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公开(公告)号：US20240012337A1
公开(公告)日：2024-01-11
申请号：US18229984
申请日：2023-08-03
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Mark John MASLOW , Koenraad VAN INGEN SCHENAU , Patrick WARNAAR , Abraham SLACHTER , Roy ANUNCIADO , Simon Hendrik Celine VAN GORP , Frank STAALS , Marinus JOCHEMSEN
CPC classification number: G03F7/70625 , G06T7/0004 , H01L22/20 , G06F30/20 , H01L21/00
Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.
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公开(公告)号：US20230004096A1
公开(公告)日：2023-01-05
申请号：US17780960
申请日：2020-09-28
Applicant: ASML Netherlands B.V.
Inventor： Scott Anderson MIDDLEBROOKS , Patrick WARNAAR , Patrick Philipp HELFENSTEIN , Alexander Prasetya KONIJNENBERG , Maxim PISARENCO , Markus Gerardus Martinus Maria VAN KRAAIJ
Abstract: A method and system for predicting complex electric field images with a parameterized model are described. A latent space representation of a complex electric field image is determined based on dimensional data in a latent space of the parameterized model for a given input to the parameterized model. The given input may be a measured amplitude (e.g., intensity) associated with the complex electric field image. The complex electric field image is predicted based on the latent space representation of the complex electric field image. The predicted complex electric field image includes an amplitude and a phase. The parameterized model comprises encoder-decoder architecture. In some embodiments, determining the latent space representation of the electric field image comprises minimizing a function constrained by a set of electric field images that could be predicted by the parameterized model based on the dimensional data in the latent space and the given input.
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公开(公告)号：US20220035255A1
公开(公告)日：2022-02-03
申请号：US17299531
申请日：2019-12-04
Applicant: ASML Netherlands B.V.
Inventor： Maurits VAN DER SCHAAR , Olger Victor ZWIER , Patrick WARNAAR
Abstract: A target for determining a performance parameter of a lithographic process, the target comprising a first sub-target formed by at least two overlapping gratings, wherein the underlying grating of the first sub-target has a first pitch and the top lying grating of the first sub-target has a second pitch, at least a second sub-target formed by at least two overlapping gratings, wherein the underlying grating of the second sub-target has a third pitch and the top lying grating of the second sub-target has a fourth pitch.
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4.发明申请公开(公告)号：US20190094712A1
公开(公告)日：2019-03-28
申请号：US16185062
申请日：2018-11-09
Applicant: ASML Netherlands B.V.
Inventor： Hendrik Jan Hidde SMILDE , Bastiaan Onne FAGGINGER AUER , Davit HARUTYUNYAN , Patrick WARNAAR
CPC classification number: G03F7/70625 , G01B9/04 , G01B2210/56 , G01N2021/8822 , G03F7/70633 , G03F7/70641 , G03F9/7092
Abstract: In a dark-field metrology method using a small target, a characteristic of an image of the target, obtained using a single diffraction order, is determined by fitting a combination fit function to the measured image. The combination fit function includes terms selected to represent aspects of the physical sensor and the target. Some coefficients of the combination fit function are determined based on parameters of the measurement process and/or target. In an embodiment the combination fit function includes jinc functions representing the point spread function of a pupil stop in the imaging system.
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公开(公告)号：US20180364590A1
公开(公告)日：2018-12-20
申请号：US16061236
申请日：2016-11-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Maurits VAN DER SCHAAR , Patrick WARNAAR , Youping ZHANG , Arie Jeffrey DEN BOEF , Feng XIAO , Martin EBERT
Abstract: A method includes projecting an illumination beam of radiation onto a metrology target on a substrate, detecting radiation reflected from the metrology target on the substrate, and determining a characteristic of a feature on the substrate based on the detected radiation, wherein a polarization state of the detected radiation is controllably selected to optimize a quality of the detected radiation.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20170248852A1
公开(公告)日：2017-08-31
申请号：US15438364
申请日：2017-02-21
Applicant: ASML Netherlands B.V.
Inventor： Patrick WARNAAR , Simon Philip Spencer HASTINGS , Alberto DA COSTA ASSAFRAO , Lukasz Jerzy MACHT
IPC: G03F7/20
Abstract: An inspection apparatus (140) measures asymmetry or other property of target structures (T) formed by a lithographic process on a substrate. For a given set of illumination conditions, accuracy of said measurement is influenced strongly by process variations across the substrate and/or between substrates. The apparatus is arranged to collect radiation scattered by a plurality of structures under two or more variants of said illumination conditions (p1−, p1, p1+; λ1−, λ1, λ1+). A processing system (PU) is arranged to derive the measurement of said property using radiation collected under a different selection or combination of said variants for different ones of said structures. The variants may be for example in wavelength, or in angular distribution, or in any characteristic of the illumination conditions. Selection and/or combination of variants is made with reference to a signal quality (302, Q, A) observed in the different variants.
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7.发明公开公开(公告)号：US20240319620A1
公开(公告)日：2024-09-26
申请号：US18650790
申请日：2024-04-30
Applicant: ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus TINNEMANS , Arie Jeffrey DEN BOEF , Armand Eugene Albert KOOLEN , Nitesh PANDEY , Vasco Tomas TENNER , Willem Marie Julia Marcel COENE , Patrick WARNAAR
CPC classification number: G03F7/7085 , G01B11/02 , G01B11/0625 , G01N21/4788 , G01N21/9501 , G03F7/70158 , G03F7/705 , G03F7/70625 , G03F7/70633 , G03F9/7088 , G01B2210/56
Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.
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公开(公告)号：US20210255553A1
公开(公告)日：2021-08-19
申请号：US17306670
申请日：2021-05-03
Applicant: ASML Netherlands B.V.
Inventor： Zili ZHOU , Nitesh PANDEY , Olger Victor ZWIER , Patrick WARNAAR , Maurits VAN DER SCHAAR , Elliott Gerard MC NAMARA , Arie Jeffrey DEN BOEF , Paul Christiaan HINNEN , Murat BOZKURT , Joost Jeroen OTTENS , Kaustuve BHATTACHARYYA , Michael KUBIS
IPC: G03F7/20 , G01N21/47 , G01N21/95 , G01N21/956 , G03F9/00
Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shifht (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.
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9.发明申请公开(公告)号：US20200379359A1
公开(公告)日：2020-12-03
申请号：US16988766
申请日：2020-08-10
Applicant: ASML Netherlands B.V.
Inventor： Hendrik Jan Hidde SMILDE , Bastiaan Onne FAGGINGER AUER , Davit HARUTYUNYAN , Patrick WARNAAR
Abstract: In a dark-field metrology method using a small target, a characteristic of an image of the target, obtained using a single diffraction order, is determined by fitting a combination fit function to the measured image. The combination fit function includes terms selected to represent aspects of the physical sensor and the target. Some coefficients of the combination fit function are determined based on parameters of the measurement process and/or target. In an embodiment the combination fit function includes jinc functions representing the point spread function of a pupil stop in the imaging system.
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10.发明申请公开(公告)号：US20200064744A1
公开(公告)日：2020-02-27
申请号：US16669317
申请日：2019-10-30
Applicant: ASML Netherlands B.V.
Inventor： Patrick WARNAAR , Simon Philip Spencer Hastings , Alberto Da Costa Assafrao , Lukasz Jerzy MACHT
IPC: G03F7/20
Abstract: An inspection apparatus (140) measures asymmetry or other property of target structures (T) formed by a lithographic process on a substrate. For a given set of illumination conditions, accuracy of said measurement is influenced strongly by process variations across the substrate and/or between substrates. The apparatus is arranged to collect radiation scattered by a plurality of structures under two or more variants of said illumination conditions (p1−, p1, p1+; λ1−, λ1, λ1+). A processing system (PU) is arranged to derive the measurement of said property using radiation collected under a different selection or combination of said variants for different ones of said structures. The variants may be for example in wavelength, or in angular distribution, or in any characteristic of the illumination conditions. Selection and/or combination of variants is made with reference to a signal quality (302, Q, A) observed in the different variants.
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