公开(公告)号：US20250021015A1

公开(公告)日：2025-01-16

申请号：US18705509

申请日：2022-10-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Jin CHENG ,  Feng CHEN ,  Leiwu ZHENG ,  Yongfa FAN ,  Yen-Wen LU ,  Jen-Shiang WANG ,  Ziyang MA ,  Dianwen ZHU ,  Xi CHEN ,  Yu ZHAO

IPC: G03F7/00 ,  G03F1/36 ,  G03F1/70

Abstract: An etch bias direction is determined based on a curvature of a contour in a substrate pattern. The etch bias direction is configured to be used to enhance an accuracy of a semiconductor patterning process relative to prior patterning processes. In some embodiments, a representation of the substrate pattern is received, which includes the contour in the substrate pattern. The curvature of the contour of the substrate pattern is determined, and an etch bias direction is determined based on the curvature by considering curvatures of adjacent contour portions. A simulation model is used to determine an etch effect based on the etch bias direction for an etching process on the substrate pattern.

公开(公告)号：US20220260921A1

公开(公告)日：2022-08-18

申请号：US17616368

申请日：2020-05-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Jen-Shiang WANG ,  Feng CHEN ,  Matteo Alessandro FRANCAVILLA ,  Jan Wouter BIJLSMA

IPC: G03F7/20 ,  G06F30/392

Abstract: A patterning process modeling method includes determining, with a front end of a process model, a function associated with process physics and/or chemistry of an operation within a patterning process flow; and determining, with a back end of the process model, a predicted wafer geometry. The back end includes a volumetric representation of a target area on the wafer. The predicted wafer geometry is determined by applying the function from the front end to manipulate the volumetric representation of the wafer. The volumetric representation of the wafer may be generated using volumetric dynamic B-trees. The volumetric representation of the wafer may be manipulated using a level set method. The function associated with the process physics and/or chemistry of the operation within the patterning process flow may be a velocity/speed function. Incoming flux on a modeled surface of the wafer may be determined using ray tracing.

公开(公告)号：US20220299881A1

公开(公告)日：2022-09-22

申请号：US17636103

申请日：2020-08-01

Applicant: ASML NETHERLANDS B.V.

Inventor： Yunan ZHENG ,  Yongfa FAN ,  Mu FENG ,  Leiwu ZHENG ,  Jen-Shiang WANG ,  Ya LUO ,  Chenji ZHANG ,  Jun CHEN ,  Zhenyu HOU ,  Jinze WANG ,  Feng CHEN ,  Ziyang MA ,  Xin GUO ,  Jin CHENG

IPC: G03F7/20

Abstract: A method for generating modified contours and/or generating metrology gauges based on the modified contours. A method of generating metrology gauges for measuring a physical characteristic of a structure on a substrate includes obtaining (i) measured data associated with the physical characteristic of the structure printed on the substrate, and (ii) at least portion of a simulated contour of the structure, the at least a portion of the simulated contour being associated with the measured data; modifying, based on the measured data, the at least a portion of the simulated contour of the structure; and generating the metrology gauges on or adjacent to the modified at least a portion of the simulated contour, the metrology gauges being placed to measure the physical characteristic of the simulated contour of the structure.

公开(公告)号：US20230144584A1

公开(公告)日：2023-05-11

申请号：US18091716

申请日：2022-12-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Chi-Hsiang FAN ,  Feng CHEN ,  Wangshi ZHAO ,  Youping ZHANG

IPC: G06F30/398 ,  G03F1/36

CPC classification number: G06F30/398 ,  G03F1/36

Abstract: A method for determining an etch profile is described. The method includes determining a masking layer profile. Loading information can be determined. The loading information indicates dependence of an etch rate for the masking layer profile on a quantity and pattern of material being etched. Flux information can be determined. The flux information indicates dependence of the etch rate on an intensity and a spread angle of radiation incident on the masking layer profile. Re-deposition information can be determined. The re-deposition information indicates dependence of the etch rate on an amount of material removed from the masking layer profile that is re-deposited back on the masking layer profile. An output etch profile for the layer of the wafer is determined based on the loading information, the flux information, and/or the re-deposition information.

公开(公告)号：US20220179321A1

公开(公告)日：2022-06-09

申请号：US17442662

申请日：2020-03-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Ziyang MA ,  Jin CHENG ,  Ya LUO ,  Leiwu ZHENG ,  Xin GUO ,  Jen-Shiang WANG ,  Yongfa FAN ,  Feng CHEN ,  Yi-Yin CHEN ,  Chenji ZHANG ,  Yen- Wen LU

IPC: G03F7/20 ,  G06N3/08 ,  G06T7/00

Abstract: A method for training a patterning process model, the patterning process model configured to predict a pattern that will be formed by a patterning process. The method involves obtaining an image data associated with a desired pattern, a measured pattern of the substrate, a first model including a first set of parameters, and a machine learning model including a second set of parameters; and iteratively determining values of the first set of parameters and the second set of parameters to train the patterning process model. An iteration involves executing, using the image data, the first model and the machine learning model to cooperatively predict a printed pattern of the substrate; and modifying the values of the first set of parameters and the second set of parameters such that a difference between the measured pattern and the predicted pattern is reduced.