公开(公告)号：US20190339211A1

公开(公告)日：2019-11-07

申请号：US16465161

申请日：2017-11-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Ralph Timotheus HUIJGEN ,  Marc Jurian KEA ,  Marcel Theodorus Maria VAN KESSEL ,  Masashi ISHIBASHI ,  Chi-Hsiang FAN ,  Hakki Ergün CEKLI ,  Youping ZHANG ,  Maurits VAN DER SCHAAR ,  Liping REN

IPC: G01N21/956 ,  G03F7/20 ,  H01L21/66 ,  G03F9/00

Abstract: A method, system and program for determining a position of a feature referenced to a substrate. The method includes measuring a position of the feature, receiving an intended placement of the feature and determining an estimate of a placement error based on knowledge of a relative position of a first reference feature referenced to a first layer on a substrate with respect to a second reference feature referenced to a second layer on a substrate. The updated position may be used to position the layer of the substrate having the feature, or another layer of the substrate, or another layer of another substrate.

公开(公告)号：US20180239851A1

公开(公告)日：2018-08-23

申请号：US15900735

申请日：2018-02-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Alexander YPMA ,  Maurits VAN DER SCHAAR ,  Georgios TSIROGIANNIS ,  Leendert Jan KARSSEMEIJER ,  Chi-Hsiang FAN

IPC: G06F17/50 ,  G06N7/00

CPC classification number: G06F17/5009 ,  G03F7/70516 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7019 ,  G06N7/005

Abstract: A process of calibrating parameters of a stack model used to simulate the performance of measurement structures in a patterning process, the process including: obtaining a stack model used in a simulation of performance of measurement structures; obtaining calibration data indicative of performance of the measurement structures; calibrating parameters of the model by, until a termination condition occurs, repeatedly: simulating performance of the measurement structures with the simulation using a candidate model; approximating the simulation, based on a result of the simulation, with a surrogate function; and selecting a new candidate model based on the approximation.

公开(公告)号：US20180238737A1

公开(公告)日：2018-08-23

申请号：US15962826

申请日：2018-04-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Chi-Hsiang FAN ,  Maurits VAN DER SCHAAR ,  Youping ZHANG

IPC: G01J3/447 ,  G03C7/00

CPC classification number: G01J3/447 ,  G01J2003/283 ,  G01N21/47 ,  G03C7/00 ,  G03F7/70616 ,  G03F7/70633 ,  G03F7/70683

Abstract: A method of measuring n values of a parameter of interest (e.g., overlay) relating to a structure forming process, where n>1. The method includes performing n measurements on each of n+1 targets, each measurement performed with measurement radiation having a different wavelength and/or polarization combination and determining the n values for a parameter of interest from the n measurements of n+1 targets, each of the n values relating to the parameter of interest for a different pair of the layers. Each target includes n+1 layers, each layer including a periodic structure, the targets including at least n biased targets having at least one biased periodic structure formed with a positional bias relative to the other layers, the biased periodic structure being in at least a different one of the layers per biased target. Also disclosed is a substrate having such a target and a patterning device for forming such a target.

公开(公告)号：US20230144584A1

公开(公告)日：2023-05-11

申请号：US18091716

申请日：2022-12-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Chi-Hsiang FAN ,  Feng CHEN ,  Wangshi ZHAO ,  Youping ZHANG

IPC: G06F30/398 ,  G03F1/36

CPC classification number: G06F30/398 ,  G03F1/36

Abstract: A method for determining an etch profile is described. The method includes determining a masking layer profile. Loading information can be determined. The loading information indicates dependence of an etch rate for the masking layer profile on a quantity and pattern of material being etched. Flux information can be determined. The flux information indicates dependence of the etch rate on an intensity and a spread angle of radiation incident on the masking layer profile. Re-deposition information can be determined. The re-deposition information indicates dependence of the etch rate on an amount of material removed from the masking layer profile that is re-deposited back on the masking layer profile. An output etch profile for the layer of the wafer is determined based on the loading information, the flux information, and/or the re-deposition information.

公开(公告)号：US20210247701A1

公开(公告)日：2021-08-12

申请号：US17053255

申请日：2019-05-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Danying LI ,  Chi-Hsiang FAN ,  Adbalmohsen ELMALK ,  Youping ZHANG ,  Jay Jianhui CHEN ,  Kui-Jun HUANG

IPC: G03F7/20

Abstract: A method for determining a stack configuration for a substrate subjected to a patterning process. The method includes obtaining (i) measurement data of a stack configuration with location information on a printed substrate, (ii) a substrate model configured to predict a stack characteristic based on a location of the substrate, and (iii) a stack map including a plurality of stack configurations based on the substrate model. The method iteratively determines values of model parameters of the substrate model based on a fitting between the measurement data and the plurality of stack configurations of the stack map, and predicts an optimum stack configuration at a particular location based on the substrate model using the values of the model parameters.

公开(公告)号：US20190204750A1

公开(公告)日：2019-07-04

申请号：US16325767

申请日：2017-08-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Daimian WANG ,  Shengrui ZHANG ,  Chi-Hsiang FAN

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/705 ,  G03F7/70508 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7046

Abstract: A method including performing a first simulation for each of a plurality of different metrology target measurement recipes using a first model, selecting a first group of metrology target measurement recipes from the plurality of metrology target measurement recipes, the first group of metrology target measurement recipes satisfying a first rule, performing a second simulation for each of the metrology target measurement recipes from the first group using a second model, and selecting a second group of metrology target measurement recipes from the first group, the second group of metrology target measurement recipes satisfying a second rule, the first model being less accurate or faster than the second model and/or the first rule being less restrictive than the second rule.