公开(公告)号：WO2012024603A3

公开(公告)日：2012-05-18

申请号：PCT/US2011048449

申请日：2011-08-19

Applicant: ADVANCED TECH MATERIALS ,  WARNER BABCOCK INSTITURE FOR GREEN CHEMISTRY LLC ,  KORZENSKI MICHAEL B ,  JIANG PING ,  NORMAN JAMES ,  WARNER JOHN ,  INGALLS LAURA ,  GNANAMGARI DINAKAR ,  STRICKLER FRED ,  MENDUM TED

Inventor： KORZENSKI MICHAEL B ,  JIANG PING ,  NORMAN JAMES ,  WARNER JOHN ,  INGALLS LAURA ,  GNANAMGARI DINAKAR ,  STRICKLER FRED ,  MENDUM TED

IPC: C22B11/00 ,  C22B7/00

CPC classification number: C22B11/046 ,  C22B1/005 ,  C22B3/0005 ,  C22B3/16 ,  C22B7/006 ,  C22B7/007 ,  C22B7/008 ,  C22B15/0006 ,  C22B15/0067 ,  C22B15/0069 ,  C22B15/0071 ,  C22B15/0073 ,  C22B15/0078 ,  Y02P10/214 ,  Y02P10/234 ,  Y02W30/54

Abstract: Processes for recycling electronic components removed from printed wire boards, whereby precious metals and base metals are extracted from the electronic components using environmentally friendly compositions. At least gold, silver and copper ions can be extracted from the electronic components and reduced to their respective metals using the processes and compositions described herein.

Abstract translation: 用于回收从印刷线路板上去除的电子元件的工艺，其中使用环保组合物从电子元件中提取贵金属和贱金属。 至少可使用本文所述的工艺和组合物从电子组件中提取金，银和铜离子并将其还原成它们各自的金属。

公开(公告)号：WO2010088194A3

公开(公告)日：2010-11-25

申请号：PCT/US2010022050

申请日：2010-01-26

Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  BILODEAU STEVEN ,  BOGGS KARL E ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MIRTH GEORGE ,  VAN BERKEL KIM

Inventor： CHEN TIANNIU ,  BILODEAU STEVEN ,  BOGGS KARL E ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MIRTH GEORGE ,  VAN BERKEL KIM

IPC: C11D3/43 ,  C11D3/44

CPC classification number: C11D11/0041 ,  C11D1/66 ,  C11D1/667 ,  C11D1/825 ,  C11D3/2072 ,  C11D3/2093 ,  C11D3/43 ,  C11D11/0047 ,  G03F7/70341 ,  G03F7/70925

Abstract: Compositions and methods of using the said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of the said apparatus. The said compositions comprise at least one organic solvent and one non-ionic surfactant. Moreover, the pH of the said composition is about 5 to 9.

Abstract translation: 使用所述组合物从表面除去聚合物材料的组合物和方法，优选地从光刻设备清洗污染物积聚物，而无需完全拆卸所述设备。 所述组合物包含至少一种有机溶剂和一种非离子表面活性剂。 此外，所述组合物的pH为约5至9。

公开(公告)号：WO2008080096A3

公开(公告)日：2008-11-06

申请号：PCT/US2007088643

申请日：2007-12-21

Applicant: ADVANCED TECH MATERIALS ,  COOPER EMANUEL I ,  SPARKS EILEEN ,  BOWERS WILLIAM R ,  BISCOTTO MARK A ,  YANDERS KEVIN P ,  KORZENSKI MICHAEL B ,  SONTHALIA PRERNA ,  THOMAS NICOLE E

Inventor： COOPER EMANUEL I ,  SPARKS EILEEN ,  BOWERS WILLIAM R ,  BISCOTTO MARK A ,  YANDERS KEVIN P ,  KORZENSKI MICHAEL B ,  SONTHALIA PRERNA ,  THOMAS NICOLE E

IPC: C09K13/08 ,  H01L21/311

CPC classification number: H01L21/31111 ,  B65D85/70 ,  C09K13/08 ,  G03F7/422 ,  H01L21/0206 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100 °C and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min -1 .

Abstract translation: 用于相对于多晶硅，氧化硅材料和/或硅化物材料从其上具有相同的微电子器件选择性去除氮化硅材料的组合物。 除去组合物包括氟硅酸，硅酸和至少一种有机溶剂。 典型的工艺温度低于约100℃，氮化物与氧化物蚀刻的典型选择性为约200:1至约2000:1。 在典型的工艺条件下，镍基硅化物以及钛和钽氮化物在很大程度上不受影响，多晶硅蚀刻速率小于约1埃。

公开(公告)号：WO2004042472B1

公开(公告)日：2004-09-10

申请号：PCT/US0333837

申请日：2003-10-27

Applicant: ADVANCED TECH MATERIALS

Inventor： KORZENSKI MICHAEL B ,  GHENCIU ELIODOR G ,  XU CHONGYING ,  BAUM THOMAS H

IPC: C11D7/02 ,  C11D7/10 ,  C11D7/32 ,  C11D7/50 ,  G03F7/42 ,  B05D1/00 ,  H01L21/00

CPC classification number: G03F7/423 ,  C11D7/02 ,  C11D7/10 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/5022

Abstract: A photoresist cleaning composition for removing photoresist and ion implanted photoresist from semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2) and alcohol for use in removing photoresist that is not ion-implanted. When the photoresist has been subjected to ion implantation, the cleaning composition additionally contains a fluorine ion source. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the photoresist and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having photoresist or ion implanted photoresist thereon.

Abstract translation: 一种光刻胶清洗组合物，用于从半导体衬底上除去光刻胶和离子注入的光刻胶 该清洁组合物含有超临界CO 2（SCCO 2）和醇，用于去除未被离子注入的光致抗蚀剂。 当光致抗蚀剂已经进行离子注入时，清洁组合物另外含有氟离子源。 这种清洁组合物克服了作为清洁试剂的SCCO 2的固有缺陷，即SCCO 2的非极性特性以及与其无法溶解光致抗蚀剂中存在的必须除去的物质例如无机盐和极性有机化合物 从半导体衬底进行高效清洗。 该清洁组合物能够在其上具有光致抗蚀剂或离子注入光致抗蚀剂的基板上进行无损伤的无残留清洁。

公开(公告)号：WO2007033008A3

公开(公告)日：2009-04-23

申请号：PCT/US2006035033

申请日：2006-09-11

Applicant: ADVANCED TECH MATERIALS ,  KORZENSKI MICHAEL B ,  XU CHONGYING ,  BAUM THOMAS H

Inventor： KORZENSKI MICHAEL B ,  XU CHONGYING ,  BAUM THOMAS H

IPC: C11D1/00 ,  H01L21/302 ,  H01L21/461

CPC classification number: C11D1/004 ,  B08B7/0021 ,  C11D1/83 ,  C11D3/042 ,  C11D3/046 ,  C11D3/201 ,  C11D3/2034 ,  C11D3/24 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/02101

Abstract: A cleaning composition for cleaning particulate contamination from small dimensions on microelectronic device substrates. The cleaning composition contains dense CO2 (preferably supercritical CO2 (SCCO2)), alcohol, fluoride source, anionic surfactant source, non-ionic surfactant source, and optionally, hydroxyl additive. The cleaning composition enables damage-free, residue-free cleaning of substrates having particulate contamination on Si/SiO2 substrates.

Abstract translation: 一种用于从微电子器件基底上的小尺寸清洁颗粒污染物的清洁组合物。 清洁组合物包含致密的CO 2（优选超临界CO 2（SCCO 2）），醇，氟化物源，阴离子表面活性剂源，非离子表面活性剂源和任选的羟基添加剂。 清洁组合物可以对Si / SiO2基板上的颗粒污染物进行无损伤，无残留的清洗。

公开(公告)号：WO2008080097A3

公开(公告)日：2008-10-09

申请号：PCT/US2007088644

申请日：2007-12-21

Applicant: ADVANCED TECH MATERIALS ,  VISINTIN PAMELA M ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MINSEK DAVID W ,  COOPER EMANUEL I ,  HSU MING-ANN ,  FLETCHER KRISTIN A

Inventor： VISINTIN PAMELA M ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MINSEK DAVID W ,  COOPER EMANUEL I ,  HSU MING-ANN ,  FLETCHER KRISTIN A

IPC: C11D11/00 ,  C11D1/62 ,  C11D3/00 ,  C11D3/02 ,  C11D3/24 ,  C11D3/43 ,  C11D7/08 ,  C11D7/28 ,  C11D7/50

CPC classification number: C11D3/0073 ,  C09K13/00 ,  C09K13/08 ,  C11D1/62 ,  C11D3/042 ,  C11D3/245 ,  C11D3/43 ,  C11D7/08 ,  C11D7/28 ,  C11D7/5004 ,  C11D11/0047 ,  H01L21/02063

Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon. In addition, the composition may be useful for the removal of titanium nitride layers from a microelectronic device having same thereon.

Abstract translation: 用于从其上具有所述残余物的微电子装置清除等离子体后蚀刻残留物的清洁组合物和方法。 该组合物实现了对来自微电子器件的残留物材料（包括含钛，含铜，含钨和/或含钴的蚀刻后残留物）的高效清洁，同时不损伤层间电介质，金属互连材料， 和/或也存在于其上的封盖层。 另外，该组合物可用于从其上具有相同材料的微电子器件去除氮化钛层。

公开(公告)号：WO2005013331A3

公开(公告)日：2007-03-22

申请号：PCT/US2004024326

申请日：2004-07-28

Applicant: ADVANCED TECH MATERIALS ,  XU CHONGYING ,  BAUM THOMAS H ,  KORZENSKI MICHAEL B

Inventor： XU CHONGYING ,  BAUM THOMAS H ,  KORZENSKI MICHAEL B

IPC: H01L23/58 ,  C23C16/16 ,  C23C16/18 ,  C23C16/34 ,  C23C16/44 ,  C23C16/448 ,  C23C18/00 ,  C23C18/12 ,  H01L20060101 ,  H01L21/288 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768

CPC classification number: C23C18/122 ,  C23C18/00 ,  C23C18/08 ,  C23C18/1204 ,  C23C18/1208 ,  C23C18/1212 ,  C23C18/1216 ,  C23C18/1275 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/288 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76841 ,  H01L21/76877 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the substrate surface. Such approach permits use of precursors that otherwise would be wholly unsuitable for deposition applications, as lacking requisite volatility and transport characteristics for vapor phase deposition processes.

Abstract translation: 材料在衬底上的超临界流体辅助沉积，例如用于集成电路器件制造的半导体衬底。 使用含有待沉积在基材表面上的材料的前体的超临界流体基组合物进行沉积。 这种方法允许使用否则将完全不适合于沉积应用的前体，因为对于气相沉积工艺缺乏必要的挥发性和传输特性。

公开(公告)号：WO2004042794B1

公开(公告)日：2004-09-23

申请号：PCT/US0334332

申请日：2003-10-29

Applicant: ADVANCED TECH MATERIALS

Inventor： KORZENSKI MICHAEL B ,  GHENCIU ELIODOR G ,  XU CHONGYING ,  BAUM THOMAS H

IPC: B08B7/00 ,  C11D7/02 ,  C11D7/10 ,  C11D7/32 ,  C11D7/50 ,  H01L21/306 ,  H01L21/311 ,  B08B3/00 ,  B05D1/00 ,  H01L21/00

CPC classification number: C11D11/0047 ,  B08B7/0021 ,  C11D7/02 ,  C11D7/10 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/5022 ,  H01L21/02063 ,  H01L21/31116

Abstract: A cleaning composition for cleaning particulate contamination from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source and, optionally, hydroxyl additive. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in particulate contamination on wafer substrates and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having particulate contamination on Si/SiO2 substrates.

Abstract translation: 一种用于从半导体衬底上的小尺寸清洁颗粒污染物的清洁组合物。 清洁组合物含有超临界CO 2（SCCO 2），醇，氟化物源和任选的羟基添加剂。 这种清洁组合物克服了SCCO2作为清洁剂的固有缺陷，即SCCO2的非极性特征及其与溶解诸如无机盐和极性有机化合物的物质无关，这些物质存在于晶片衬底上的颗粒污染物中，并且 必须从半导体衬底去除以进行有效的清洁。 清洁组合物可以对Si / SiO2基板上的颗粒污染物进行无损伤，无残留的清洗。

公开(公告)号：SG177915A1

公开(公告)日：2012-02-28

申请号：SG2011095296

申请日：2007-12-21

Applicant: ADVANCED TECH MATERIALS

Inventor： VISINTIN PAMELA M ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MINSEK DAVID W ,  COOPER EMANUEL I ,  HSU MING-ANN ,  FLETCHER KRISTIN A

Abstract: LIQUID CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUESCleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal intercormect material, and/or capping layers also present thereon. In addition, the composition may be useful for the removal of titanium nitride layers from a microelectronic device having same thereon.Figure 1

公开(公告)号：WO2012177620A2

公开(公告)日：2012-12-27

申请号：PCT/US2012043119

申请日：2012-06-19

Applicant: ADVANCED TECH MATERIALS ,  POE SARAH L ,  PARADISE CHRISTOPHER L ,  MUOLLO LAURA R ,  PAL RESHMA ,  WARNER JOHN C ,  KORZENSKI MICHAEL B

Inventor： POE SARAH L ,  PARADISE CHRISTOPHER L ,  MUOLLO LAURA R ,  PAL RESHMA ,  WARNER JOHN C ,  KORZENSKI MICHAEL B

IPC: H01M10/54 ,  B09B3/00 ,  H01M4/525 ,  H01M10/052

CPC classification number: H01M4/1391 ,  B03D1/006 ,  B03D1/008 ,  B03D1/02 ,  H01M4/04 ,  H01M4/1393 ,  H01M4/48 ,  H01M4/58 ,  H01M4/587 ,  H01M4/625 ,  H01M10/0525 ,  H01M10/54 ,  Y02W30/84

Abstract: A method of recovering lithium cobalt oxide from spent lithium ion batteries, wherein said method is more environmentally friendly than the methods presently known in the art. The method includes a froth flotation step using renewable and biodegradable solvents such as terpenes and formally hydrated terpenes. The method can also include a relithiation step to return the Li:Co ratio back to about 1:1 for use in second-life applications.

Abstract translation: 从废锂离子电池中回收钴酸锂的方法，其中所述方法比本领域目前已知的方法更环保。 该方法包括使用可再生和可生物降解的溶剂如萜烯和正式水合萜烯的泡沫浮选步骤。 该方法还可以包括将Li：Co比率返回到约1:1的重复步骤，以用于第二寿命应用中。