composition additionally contains a fluorine ion source. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the photoresist and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having photoresist or ion implanted photoresist thereon.

Abstract translation: 一种光刻胶清洗组合物，用于从半导体衬底上除去光刻胶和离子注入的光刻胶 该清洁组合物含有超临界CO 2（SCCO 2）和醇，用于去除未被离子注入的光致抗蚀剂。 当光致抗蚀剂已经进行离子注入时，清洁组合物另外含有氟离子源。 这种清洁组合物克服了作为清洁试剂的SCCO 2的固有缺陷，即SCCO 2的非极性特性以及与其无法溶解光致抗蚀剂中存在的必须除去的物质例如无机盐和极性有机化合物 从半导体衬底进行高效清洗。 该清洁组合物能够在其上具有光致抗蚀剂或离子注入光致抗蚀剂的基板上进行无损伤的无残留清洁。

公开(公告)号：WO2004042794A2

公开(公告)日：2004-05-21

申请号：PCT/US0334332

申请日：2003-10-29

Applicant: ADVANCED TECH MATERIALS

Inventor： KORZENSKI MICHAEL B ,  GHENCIU ELIODOR G ,  XU CHONGYING ,  BAUM THOMAS H

IPC: B08B7/00 ,  C11D7/02 ,  C11D7/10 ,  C11D7/32 ,  C11D7/50 ,  H01L21/306 ,  H01L21/311 ,  H01L

CPC classification number: C11D11/0047 ,  B08B7/0021 ,  C11D7/02 ,  C11D7/10 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/5022 ,  H01L21/02063 ,  H01L21/31116

Abstract: A cleaning composition for cleaning particulate contamination from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source and, optionally, hydroxyl additive. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in particulate contamination on wafer substrates and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having particulate contamination on Si/SiO2 substrates.

Abstract translation: 一种清洁组合物，用于清洁半导体衬底上小尺寸的颗粒污染物。 清洁组合物含有超临界二氧化碳（SCCO 2），醇，氟化物源和任选的羟基添加剂。 这种清洁组合物克服了SCCO 2作为清洁试剂的固有缺陷，即SCCO 2的非极性特性及其相关不能溶解存在于晶片衬底上的颗粒污染物中的物质例如无机盐和极性有机化合物， 必须从半导体衬底上去除以进行有效的清洁。 该清洁组合物能够在Si / SiO 2衬底上对具有微粒污染的衬底进行无损，无残留的清洁。

公开(公告)号：WO2004042794B1

公开(公告)日：2004-09-23

申请号：PCT/US0334332

申请日：2003-10-29

Applicant: ADVANCED TECH MATERIALS

Inventor： KORZENSKI MICHAEL B ,  GHENCIU ELIODOR G ,  XU CHONGYING ,  BAUM THOMAS H

IPC: B08B7/00 ,  C11D7/02 ,  C11D7/10 ,  C11D7/32 ,  C11D7/50 ,  H01L21/306 ,  H01L21/311 ,  B08B3/00 ,  B05D1/00 ,  H01L21/00

CPC classification number: C11D11/0047 ,  B08B7/0021 ,  C11D7/02 ,  C11D7/10 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/5022 ,  H01L21/02063 ,  H01L21/31116

Abstract: A cleaning composition for cleaning particulate contamination from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source and, optionally, hydroxyl additive. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in particulate contamination on wafer substrates and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having particulate contamination on Si/SiO2 substrates.

Abstract translation: 一种用于从半导体衬底上的小尺寸清洁颗粒污染物的清洁组合物。 清洁组合物含有超临界CO 2（SCCO 2），醇，氟化物源和任选的羟基添加剂。 这种清洁组合物克服了SCCO2作为清洁剂的固有缺陷，即SCCO2的非极性特征及其与溶解诸如无机盐和极性有机化合物的物质无关，这些物质存在于晶片衬底上的颗粒污染物中，并且 必须从半导体衬底去除以进行有效的清洁。 清洁组合物可以对Si / SiO2基板上的颗粒污染物进行无损伤，无残留的清洗。

公开(公告)号：AU2003284931A8

公开(公告)日：2004-06-07

申请号：AU2003284931

申请日：2003-10-27

Applicant: ADVANCED TECH MATERIALS

Inventor： GHENCIU ELIODOR G ,  BAUM THOMAS H ,  KORZENSKI MICHAEL B ,  XU CHONGYING

IPC: C11D7/02 ,  C11D7/10 ,  C11D7/32 ,  C11D7/50 ,  G03F7/42 ,  B05D1/00 ,  H01L21/00

Abstract: A photoresist cleaning composition for removing photoresist and ion implanted photoresist from semiconductor substrates. The cleaning composition contains supercritical CO 2 (SCCO2) and alcohol for use in removing photoresist that is not ion-implanted. When the photoresist has been subjected to ion implantation, the cleaning composition additionally contains a fluorine ion source. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the photoresist and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having photoresist or ion implanted photoresist thereon.

公开(公告)号：AU2003288966A8

公开(公告)日：2004-06-07

申请号：AU2003288966

申请日：2003-10-29

Applicant: ADVANCED TECH MATERIALS

Inventor： XU CHONGYING ,  KORZENSKI MICHAEL B ,  BAUM THOMAS H ,  GHENCIU ELIODOR G

IPC: B08B7/00 ,  C11D7/02 ,  C11D7/10 ,  C11D7/32 ,  C11D7/50 ,  H01L21/306 ,  H01L21/311 ,  B08B3/00 ,  B05D1/00 ,  H01L21/00

公开(公告)号：AU2003284932A1

公开(公告)日：2004-06-07

申请号：AU2003284932

申请日：2003-10-27

Applicant: ADVANCED TECH MATERIALS

Inventor： XU CHONGYING ,  BAUM THOMAS H ,  KORZENSKI MICHAEL B ,  GHENCIU ELIODOR G

IPC: C11D7/08 ,  C11D7/10 ,  C11D7/26 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  H01L21/02 ,  H01L21/3213 ,  C09K13/00 ,  C09K13/08 ,  H01L21/302 ,  C03C15/00 ,  C09K13/04 ,  C09K13/06

Abstract: A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO 2 (SCCO2), alcohol, fluoride source, an aluminum ion complexing agent and, optionally, corrosion inhibitor. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the post-etch residue and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having ashed or unashed aluminum/SiN/Si post-etch residue thereon.

公开(公告)号：DE60323143D1

公开(公告)日：2008-10-02

申请号：DE60323143

申请日：2003-10-27

Applicant: ADVANCED TECH MATERIALS

Inventor： KORZENSKI MICHAEL B ,  GHENCIU ELIODOR G ,  XU CHONGYING ,  BAUM THOMAS H

IPC: C09K13/00 ,  C03C15/00 ,  C09K13/04 ,  C09K13/06 ,  C09K13/08 ,  C11D7/08 ,  C11D7/10 ,  C11D7/26 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/3213

Abstract: A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO 2 (SCCO2), alcohol, fluoride source, an aluminum ion complexing agent and, optionally, corrosion inhibitor. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the post-etch residue and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having ashed or unashed aluminum/SiN/Si post-etch residue thereon.

公开(公告)号：CA2589168A1

公开(公告)日：2005-06-16

申请号：CA2589168

申请日：2004-11-30

Applicant: ADVANCED TECH MATERIALS

Inventor： GHENCIU ELIODOR G ,  BAUM THOMAS H ,  KORZENSKI MICHAEL B ,  XU CHONGYING

IPC: C09K13/00 ,  C09K13/04 ,  H01L21/302 ,  H01L21/306

Abstract: A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched substrates experience lower incidents of stiction relative to substrates etched using conventional wet etching techniques.