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公开(公告)号：US11971654B2
公开(公告)日：2024-04-30
申请号：US18208188
申请日：2023-06-09
Applicant: ASML NETHERLANDS B.V.
Inventor： Pieter-Jan Van Zwol , Adrianus Johannes Maria Giesbers , Johan Hendrik Klootwijk , Evgenia Kurganova , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Leonid Aizikovitsj Sjmaenok , Ties Wouter Van Der Woord , David Ferdinand Vles
IPC: G03F1/62
CPC classification number: G03F1/62
Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.
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公开(公告)号：US11287737B2
公开(公告)日：2022-03-29
申请号：US16761683
申请日：2018-11-05
Applicant: ASML NETHERLANDS B.V.
Inventor： Pieter-Jan Van Zwol , Adrianus Johannes Maria Giesbers , Johan Hendrik Klootwijk , Evgenia Kurganova , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Leonid Aizikovitsj Sjmaenok , Ties Wouter Van Der Woord , David Ferdinand Vles
IPC: G03F1/62
Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.
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公开(公告)号：US20210109438A1
公开(公告)日：2021-04-15
申请号：US17130537
申请日：2020-12-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Maxim Aleksandrovich Nasalevich , Erik Achilles Abegg , Nirupam Banerjee , Michiel Alexander Blauw , Derk Servatius Gertruda Brouns , Paul Janssen , Matthias Kruizinga , Egbert Lenderink , Nicolae Maxim , Andrey Nikipelov , Arnoud Willem Notenboom , Claudia Piliego , Mária Péter , Gijsbert Rispens , Nadja Schuh , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Antonius Willem Verburg , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen , Aleksandar Nikolov Zdravkov
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
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4.发明授权公开(公告)号：US11947256B2
公开(公告)日：2024-04-02
申请号：US16634910
申请日：2018-06-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Evgenia Kurganova , Adrianus Johannes Maria Giesbers , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Pieter-Jan Van Zwol , David Ferdinand Vles , Willem-Pieter Voorthuijzen
IPC: G03F1/62 , C01B32/186 , G03F7/00
CPC classification number: G03F1/62 , C01B32/186 , G03F7/70958 , G03F7/70983
Abstract: A method of manufacturing a pellicle for a lithographic apparatus, the method including locally heating the pellicle using radiative heating, and depositing coating material simultaneously on both sides of the pellicle, and pellicles manufactured according to this method. Also disclosed is the use of a multilayer graphene pellicle with a double-sided hexagonal boron nitride coating in a lithographic apparatus.
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公开(公告)号：US11635681B2
公开(公告)日：2023-04-25
申请号：US17375283
申请日：2021-07-14
Applicant: ASML Netherlands B.V.
Inventor： Derk Servatius Gertruda Brouns , Dennis De Graaf , Robertus Cornelis Martinus De Kruif , Paul Janssen , Matthias Kruizinga , Arnoud Willem Notenboom , Daniel Andrew Smith , Beatrijs Louise Marie-Joseph Katrien Verbrugge , James Norman Wiley
Abstract: A method comprising the steps of receiving a mask assembly comprising a mask and a removable EUV transparent pellicle held by a pellicle frame, removing the pellicle frame and EUV transparent pellicle from the mask, using an inspection tool to inspect the mask pattern on the mask, and subsequently attaching to the mask an EUV transparent pellicle held by a pellicle frame. The method may also comprise the following steps: after removing the pellicle frame and EUV transparent pellicle from the mask, attaching to the mask an alternative pellicle frame holding an alternative pellicle formed from a material which is substantially transparent to an inspection beam of the inspection tool; and after using an inspection tool to inspect the mask pattern on the mask, removing the alternative pellicle held by the alternative pellicle frame from the mask in order to attach to the mask the EUV transparent pellicle held by the pellicle frame.
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Patent Agency Ranking
公开(公告)号：US10908496B2
公开(公告)日：2021-02-02
申请号：US16093537
申请日：2017-04-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Maxim Aleksandrovich Nasalevich , Erik Achilles Abegg , Nirupam Banerjee , Michiel Alexander Blauw , Derk Servatius Gertruda Brouns , Paul Janssen , Matthias Kruizinga , Egbert Lenderink , Nicolae Maxim , Andrey Nikipelov , Arnoud Willem Notenboom , Claudia Piliego , Mária Péter , Gijsbert Rispens , Nadja Schuh , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Antonius Willem Verburg , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen , Aleksandar Nikolov Zdravkov
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
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公开(公告)号：US10466585B2
公开(公告)日：2019-11-05
申请号：US16062017
申请日：2016-12-02
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor： David Ferdinand Vles , Erik Achilles Abegg , Aage Bendiksen , Derk Servatius Gertruda Brouns , Pradeep K. Govil , Paul Janssen , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Johannes Petrus Martinus Bernardus Vermeulen , Willem-Pieter Voorthuijzen , James Norman Wiley
Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle includes at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle.
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公开(公告)号：US20240369920A1
公开(公告)日：2024-11-07
申请号：US18774721
申请日：2024-07-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Pieter-Jan VAN ZWOL , Sander Baltussen , Dennis De Graaf , Johannes Christiaan Leonardus Franken , Adrianus Johannes Maria Giesbers , Alexander Ludwig Klein , Johan Hendrik Klootwijk , Peter Simon Antonius Knapen , Evgenia Kurganova , Alexey Sergeevich Kuznetsov , Arnoud Willem Notenboom , Mahdiar Valefi , Marcus Adrianus Van De Kerkhof , Wilhelmus Theodorus Anthonius Johannes Van Den Einden , Ties Wouter Van Der Woord , Hendrikus Jan Wondergem , Aleksandar Nikolov Zdravkov
Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack including: at least one membrane layer supported by a planar substrate, wherein the planar substrate has an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate such that the membrane assembly has: a membrane formed from the at least one membrane layer, and a border holding the membrane, the border having the border region of the planar substrate and the first sacrificial layer situated between the border region and the membrane layer, wherein the selectively removing the inner region of the planar substrate includes using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer.
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公开(公告)号：US11762281B2
公开(公告)日：2023-09-19
申请号：US17130537
申请日：2020-12-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Maxim Aleksandrovich Nasalevich , Erik Achilles Abegg , Nirupam Banerjee , Michiel Alexander Blauw , Derk Servatius Gertruda Brouns , Paul Janssen , Matthias Kruizinga , Egbert Lenderink , Nicolae Maxim , Andrey Nikipelov , Arnoud Willem Notenboom , Claudia Piliego , Mária Péter , Gijsbert Rispens , Nadja Schuh , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Antonius Willem Verburg , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen , Aleksandar Nikolov Zdravkov
CPC classification number: G03F1/62 , G02B5/208 , G02B5/283 , G03F1/82 , G03F7/70191 , G03F7/70575 , G03F7/70916 , G03F7/70958 , G03F7/70983
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
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公开(公告)号：US11231646B2
公开(公告)日：2022-01-25
申请号：US16614815
申请日：2018-06-08
Applicant: ASML NETHERLANDS B.V.
Inventor： David Ferdinand Vles , Chaitanya Krishna Ande , Antonius Franciscus Johannes De Groot , Adrianus Johannes Maria Giesbers , Johannes Joseph Janssen , Paul Janssen , Johan Hendrik Klootwijk , Peter Simon Antonius Knapen , Evgenia Kurganova , Marcel Peter Meijer , Wouter Rogier Meijerink , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Raymond Olsman , Hrishikesh Patel , Mária Péter , Gerrit Van Den Bosch , Wilhelmus Theodorus Anthonius Johannes Van Den Einden , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Johannes Petrus Martinus Bernardus Vermeulen , Willem-Pieter Voorthuijzen , Hendrikus Jan Wondergem , Aleksandar Nikolov Zdravkov
IPC: G03F1/64
Abstract: A pellicle assembly is disclosed that has a pellicle frame defining a surface onto which a pellicle is to be attached. The pellicle assembly includes one or more three-dimensional expansion structures that allow the pellicle to expand under stress. There is also disclosed a pellicle assembly for a patterning device, the pellicle assembly including one or more actuators for moving the pellicle assembly towards and way from the patterning device.
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