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公开(公告)号：US20190025705A1
公开(公告)日：2019-01-24
申请号：US16067303
申请日：2016-12-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Hans VAN DER LAAN , Wim Tjibbo TEL , Marinus JOCHEMSEN , Stefan HUNSCHE
Abstract: Provided is a process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.
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公开(公告)号：US20210216017A1
公开(公告)日：2021-07-15
申请号：US17214456
申请日：2021-03-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Hans VAN DER LAAN , Wim Tjibbo Tel , Marinus Jochemsen , Stefan Hunsche
IPC: G03F7/20 , G06F30/398 , H01L21/66
Abstract: A process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.
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公开(公告)号：US20230176491A1
公开(公告)日：2023-06-08
申请号：US17923913
申请日：2021-04-21
Applicant: ASML Netherlands B.V.
Inventor： Olger Victor ZWIER , Maurits VAN DER SCHAAR , Hilko Dirk BOS , Hans VAN DER LAAN , S.M. Masudur Rahman AL ARIF , Henricus Wilhelmus Maria Van Buel , Armand Eugene Albert KOOLEN , Victor CALADO , Kaustuve BHATTACHARYYA , Jin LIAN , Sebastianus Adrianus GOORDEN , Hui Quan LIM
IPC: G03F7/20
CPC classification number: G03F7/70641 , G03F7/70558 , G03F7/70633 , G03F7/70625
Abstract: Disclosed is a substrate and associated patterning device. The substrate comprises at least one target arrangement suitable for metrology of a lithographic process, the target arrangement comprising at least one pair of similar target regions which are arranged such that the target arrangement is, or at least the target regions for measurement in a single direction together are, centrosymmetric. A metrology method is also disclosed for measuring the substrate. A metrology method is also disclosed comprising which comprises measuring such a target arrangement and determining a value for a parameter of interest from the scattered radiation, while correcting for distortion of the metrology apparatus used.
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Patent Agency Ranking
公开(公告)号：US20190171116A1
公开(公告)日：2019-06-06
申请号：US16323849
申请日：2017-07-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Hans VAN DER LAAN , Mir Homayoun SHAHRJERDY
IPC: G03F7/20
CPC classification number: G03F7/70675 , G03F7/705 , G03F7/70625
Abstract: A method including computing, in accordance with one or more parameters of a substrate measurement recipe, measurement with a latent image of a target and measurement with a post- development image corresponding to the latent image, to evaluate a characteristic determined from the computed measurement with the latent image of the target and determined from the computed measurement with the post-development image corresponding to the latent image; and adjusting the one or more parameters of the substrate measurement recipe and re-performing the computing, until a certain termination condition is satisfied with respect to the characteristic,
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5.发明申请Method of Metrology, Inspection Apparatus, Lithographic System and Device Manufacturing Method 有权计量，检验仪器，平版印刷系统和器件制造方法公开(公告)号：US20160370710A1
公开(公告)日：2016-12-22
申请号：US15186031
申请日：2016-06-17
Applicant: ASML Netherlands B.V.
Inventor： Peter Hanzen WARDENIER , Frank STAALS , Jean-Pierre Agnes Henricus Mar VAESSEN , Hans VAN DER LAAN
CPC classification number: G03F7/70591 , G01B11/03 , G03F7/70616 , G03F7/70625 , G03F7/70633
Abstract: Disclosed is a method of determining a correction for measured values of radiation diffracted from a target comprising a plurality of periodic structures, subsequent to measurement of the target using measurement radiation defining a measurement field. The correction acts to correct for measurement field location dependence in the measured values. The method comprises performing a first and second measurements of the periodic structures; and determining a correction from said first measurement and said second measurement. The first measurement is performed with said target being in a normal measurement location with respect to the measurement field. The second measurement is performed with the periodic structure in a shifted location with respect to the measurement field, said shifted location comprising the location of another of said periodic structures when said target is in said normal measurement location with respect to the measurement field.
Abstract translation: 公开了一种在使用定义测量场的测量辐射测量目标之后，确定从包括多个周期性结构的目标衍射的辐射的测量值的校正的方法。 该校正用于校正测量值中的测量场位置依赖性。 该方法包括执行周期性结构的第一和第二测量; 以及从所述第一测量和所述第二测量确定校正。 执行第一测量，其中所述目标相对于测量场处于正常测量位置。 相对于测量场，位移位置中的周期性结构执行第二测量，当所述目标相对于测量场在所述正常测量位置时，所述偏移位置包括另一个所述周期性结构的位置。
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公开(公告)号：US20250021018A1
公开(公告)日：2025-01-16
申请号：US18712176
申请日：2022-11-09
Applicant: ASML NETHERLANDS B.V.
Abstract: A method for improving imaging of a feature on a mask to a substrate during scanning operation of a lithographic apparatus. The method includes obtaining a dynamic pupil representing evolution of an angular distribution of radiation exposing a mask during a scanning operation of a lithographic apparatus and determining a variation of shift of a feature at a substrate during the scanning operation due to interaction of the dynamic pupil with the mask. The method includes configuring a mask parameter and/or or a control parameter of the lithographic apparatus to reduce the variation of shift of the feature.
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公开(公告)号：US20230333481A1
公开(公告)日：2023-10-19
申请号：US18207732
申请日：2023-06-09
Applicant: ASML NETHERLANDS B.V.
Inventor： Hans VAN DER LAAN , Wim Tjibbo TEL , Marinus JOCHEMSEN , Stefan HUNSCHE
IPC: G03F7/20 , G06F30/398 , H01L21/66
CPC classification number: G03F7/705 , G03F7/70616 , G06F30/398 , G03F7/70608 , G03F7/70625 , G03F7/7065 , H01L22/20 , H01L22/12
Abstract: A process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.
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公开(公告)号：US20190250520A1
公开(公告)日：2019-08-15
申请号：US16393055
申请日：2019-04-24
Applicant: ASML Netherlands B.V.
Inventor： Adam Jan URBANCZYK , Hans VAN DER LAAN , Grzegorz GRZELA , Alberto DA COSTA ASSAFRAO , Chien-Hung TSENG , Jay Jianhui CHEN
Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus. The method comprises: obtaining measured target response sequence data relating to a measurement response of a target formed on a substrate by a lithographic process to measurement radiation comprising multiple measurement profiles, wherein the measured target response sequence data describes a variation of the measurement response of the target in response to variations of the measurement profiles; obtaining reference target response sequence data relating to a measurement response of the target as designed to the measurement radiation, wherein the reference target response sequence data describes an optimal measurement response of the target in response to designed measurement profiles without un-designed variation; comparing the measured target response sequence data and the reference target response sequence data; and determining values for variations in stack parameters of the target from the measured target response sequence data based on the comparison.
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