公开(公告)号：US20210208513A1

公开(公告)日：2021-07-08

申请号：US17207936

申请日：2021-03-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Narjes JAVAHERI ,  Mohammadreza HAJIAHMADI ,  Olger Victor ZWIER ,  Gonzalo Roberto SANGUINETTI

IPC: G03F7/20 ,  G01M11/02 ,  G01M11/00

Abstract: A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.

公开(公告)号：US20210255553A1

公开(公告)日：2021-08-19

申请号：US17306670

申请日：2021-05-03

Applicant: ASML Netherlands B.V.

Inventor： Zili ZHOU ,  Nitesh PANDEY ,  Olger Victor ZWIER ,  Patrick WARNAAR ,  Maurits VAN DER SCHAAR ,  Elliott Gerard MC NAMARA ,  Arie Jeffrey DEN BOEF ,  Paul Christiaan HINNEN ,  Murat BOZKURT ,  Joost Jeroen OTTENS ,  Kaustuve BHATTACHARYYA ,  Michael KUBIS

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  G03F9/00

Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shifht (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.

公开(公告)号：US20230176491A1

公开(公告)日：2023-06-08

申请号：US17923913

申请日：2021-04-21

Applicant: ASML Netherlands B.V.

Inventor： Olger Victor ZWIER ,  Maurits VAN DER SCHAAR ,  Hilko Dirk BOS ,  Hans VAN DER LAAN ,  S.M. Masudur Rahman AL ARIF ,  Henricus Wilhelmus Maria Van Buel ,  Armand Eugene Albert KOOLEN ,  Victor CALADO ,  Kaustuve BHATTACHARYYA ,  Jin LIAN ,  Sebastianus Adrianus GOORDEN ,  Hui Quan LIM

IPC: G03F7/20

CPC classification number: G03F7/70641 ,  G03F7/70558 ,  G03F7/70633 ,  G03F7/70625

Abstract: Disclosed is a substrate and associated patterning device. The substrate comprises at least one target arrangement suitable for metrology of a lithographic process, the target arrangement comprising at least one pair of similar target regions which are arranged such that the target arrangement is, or at least the target regions for measurement in a single direction together are, centrosymmetric. A metrology method is also disclosed for measuring the substrate. A metrology method is also disclosed comprising which comprises measuring such a target arrangement and determining a value for a parameter of interest from the scattered radiation, while correcting for distortion of the metrology apparatus used.

公开(公告)号：US20220260929A1

公开(公告)日：2022-08-18

申请号：US17628668

申请日：2020-07-06

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： Nikhil MEHTA ,  Maurits VAN DER SCHAAR ,  Markus Gerardus Martinus Maria VAN KRAAIJ ,  Hugo Augustinus Joseph CRAMER ,  Olger Victor ZWIER ,  Jeroen COTTAAR ,  Patrick WARNAAR

IPC: G03F7/20 ,  G03F1/84 ,  G01N21/956

Abstract: A patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device includes target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The patterning device includes product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that the at least one target has at least one boundary which is neither parallel nor perpendicular with respect to the product structures on the substrate.

公开(公告)号：US20220035255A1

公开(公告)日：2022-02-03

申请号：US17299531

申请日：2019-12-04

Applicant: ASML Netherlands B.V.

Inventor： Maurits VAN DER SCHAAR ,  Olger Victor ZWIER ,  Patrick WARNAAR

IPC: G03F7/20 ,  G01N21/47

Abstract: A target for determining a performance parameter of a lithographic process, the target comprising a first sub-target formed by at least two overlapping gratings, wherein the underlying grating of the first sub-target has a first pitch and the top lying grating of the first sub-target has a second pitch, at least a second sub-target formed by at least two overlapping gratings, wherein the underlying grating of the second sub-target has a third pitch and the top lying grating of the second sub-target has a fourth pitch.

公开(公告)号：US20190219931A1

公开(公告)日：2019-07-18

申请号：US16246004

申请日：2019-01-11

Applicant: ASML Netherlands B.V.

Inventor： Olger Victor ZWIER

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70633 ,  G03F7/70158 ,  G03F7/70625 ,  G03F7/7065 ,  G03F7/70683 ,  G03F9/7003 ,  G03F9/7049

Abstract: Disclosed is a method of measuring a target, and a metrology apparatus. In one arrangement the target comprises a layered structure. The layered structure has a first target structure in a first layer and a second target structure in a second layer. The method comprises illuminating the target with measurement radiation using an illumination profile in the illumination pupil (u) that is offset from an imaginary line (IL) in the illumination pupil passing through the optical axis, to allow propagation to a detection region of the detection pupil of an allowed order (v2, v4) of a predetermined diffraction order while limiting propagation to the detection region of an equal and opposite order (v1′, v3′) of that predetermined diffraction order. Scattered radiation of plural double-diffracted allowed diffraction orders (w2, w4) is detected. A characteristic of the lithographic process is calculated using the detected scattered radiation of the predetermined diffraction orders.

公开(公告)号：US20230236515A1

公开(公告)日：2023-07-27

申请号：US18001255

申请日：2021-06-08

Applicant: ASML Netherlands B.V.

Inventor： Maurits VAN DER SCHAAR ,  Patrick WARNAAR ,  Franciscus Godefridus Casper BIJNEN ,  Olger Victor ZWIER

IPC: G03F7/00

CPC classification number: G03F7/70683 ,  G03F7/70633

Abstract: Disclosed is target arrangement comprising a first target region having at least a first pitch and at least a second pitch a second target region having at least a third pitch, wherein a portion of the first target region having a second pitch overlaps with a portion of the second target region.

公开(公告)号：US20220075276A1

公开(公告)日：2022-03-10

申请号：US17419648

申请日：2019-12-24

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus MATHIJSSEN ,  Marc Johannes NOOT ,  Kaustuve BHATTACHARYYA ,  Arie Jeffrey DEN BOEF ,  Grzegorz GRZELA ,  Timothy Dugan DAVIS ,  Olger Victor ZWIER ,  Ralph Timtheus HUIJGEN ,  Peter David ENGBLOM ,  Jan-Willem GEMMINK

IPC: G03F7/20 ,  G06T7/00 ,  G01N21/47

Abstract: A method provides the steps of receiving an image from a metrology tool, determining individual units of said image and discriminating the units which provide accurate metrology values. The images are obtained by measuring the metrology target at multiple wavelengths. The discrimination between the units, when these units are pixels in said image, is based on calculating a degree of similarity between said units.

公开(公告)号：US20180321597A1

公开(公告)日：2018-11-08

申请号：US15964643

申请日：2018-04-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Narjes JAVAHERI ,  Mohammadreza HAJIAHMADI ,  Olger Victor ZWIER ,  Gonzalo Roberto SANGUINETTI

IPC: G03F7/20 ,  G01M11/00

CPC classification number: G03F7/70625 ,  G01M11/00 ,  G03F7/705 ,  G03F7/70633

Abstract: A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.